Abstract: A semiconductor device includes a semiconductor chip, a bump contract, and encapsulating layer, an insulating layer, and a connection terminal.

Abstract: A semiconductor device includes a semiconductor chip, a bump contract, and encapsulating layer, an insulating layer, and a connection terminal.

Abstract: Various embodiments of the present disclosure include a non-volatile memory semiconductor device and a device that uses the same, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present disclosure, it is possible to provide a high-quality semiconductor device, in which downsizing and cost reduction can be realized.

Abstract: A camera module of the disclosure includes: an imaging unit that includes a plurality of pixels, acquires a first detection value in one of the pixels in a second term out of a first term, the second term, a third term, and a fourth term that are set in order, acquires a second detection value in the relevant one of the pixels in the fourth term, and obtains a pixel value of the relevant one of the pixels on the basis of a difference between the first and second detection values; a lens unit including a lens and an actuator that drives the lens; and a driver unit that generates a drive signal and drives the actuator using the drive signal, in which the drive signal makes a transition in each of the first and third terms.

Abstract: A camera module of the disclosure includes: an imaging unit that includes a plurality of pixels, acquires a first detection value in one of the pixels in a second term out of a first term, the second term, a third term, and a fourth term that are set in order, acquires a second detection value in the relevant one of the pixels in the fourth term, and obtains a pixel value of the relevant one of the pixels on the basis of a difference between the first and second detection values; a lens unit including a lens and an actuator that drives the lens; and a driver unit that generates a drive signal and drives the actuator using the drive signal, in which the drive signal makes a transition in each of the first and third terms.

Abstract: Various embodiments of the present invention include a semiconductor device and a fabrication method therefore, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefore, in which downsizing and cost reduction can be realized.

Abstract: An example method includes disposing a semiconductor element on a first surface of a substrate. The substrate includes multiple solder balls mounted on a second surface of the substrate that is opposite to the first surface. The semiconductor element includes a bottom surface adjacent to the first surface of the substrate, a top surface, and multiple side surfaces. The example method includes forming a first molding portion to entirely enclose the multiple side surfaces and the top surface of the semiconductor element. The example method includes removing a second molding portion from the first molding portion to expose all of the top surface of the semiconductor element, leaving a third molding portion entirely enclosing the multiple sides surfaces of the semiconductor element, and coupling the semiconductor element to the first surface of the substrate by forming electrical connection between the semiconductor element and a first of the multiple solder balls.

Abstract: Various embodiments of the present disclosure include a non-volatile memory semiconductor device and a device that uses the same, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present disclosure, it is possible to provide a high-quality semiconductor device, in which downsizing and cost reduction can be realized.

Abstract: A semiconductor device includes a semiconductor chip, a bump contact, and encapsulating layer, an insulating layer and a connection terminal.

Abstract: Various embodiments of the present invention include a semiconductor device and a fabrication method therefore, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefore, in which downsizing and cost reduction can be realized.

Abstract: A semiconductor device includes a semiconductor chip, a bump electrode, a molding portion, a redistribution layer and an outer connection electrode. The bump electrode is provided on an upper face of the semiconductor chip. The molding portion encapsulates an entire side face of the semiconductor chip and seals the bump electrode so that a part of the bump electrode is exposed. The redistribution layer is provided on an upper face of the molding portion and is electrically coupled to the semiconductor chip via the bump electrode. The outer connection electrode is provided on an upper face of the redistribution layer and is electrically coupled to the bump electrode via the redistribution layer.

Abstract: Various embodiments of the present invention include a method for making a semiconductor device the method including disposing a first semiconductor chip on a first surface of a first substrate, the first substrate comprising a second surface opposing the first surface, depositing a first resin above the first semiconductor chip, disposing a built-in semiconductor device on the first resin. The built-in semiconductor device including a second substrate, a second semiconductor chip disposed on the second substrate, and a second resin that seals the second semiconductor chip. The method including depositing a third resin above the built-in semiconductor device and the first resin and covering a side surface of the first substrate and not extending beyond the second surface of the first substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device fabrication method, in which downsizing and cost reduction can be realized.

