Abstract: A lead-free brass material exhibiting excellent forgeability and dezincification resistance is provided. The brass material includes 61.0 to 63.0 wt % of Cu, 0.5 to 2.5 wt % of Bi, 1.5 to 3.0 wt % of Sn, 0.02 to 0.10 wt % of Sb, and 0.04 to 0.15 wt % of P, with the balance being substantially Zn. The brass material is a lead-free, free-cutting alloy which can be suitably applied to forging and which exhibits excellent mechanical properties and dezincification resistance without substantially subjecting the brass material to a heat treatment after forging.

Abstract: A copper alloy extruded material is provided by extruding a copper alloy powder solidified billet and old grain boundaries remain in it.

Abstract: The invention provides a lead-free brass material exhibiting excellent forgeability and dezincification resistance. The brass material includes 61.0 to 63.0 wt % of Cu, 0.5 to 2.5 wt % of Bi, 1.5 to 3.0 wt % of Sn, 0.02 to 0.10 wt % of Sb, and 0.04 to 0.15 wt % of P, with the balance being substantially Zn. The brass material is a lead-free free-cutting alloy which can be suitably applied to forging and exhibits excellent mechanical properties and dezincification resistance without substantially subjecting the brass material to a heat treatment after forging.

Abstract: An infrared detection film of which a dielectric constant is changed according to a temperature change is characterized in that the infrared detection film has a composition expressed by Ba(Ti1-xSnx)O3 (0<x<1) and change in the dielectric constant for temperature change of 1° C. is 2% or more. Furthermore, the Sn composition x is not less than 0.1 and not more than 0.2 and the thickness of the infrared detection film is 2 ?m or less. With a dielectric bolometer including the infrared detection film, a highly sensitive infrared detector or solid imaging device which is operable at room temperature can be achieved.

Abstract: A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a”, contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

Abstract: The present invention relates to a method for preparing a thin film of metal oxide containing one or more metal elements on a substrate. The method includes the steps of applying a sol-gel solution containing the one or more metal elements to a surface of the substrate, drying the sol-gel solution to prepare a dried gel film on the substrate, soaking the dried gel film on the substrate in an alkaline aqueous solution containing at least one kind of metal element among the one or more metal elements in a container, sealing the container, and performing hydrothermal treatment for the dried gel film on the substrate in the sealed container to prepare a thin film of metal oxide on the substrate.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: A top surface of a wafer is provided with an n-type source region, an n-type drain region, and an n-type semiconductor region. Dry etching using a plasma is performed with respect to an interlayer insulating film deposited on the wafer to form openings reaching the respective regions, followed by light etching for removing a damaged layer. In this case, exciting light is supplied intermittently to the n-type semiconductor region. The progression of the removal of the damaged layer and the stage of development of a newly damaged layer are sensed by monitoring the change rate of the intensity of reflected probe light in the presence and absence of the exciting light, resulting in the formation of a semiconductor device having low and equal contact resistance. In-line control using optical evaluation enables the implementation of semiconductor devices with excellent and consistent properties.

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a” contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a”, contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: A piezoelectric actuator, made of a substrate and a piezoelectric film layer resistant to erosion is provided. The area of the piezoelectric actuator can be enlarged, and has a flat top surface. The present invention further provides an ink jet printing head, a printer, a method for manufacturing a piezoelectric actuator, and a method for manufacturing an ink jet printing head. The piezoelectric actuator includes a piezoelectric film disposed between a lower electrode and an upper electrode. Columnar crystal grains of piezoelectric ceramic which compose the piezoelectric actuator are random-oriented in a film thickness direction, and have a mean diameter in the range of 100 nm to 15,000 nm. The method for manufacturing the actuator includes the step of forming precursor films, which are composed of metal and oxygen, over a lower electrode, providing a hydrothermal treatment by dipping the precursor films in an alkaline solution, which as 2 M[mol/l] or less, more preferably 0.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: A thermal type infrared sensing device has; a plurality of light-receiving electrodes for outputting a change of surface charge associated with a polarization that occurs in a dielectric when subjected to infrared radiation; and a plurality of compensation electrodes, corresponding one for one to plurality of light-receiving electrodes, for compensating the outputs of corresponding light-receiving electrodes, and wherein plurality of compensation electrodes are formed on a different substrate from a substrate on which plurality of light-receiving electrodes are formed.