Patents by Inventor Masamitsu Inoue

Masamitsu Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Taxi system
    Patent number: 12002366
    Abstract: A taxi system includes a taxi vehicle that runs autonomously with a user on board and transports the user, and at least one auxiliary vehicle capable of registering the taxi vehicle as a linkage target and running by following the taxi vehicle as the linkage target with luggage loaded in the at least one auxiliary vehicle.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: June 4, 2024
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Makoto Kakuchi, Osamu Izumida, Shunji Inoue, Takumi Hamajima, Mitsushi Kintaka, Toshihiro Andou, Masamitsu Takahira
  • Transistor, transistor circuit, electrooptical device and electronic apparatus
    Patent number: 7960720
    Abstract: A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: June 14, 2011
    Assignees: Seiko Epson Corporation, Shinshu University, National University Corporation
    Inventors: Taketomi Kamikawa, Masamitsu Inoue
  • TRANSISTOR, TRANSISTOR CIRCUIT, ELECTROOPTICAL DEVICE AND ELECTRONIC APPARATUS
    Publication number: 20080173866
    Abstract: A transistor including a first gate electrode, a second gate electrode, a first gate insulating layer disposed between the first gate electrode and the second gate electrode, a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material, an organic semiconductor layer disposed between the first interlayer and the second gate electrode, a second gate insulating layer disposed between the organic semiconductor layer and the second gate electrode, and a source electrode and a drain electrode disposed between the first interlayer and the second gate insulating layer and injecting carriers into the organic semiconductor layer, wherein an ambipolar property is imparted to a part of the organic semiconductor layer that contacts with the first interlayer under an action of the first interlayer.
    Type: Application
    Filed: January 22, 2008
    Publication date: July 24, 2008
    Applicants: SEIKO EPSON CORPORATION, SHINSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
    Inventors: Taketomi KAMIKAWA, Masamitsu INOUE