Abstract: Methods and structures for stack type semiconductor packaging are disclosed. In one embodiment, a semiconductor device includes a semiconductor chip mounted onto a substrate, a first resin molding portion formed on the substrate for sealing the semiconductor chip, and a through metal mounted on the substrate so as to pierce the first resin molding portion around the semiconductor chip. The semiconductor device further comprises an upper metal electrically coupled with the through metal and mounted on the first resin molding portion to extend from the through metal toward the semiconductor chip along an upper surface of the first resin molding portion, where the through metal and the upper metal are formed into an integral structure.

Abstract: The present invention provides a semiconductor device with an improved yield ratio and reduced height and manufacturing cost; and a method of manufacturing the semiconductor device. According to an aspect of the present invention, there is provided a semiconductor device including a substrate, a semiconductor element that is flip-chip connected to the substrate, and a molding portion that seals the semiconductor element. The side surfaces of the semiconductor element are enclosed by the molding portion. An upper surface of the semiconductor element is not enclosed by the molding portion. Damage to the side surfaces of the semiconductor element caused by an external impact when the semiconductor device is stored is minimized, because the molding portion protects the side surfaces of the semiconductor element. Accordingly, the yield ratio of the semiconductor device is improved.

Abstract: A method of fabricating a semiconductor device includes the steps of providing a heat-resistant sheet on an interposer so as to cover electrode terminals provided on the interposer, and sealing a semiconductor chip on the interposer sandwiched between molds with a sealing material. The electrode terminals are covered by the heat-resistant resin for protection, and the semiconductor chip is then sealed with resin. It is thus possible to avoid the problem in which contaminations adhere to the electrode terminals. This makes it possible to prevent the occurrence of resin burrs on the interposer and contamination of the electrode pads and to improve the production yield.

Abstract: A semiconductor device 100 includes: a first semiconductor package 10; a first interposer 12 having an upper surface on which the first semiconductor package 10 is mounted; a first molding resin 14 that is provided on the upper surface of the first interposer 12 and seals the first semiconductor package 10; a second semiconductor package 20 mounted on an upper surface of the first molding resin 14; a second interposer 22 on which the second semiconductor package 20 is mounted by flip chip bonding; and a second molding resin 40 that is provided on the upper surface of the first interposer 12 and seals the first molding resin 14, the second semiconductor package 20, and the second interposer 22. The second semiconductor package 20 is mounted, with a surface thereof opposite to another surface mounted on the second interposer 22 faced down, on the upper surface of the first molding resin 14 via an adhesive 30.

Abstract: The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

Abstract: The present invention provides a semiconductor device with an improved yield ratio and reduced height and manufacturing cost; and a method of manufacturing the semiconductor device. According to an aspect of the present invention, there is provided a semiconductor device including a substrate, a semiconductor element that is flip-chip connected to the substrate, and a molding portion that seals the semiconductor element. The side surfaces of the semiconductor element are enclosed by the molding portion. An upper surface of the semiconductor element is not enclosed by the molding portion. Damage to the side surfaces of the semiconductor element caused by an external impact when the semiconductor device is stored is minimized, because the molding portion protects the side surfaces of the semiconductor element. Accordingly, the yield ratio of the semiconductor device is improved.

Abstract: A method of producing a carrier structure for fabricating a stacked-type semiconductor device includes laminating thin plates for a lower carrier associated with an upper carrier. The method includes forming openings in the thin plates by etching or electric discharge machining. The lower carrier includes a magnet that is buried therein and the magnet maintains contact between the lower carrier and the upper carrier. A thin plate of the laminated thin plates is provided on each opposing surface of the magnet. The lower carrier further includes multiple magnets arranged around a periphery of the lower carrier and through a center region of the lower carrier that is between magnets on the periphery.

Abstract: Various embodiments of the present invention include a semiconductor device and a fabrication method therefore, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefore, in which downsizing and cost reduction can be realized.