Abstract: A method of manufacturing a semiconductor laser element includes: providing a nitride semiconductor structure with a target emission wavelength ?o, the nitride semiconductor structure having a light emission-side surface and a light reflection-side surface; forming an emission-side mirror on the light emission-side surface; and forming a reflection-side mirror on the light reflection-side surface. The semiconductor laser element has an actual wavelength ?a, which is 500 nm or more and is in a range of ?o±X nm (5?X?15). A reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a range of ?o±X nm.

Abstract: A method of manufacturing a semiconductor laser element includes: providing a nitride semiconductor structure with a target emission wavelength ?o, the nitride semiconductor structure having a light emission-side surface and a light reflection-side surface; forming an emission-side mirror on the light emission-side surface; and forming a reflection-side mirror on the light reflection-side surface. The semiconductor laser element has an actual wavelength ?a, which is 500 nm or more and is in a range of ?o±X nm (5?X?15). A reflectance of the emission-side mirror is lower than a reflectance of the reflection-side mirror and increases in accordance with an increase in wavelength in a range of ?o±X nm.

Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.

Abstract: A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film on at least one end surface of an optical resonator, in which the dielectric film includes a first dielectric layer and a second dielectric layer comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.

Abstract: A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser light; and end surface protective films (110) on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate (101) has a luminescent radiation region (112) that absorbs light emitted from the active layer (104) and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films (110) have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (112).

Abstract: A semiconductor laser device, which has a protective film at an end surface thereof, is adaptable to demands for higher outputs or shorter wavelengths. The semiconductor laser device according to the present invention includes a dielectric film on at least one end surface of an optical resonator, in which the dielectric film includes a first dielectric layer and a second dielectric layer comprised of the same elements and disposed in sequence from the end surface side of the semiconductor, the first dielectric layer including a layer made of a single crystal material and the second dielectric layer including a layer made of an amorphous material.

Abstract: A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.

Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.

Abstract: A nitride semiconductor laser device comprises a nitride semiconductor substrate (101); a nitride semiconductor lamination structure that has an n-type semiconductor layer (102), an active layer (104) and a p-type semiconductor layer (103) laminated on or above the nitride semiconductor substrate (101), and has a stripe-shaped waveguide region for laser light; and end surface protective films (110) on the both end surfaces substantially perpendicular to the waveguide region. In the nitride semiconductor laser device, the nitride semiconductor substrate (101) has a luminescent radiation region (112) that absorbs light emitted from the active layer (104) and emits luminescent radiation with a wavelength longer than the wavelength of the emitted light, and the end surface protective films (110) have a high reflectivity for the wavelength of the luminescent radiation from the luminescent radiation region (112).

Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.

Abstract: A laser device having at least a semiconductor laser element, a window allowing light emitted from the emission end face of the semiconductor laser element to pass therethrough, a photodetector detecting a portion of emitted light reflected from the window that is not being transmitted, and a stem whereon the semiconductor laser element and the photodetector are installed. The window is disposed vertically above the semiconductor laser element. The photodetector is placed at an angle with respect to a horizontal plane and is located contiguous with the main surface of the stem. The laser device is capable of maintaining a stable APC drive regardless of the deterioration of the semiconductor laser element that may occur from continuous oscillation for a long time.

Abstract: A semiconductor laser device have, on a substrate, a semiconductor layer including an active layer sandwiched between an n-type layer and a p-type layer, the semiconductor layer having a sonator face formed by etching and a projection projecting out in an emission direction relatively to the resonator face, wherein a protective film is formed to extend from the resonator face to an end face of the projection, and, an emission critical angle, which is the largest angle at which light emitted from the resonator face can be radiated without being blocked by the projection and the protective film formed on the projection, is larger than an emission half-angle of an emission distribution in a vertical direction of a laser beam emitted from the resonator face.

Abstract: To provide a semiconductor laser device which has no ripple and can afford better FFP having a pattern near a Gaussian distribution upon operation at the high output, the semiconductor laser comprising a laminate structure in which a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer different from the first conductive type are laminated in this order, the laminate structure having a waveguide region to guide a light and resonator planes for laser oscillation on both ends, characterized in that the laminate structure has a non-resonator plane on one end side and the non-resonator plane is covered with a shading layer.

Abstract: A laser device having at least a semiconductor laser element, a window allowing light emitted from the emission end face of the semiconductor laser element to pass therethrough, a photodetector detecting a portion of emitted light reflected from the window that is not being transmitted, and a stem whereon the semiconductor laser element and the photodetector are installed. The window is disposed vertically above the semiconductor laser element. The photodetector is placed at an angle with respect to a horizontal plane and is located contiguous with the main surface of the stem. The laser device is capable of maintaining a stable APC drive regardless of the deterioration of the semiconductor laser element that may occur from continuous oscillation for a long time.