Abstract: A three-terminal capacitor includes a main body having a cylindrical or substantially cylindrical shape extending in a first direction and including first and second inner electrodes alternately laminated together with dielectric layers interposed therebetween, a pair of first outer electrodes on two end surfaces of the main body in the first direction and electrically connected to the first inner electrodes, and a second outer electrode electrically connected to the second inner electrodes. The main body includes a projecting portion projecting in a direction perpendicular or substantially perpendicular to the first direction at a position between the pair of first outer electrodes. The second outer electrode is provided on one surface of the projecting portion viewable when viewed in the first direction.

Abstract: A tool system includes a portable tool, an image capturing unit, an orientation detection unit, and a processing unit. The tool includes a driving unit to be activated with power supplied from a power source. The image capturing unit is provided for the tool and generates a captured image. The orientation detection unit is provided for the tool and detects an orientation of the tool. The processing unit performs processing based on the captured image and the orientation.

Abstract: A gasoline engine exhaust gas purification catalyst for purifying exhaust gas emitted from a gasoline engine includes a precious metal, alumina, and a ceria/zirconia composite oxide supported on a three-dimensional structure, and has pores having a peak 1 at a pore size of not less than 0.001 ?m and not greater than 0.05 ?m, pores having a peak 2 at a pore size of not less than 2.5 ?m and not greater than 5.0 ?m, and pores having a peak 3 at a different pore size than the above pore sizes in a pore size distribution measured by mercury intrusion method, wherein the pore volume of the pores having the peak 3 is greater than 1.4% of the total pore volume. A production method for the catalyst, and an exhaust gas purification method using the catalyst are also described.

Abstract: The abnormal power supply voltage detection device has a function of accurately detecting the abnormal voltage in accordance with the characteristics of the semiconductor element for each semiconductor chip. Circuit group for operating the adjustment function has a function of preventing the influence of the power supply voltage of the logic system such as control in the semiconductor product malfunctions becomes abnormal. Furthermore, it has a function of detecting the abnormal voltage of the various power supplies in the semiconductor product. It also has a function to test the abnormal voltage detection function in the normal power supply voltage range during use of semiconductor products.

Abstract: Provided are a coating material and a coating method capable of making an antibacterial effect and an antiviral effect of a superficial layer of a coating target compatible for a long period of time. The coating material contains a coating agent in which inorganic polysilazane and an alkyl silicate condensate are dissolved in an inert solvent at a total concentration of 50 to 80 mass%, as a base agent, an inorganic antibacterial agent added to the base agent at a ratio of 0.1 to 5 mass%, and an inorganic antiviral agent added to the base agent at a ratio of 0.1 to 20 mass%.

Abstract: This ferrite sintered magnet comprises ferrite phases having a magnetoplumbite type crystal structure. This magnet comprises an element R, an element M, Fe, Co, B, Mn and Cr, the element R is at least one element selected from rare earth elements including Y, the element M is at least one element selected from the group consisting of Ca, Sr and Ba, with Ca being an essential element, and when an atomic composition of metallic elements is represented by R1-xMxFem-yCoy, x, y and m satisfy formulae: 0.2?x?0.8??(1) 0.1?y?0.65??(2) 3?m<14??(3). Additionally, a content of B is 0.1 to 0.4% by mass in terms of B2O3, a content of Mn is 0.15 to 1.02% by mass in terms of MnO, and a content of Cr is 0.02 to 2.01% by mass in terms of Cr2O3.

Abstract: A system for determining the health level of a user is provided. The health level determination system (520) includes a bioelectrical impedance acquisition section (53) that acquires bioelectrical impedances of a plurality of body parts of a user, a body composition estimation section (54) that estimates the body composition of a plurality of items of the user from the bioelectrical impedances of the plurality of body parts, and a body composition estimation section (54) that estimates the body composition of a plurality of items of the user based on the body composition of the plurality of items, at least partially, indirectly, or directly. The body composition estimation section (54) estimates the plurality of body compositions of the user from the bioelectrical impedances of the plurality of body parts.

Abstract: To provide a ferrite sintered magnet having a high residual magnetic flux density (Br), a high coercive force (HcJ), a good production stability, and also able to produce at a low cost. The ferrite sintered magnet includes a hexagonal M-type ferrite including A, R, Fe, and Co in an atomic ratio of A1-xRx(Fe12-yCoy)zO19. A is at least one selected from Sr, Ba, and Pb. R is La only or La and at least one selected from rare earth elements. 0.14?x?0.22, 11.60?(12-y)z?11.99, and 0.13?yz?0.17 are satisfied. 0.30?Mc?0.63 is satisfied in which Mc is CaO content (mass %) converted from a content of Ca included in the ferrite sintered magnet.

