Abstract: The sensor device includes: a converter body made of silicon in the shape of a rhombus in plan, the converter body having an opening in the shape of a hexagon in plan; a substrate for holding the converter body; a movable film formed on the opening; a converter electrode formed on the converter body; and a substrate electrode formed on the substrate, the substrate electrode being electrically connected with the converter electrode. The opening is placed so that four of the six sides of the hexagon extend along the four sides of the rhombus of the converter body.

Abstract: A semiconductor device includes: a semiconductor substrate having an imaging region in which a plurality of photoreceptors are arranged, and a peripheral circuit region arranged around the imaging region; a plurality of microlenses formed on the imaging region; a low-refractive-index film formed on the semiconductor substrate to cover the plurality of microlenses and part of the peripheral circuit region; and a transparent substrate formed on part of the low-refractive-index film above the imaging region. A through hole is formed in part of the low-refractive-index film above an amplifier circuit arranged in the peripheral circuit region.

Abstract: In a module with embedded electronic components, connection electrodes are formed on the component mounting surface of a substrate. The electrode portions of each of the electronic components are placed on the individual connection electrodes and connected in fixed relation thereto by using a solder. The electronic components are encapsulated in an encapsulating resin.

Abstract: A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.

Abstract: A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element. The gas encapsulated with the package has an oxygen concentration not less than 15% and less than 30% and has a dew-point not less than ?15° C. and not more than ?5° C.

Abstract: The electronic device includes: a heat sink including a front surface having a concave portion; a heat conductive component placed in the concave portion, in contact with the heat sink; a semiconductor element placed in the concave portion, in contact with the heat conductive component; a flexible base plate electrically connected to the semiconductor element and placed on the surface of the heat sink; and a chassis member having a front surface on which the heat sink is fixed so as to come in contact with the heat sink at the back surface opposite to the front surface.

Abstract: A solid-state image sensor includes a first image sensing device, a first flexible substrate connected to the first image sensing device, a second solid-state image sensing device, and a second flexible substrate connected to the second solid-state image sensing device. The solid-state image sensing devices are disposed adjacently to each other such that light receiving surfaces are perpendicular to each other. The second solid-state image sensing device directly receives incident light. However, the first solid-state image sensing device receives the incident light reflected by a mirror. Electronic components are mounted on the two flexible substrates. The first flexible substrate is bent at two bending positions to face the second flexible substrate and electrically connected thereto.

Abstract: A semiconductor-element mounting substrate is a substrate for mounting a semiconductor element, and includes a substrate body. The substrate body has a mounting surface, and the center portion of the mounting surface is provided with a die pattern. Through conductors are provided in a portion of the substrate body located outside the die pattern to penetrate the substrate body in the thicknesswise direction. First terminals and second terminals are connected to the through conductors, respectively. The first terminals each extend toward the outer edge of the mounting surface, and they are electrically connected to the semiconductor element. The second terminals are provided on a surface of the substrate body opposite to the mounting surface.

Abstract: An optical device includes an optical element, a transparent member arranged on the optical element, and a transparent resin adhesive for causing the transparent member to adhere and be fixed onto a circuit formation face of the optical element. The optical device includes a light detecting region having a plurality of micro lenses, a peripheral circuit region formed in the outer peripheral part of the light detecting region, and an electrode region formed at the outer peripheral part of the peripheral circuit region. A roughed region in a saw-toothed shape in section is formed in part of a face of the transparent member which adheres to the optical element, the part being overlapped with the outer peripheral part of the light detecting region as viewed in plan.

Abstract: The present invention provides a wiring board which may be warped only by a reduced amount when the wiring board is thin and has wiring patterns of different shapes on the opposite surfaces thereof and which enables a thin, small, and reliable semiconductor device to be implemented. The wiring board includes a planar resin base material 12, a first resin film 26 provided on the first surface of the resin base material 12 and shaped to expose the element connection terminals 14, and a second resin film 28 provided on the second surface of the resin base material and shaped to expose the external connection terminals 16, wherein the first resin film 26 and the second resin film 28 are different in at least one of a glass transition point, cure shrinkage, and a thermal expansion coefficient.

