Patents by Inventor Masanori Naitou

Masanori Naitou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the production of semiconductor devices
    Patent number: 5602060
    Abstract: Process for the production of semiconductor devices comprising the steps of applying a solution of the specified polycarbosilane in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350.degree. C. in an oxidizing atmosphere to thereby covert the polycarbosilane layer to a silicon oxide layer. The resulting silicon oxide layer has a planarized surface and has no cracking and accordingly is useful as a dielectric layer and a protective layer in the production of semiconductor devices having a high reliability.
    Type: Grant
    Filed: January 4, 1996
    Date of Patent: February 11, 1997
    Assignee: Fujitsu Limited
    Inventors: Michiko Kobayashi, Syun-ichi Fukuyama, Yoshihiro Nakata, Masanori Naitou, Hiroshi Kudo, Yoshiyuki Ohkura