Abstract: The working fluid composition for a refrigerating machine of the present invention comprises a mixed refrigerant comprising a hydrofluoroethane represented by the following formula (A), difluoromethane and tetrafluoropropene, and a refrigerating machine oil comprising at least one selected from a polyol ester, a polyvinyl ether and a polyalkylene glycol compound as a base oil, wherein a carbon/oxygen molar ratio of the base oil is 2.5 or more and 5.8 or less. C2HnF6-n??(A) [n represents 1 or 2.

Abstract: A silicon wafer cleaning agent includes at least a water-based cleaning liquid, and a water-repellent cleaning liquid for providing water-repellent to an uneven pattern at least at recessed portions during a cleaning process. The water-repellent cleaning liquid is a liquid composed of a water-repellent compound containing a reactive moiety which is chemically bondable to Si in the silicon wafer, and a hydrophobic group, or is a liquid wherein 0.1 mass % or more of the water-repellent compound relative to the total quantity of 100 mass % of the water-repellent cleaning liquid and an organic solvent are mixed and contained therein. A cleaning process wherein a pattern collapse is easily induced can be improved by using the cleaning agent.

Abstract: The working fluid composition for a refrigerating machine of the present invention comprises a refrigerant comprising a first refrigerant component and a second refrigerant component, and having a global warming potential (GWP) of 500 or less, wherein the first refrigerant component is at least one selected from difluoromethane and tetrafluoropropene, and the second refrigerant component is at least one selected from carbon dioxide and a hydrocarbon having 3 to 4 carbon atoms; and a refrigerating machine oil comprising at least one selected from a polyol ester, a polyvinyl ether and a polyalkylene glycol compound as a base oil, wherein a carbon/oxygen molar ratio of the base oil is 2.5 or more and 5.8 or less.

Abstract: The working fluid composition for a refrigerating machine of the present invention comprises a refrigerant comprising monofluoroethane, and a refrigerating machine oil comprising at least one selected from a polyol ester, a polyvinyl ether and a polyalkylene glycol compound as a base oil, wherein a carbon/oxygen molar ratio of the base oil is 2.5 or more and 5.8 or less.

Abstract: A refrigerating machine oil composition comprising at least one ester additive selected from tetraesters of pentaerythritol and one selected from fatty acids having 5 to 18 carbon atoms and hexaesters of dipentaerythritol and one selected from fatty acids having 5 to 18 carbon atoms, and a base oil that is an ester other than the ester additive, in which the content of the ester additive is 2 to 20 mass % based on the total amount of the refrigerating machine oil composition, and the kinematic viscosity of the refrigerating machine oil composition at 40° C. is 3 to 500 mm2/s.

Abstract: The working fluid composition for a refrigerating machine of the present invention comprises: a refrigerating machine oil comprising a mineral oil and an alkylbenzene in a mass ratio, the mineral oil/the alkylbenzene, of 85/15 to 15/85, wherein the mineral oil has a % CN by n-d-M ring analysis of 20 to 60, a pour point of ?15° C. or less and a kinematic viscosity at 40° C. of 1.5 to 15 mm2/s; and a hydrocarbon refrigerant having 2 to 4 carbon atoms, wherein the refrigerating machine oil having a kinematic viscosity at 40° C. of 2 to 12 mm2/s and a flash point of 120° C. or more.

Abstract: A working fluid composition for a refrigerating machine of the present invention comprises: a refrigerating machine oil comprising a complex ester as a base oil; and a hydrocarbon refrigerant having 2 to 4 carbon atoms, the complex ester being obtainable by further esterifying, with at least one selected from a monohydric alcohol having 1 to 20 carbon atoms and a fatty acid having 2 to 20 carbon atoms, an ester intermediate obtained by reacting a neopentyl polyol with a dibasic acid, and having an acid value of 0.5 mgKOH/g or less, the refrigerating machine oil having a kinematic viscosity at 100° C. of 2 to 50 mm2/s.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

Abstract: A working fluid composition for a refrigerating machine of the invention comprises a refrigerant comprising difluoromethane and an unsaturated fluorinated hydrocarbon wherein a mass of the difluoromethane/the unsaturated fluorinated hydrocarbon is 95/5 to 10/90, and a refrigerating machine oil comprising at least one base oil selected from among polyol esters with a carbon/oxygen molar ratio of 3.2 to 5.8 and polyvinyl ethers with a carbon/oxygen molar ratio of 3.2 to 5.8.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film. The liquid chemical contains an agent for forming a water-repellent protecting film, and a solvent. The agent is for provided to form a water-repellent protecting film on a wafer after a cleaning step for the wafer and before a drying step for the wafer, the wafer having at its surface an uneven pattern and containing at least one kind element of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water-repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized in that the agent for forming a water-repellent protecting film is a compound represented by the following general formula [1].