Abstract: A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.

Abstract: An optical device includes a base and an optical element chip and translucent member attached to the base. A wiring is buried in the base. One end of the wiring is an internal terminal portion. The other end of the wiring is an external terminal portion. A semiconductor chip incorporating peripheral circuits, etc., and a metal wire for connecting a pad electrode of the semiconductor chip and the wiring are buried in the base. The semiconductor chip incorporating peripheral circuits, etc., and the metal wire are buried together with the wiring in the base by molding, whereby the optical device and the semiconductor chip incorporating peripheral circuits, etc., are integrated into a single package.

Abstract: A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.

Abstract: A semiconductor device includes: a semiconductor substrate 1; a through electrode 7 extending through the semiconductor substrate 1; a diffusion layer 24 formed in a region of an upper portion of the semiconductor substrate 1 located on a side of the through electrode 7; and a diffusion layer 22 formed in an upper portion of the diffusion layer 24. A portion of the side surface of the through electrode 7 facing the diffusion layer 24 is curved, and a portion of the surface of the diffusion layer 24 facing the through electrode 7 is curved.

Abstract: A solid-state imaging-device includes a base, frame-shaped ribs provided on the base and forming an internal space, a plurality of wiring members for electrically leading the internal space of a housing formed by the base and the ribs to an external portion, an imaging element fixed to the base inside the internal space, a transparent plate fixed to an upper surface of the ribs, and connecting members electrically connecting electrodes of the imaging element to the wiring members, wherein a plurality of protrusions are provided in a region of the base that faces the imaging element, and the imaging element is fixed by adhesive to the base while being supported by the protrusions. The protrusions enable the imaging element to avoid distortion caused by following the surface of the base, thereby suppressing the effect on electrical properties of the imaging element.

Abstract: An optical unit includes: a first light emitting device configured to emit a first beam; and a second light emitting device configured to emit a second beam in a direction the same as a direction of the first beam where the second beam is different in wavelength from the first beam. An emission surface of the second light emitting device is arranged at a distance from an emission surface of the first light emitting device in an opposite direction to the direction of the first beam.

Abstract: A plurality of parallel rib prototypes are provided on a flat base plate. A plurality of semiconductor elements are placed in each trench between adjacent ones of the rib prototypes, and a transparent member is bonded to each of the semiconductor elements. Electrode pads of the semiconductor elements are wire bonded to connection electrodes. The trenches are then filled with an encapsulating resin. Thereafter, middle portions, in the longitudinal direction, of the rib prototypes are cut with a dicing saw, and adjacent ones of the semiconductor elements are separated from each other, thereby obtaining semiconductor devices.

Abstract: A flat pre-board plate including connection electrodes, internal interconnections, and external-connection portions is prepared. This pre-board plate is cut at portions each located between adjacent ones of the connection electrodes, thereby forming trenches. A plurality of semiconductor elements are placed in each of the trenches. Electrode pads and the connection electrodes are connected to each other by metal wires. Transparent lids are placed on, and bonded to, spacers to cover the semiconductor elements. Thereafter, two lines of the connection electrodes arranged between adjacent ones of the trenches are separated from each other. Subsequently, adjacent ones of the semiconductor elements are also separated from each other.

Abstract: A solid-state imaging device comprises a housing in which a base and ribs forming a rectangular frame are formed in one piece by a resin; a plurality of metal lead pieces embedded in the housing, each of which has an internal terminal portion facing an internal space of the housing and an external terminal portion exposed at an outer portion of the housing; an imaging element arranged on the base in the internal space of the housing; connecting members connecting electrodes of the imaging element to the internal terminal portions of the metal lead pieces; and a transparent plate fastened to an upper face of the ribs. The upper face of the ribs is provided with a lower step portion that is lowered along an external periphery, and the transparent plate is fastened to the upper face of the ribs by an adhesive filled at least into the lower step portion.

Abstract: An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.