Abstract: To provide a ferrite sintered magnet having a high residual magnetic flux density (Br) and a high coercive force (HcJ), and also able to produce at a low cost. The ferrite sintered magnet includes a hexagonal M-type ferrite including A, R, Fe, and Co in an atomic ratio of A1-xRx(Fe12-yCoy)zO19. A is at least one selected from Sr, Ba, and Pb. R is La only or La and at least one selected from rare earth elements. 0.13?x?0.23, 10.80?(12?y)z?12.10, and 0.13?yz?0.20 are satisfied.

Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. The ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains 0.005 to 0.9 mass % of B in terms of B2O3. The multiple-crystal grain boundaries 6b contain Si and Ca, and in a case where the molar ratio of Ca to Si in the multiple-crystal grain boundaries 6b is represented by (Ca/Si)G, the following formula is satisfied. 0.1<(Ca/Si)G<0.

Abstract: A ferrite sintered magnet comprises a plurality of main phase grains containing a ferrite having a hexagonal structure, wherein at least some of the main phase grains are core-shell structure grains each having a core and a shell covering the core; and wherein the minimum value of the content of La in the core is [La]c atom %; the minimum value of the content of Co in the core is [Co]c atom %; the maximum value of the content of La in the shell is [La]s atom %; the maximum value of the content of Co in the shell is [Co]s atom %; [La]c+[Co]c is 3.08 atom % or more and 4.44 atom % or less; and [La]s+[Co]s is 7.60 atom % or more and 9.89 atom % or less.

Abstract: A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet does not substantially comprise a rare earth element and Co, a content of B is 0.005 to 0.9% by mass in terms of B2O3, and a content of Zn is 0.01 to 1.2% by mass in terms of ZnO.

Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect to temperature and a substantially linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage unit 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. The ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains 0.005 to 0.9 mass % of B in terms of B2O3. The multiple-crystal grain boundaries 6b contain Si and Ca, and in a case where the molar ratio of Ca to Si in the multiple-crystal grain boundaries 6b is represented by (Ca/Si)G, the following formula is satisfied. 0.1<(Ca/Si)G<0.

Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature.

Abstract: A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet comprises La and Co, a content of B is 0.005 to 0.9% by mass in terms of B2O3, a content of Zn is 0.01 to 1.2% by mass in terms of ZnO, and the ferrite sintered magnet satisfies [La]/[Zn]?0.79 and [Co]/[Zn]?0.67 when an atomic concentration of La is represented by [La], an atomic concentration of Co is represented by [Co], and an atomic concentration of Zn is represented by [Zn].

Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B2O3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries 6b having a maximum length of 0.49 to 5 ?m per cross-sectional area of 76 ?m2 is N, N is 7 or less.

Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 having a hexagonal crystal structure, two-crystal grain boundaries 6a formed between two of the M-type ferrite crystal grains 4, and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. This ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains B in an amount of 0.005 to 0.9 mass % in terms of B2O3, the two-crystal grain boundaries 6a and the multiple-crystal grain boundaries 6b contain Si and Ca, and in a cross-section parallel to a c-axis of the ferrite sintered magnet, when the number of multiple-crystal grain boundaries having a maximum length of 0.088 or more and less than 0.49 ?m per cross-sectional area of 76 ?m2 is P, P is 8 or more.

Abstract: A component mounting device is configured to mount, on a substrate, an electronic component having a functional unit. The component mounting device includes a component supply mechanism, a recognition unit, a component mounting mechanism, and a holding position determination unit. The component supply mechanism supplies the electronic component. The recognition unit recognizes a position of the functional unit. The component mounting mechanism holds the electronic component supplied from the component supply mechanism and mounts the electronic component on the substrate. The holding position determination unit determines a holding position of the electronic component by the component mounting mechanism based on the position of the functional unit recognized by the recognition unit.

Abstract: The present invention provides a ferrite sintered magnet comprising ferrite crystal grains having a hexagonal structure, wherein the ferrite sintered magnet comprises metallic elements at an atomic ratio represented by formula (1). In formula (1), R is at least one element selected from the group consisting of Bi and rare-earth elements, and R comprises at least La. In formula (1), w, x, z and m satisfy formulae (2) to (5). The above-mentioned ferrite sintered magnet further has a coefficient of variation of a size of the crystal grains in a section parallel to a c axis of less than 45%. Ca1-w-xRwSrxFezCom??(1) 0.360?w?0.420??(2) 0.110?x?0.173??(3) 8.51?z?9.71??(4) 0.208?m?0.