Abstract: The present invention provides a pressure feed container capable of ensuring the cleanliness of a liquid such as a protective film-forming liquid chemical or a protective film-forming liquid chemical kit for preparing the liquid chemical even after long-term storage, and also capable of suppressing electrostatic charge in the liquid. The present invention provides a pressure feed container configured to store a protective film-forming liquid chemical or a protective film-forming liquid chemical kit that is mixed into the protective film-forming liquid chemical, and to transfer a liquid upon application of pressure to the inside of the container, the protective film-forming liquid chemical being for forming a water-repellent protective film on at least surfaces of recessed portions of an uneven pattern formed on a surface of a wafer containing a silicon element at least at a part of the uneven pattern.

Abstract: A method for preparing a liquid chemical for forming a water-repellant protective film, the liquid chemical having a solvent and an agent for forming a water-repellant protective film, the liquid chemical being for forming a water-repellent protective film at least on surfaces of recessed portions of an uneven pattern of a wafer having the uneven pattern at its surface, the method including: a first refinement step for eliminating the elements (metal impurities) Na, Mg, K, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn and Ag in a solvent by distilling the solvent or by a particle-eliminating membrane and an ion exchange resin membrane; a mixing step for mixing the solvent after the first refinement step and an agent for forming a water-repellant protective film; and a second refinement step for eliminating particles in a liquid chemical after the mixing step by a particle-eliminating membrane.

Abstract: A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

Abstract: Disclosed herein is a method for preparing a liquid chemical for forming a water-repellent protective film, the liquid chemical being for forming the water-repellent protective film at the time of cleaning a wafer having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern at least on surfaces of recessed portions of the uneven pattern, the liquid chemical containing a nonaqueous organic solvent, a silylation agent, and an acid or a base. The method includes (i) adjusting a water content of the nonaqueous organic solvent to 200 mass ppm or less by dehydration; and (ii) mixing the nonaqueous organic solvent, the silylation agent, and the acid or the base after the adjusting step.

Abstract: The refrigerating machine oil of the invention includes an ester of a polyhydric alcohol and a fatty acid, wherein the molar ratio of C4-C6 fatty acid and C7-C9 branched fatty acid in the fatty acid is between 15:85 and 90:10, the C4-C6 fatty acid includes 2-methylpropanoic acid, and the ratio of the total C4-C6 fatty acid and C7-C9 branched fatty acid in the total fatty acids composing the ester is at least 20 mol %. The working fluid composition for a refrigerating machine according to the invention comprises the refrigerating machine oil, a difluoromethane refrigerant and/or an unsaturated fluorinated hydrocarbon refrigerant.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film at least on surfaces of recessed portions of a metal-based wafer, the liquid chemical for forming a water repellent protective film being characterized by comprising a surfactant which has an HLB value of 0.001-10 according to Griffin's method and includes a hydrophobic moiety having a C6-C18 hydrocarbon group and water, and characterized in that the concentration of the surfactant in the liquid chemical is not smaller than 0.00001 mass % and not larger than the saturated concentration relative to 100 mass % of the total amount of the liquid chemical. This liquid chemical can improve a cleaning step which tends to induce a metal-based wafer to cause a pattern collapse.

Abstract: The present invention relates to a method for cleaning wafers while preventing pattern collapse of the wafers in semiconductor device fabrication, the wafer having at its surface an uneven pattern and containing silicon element at least on surfaces of recessed portions. Provided is: a liquid chemical for forming a protective film which allows efficient cleaning; and a method for cleaning wafers, using the liquid chemical. A liquid chemical for forming a water repellent protective film is provided for forming a protective film on a wafer (having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern), the protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains a dialkylsilyl compound represented by the formula [1] and does not contain an acid and a base.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4?a?b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4?g?h?w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

Abstract: An information processing apparatus, capable of communicating with a plurality of printing apparatuses, for inputting insertion data to a data area of document data and sending output data processible by each printing apparatus, comprises: a classification unit adapted to classify a plurality of print data to be used for printing into a plurality of storage areas based on contents of insertion data to be inserted into document data; an output unit adapted to output output data based on the print data to an output destination associated with the storage area of the print data classified by the classification unit.

Abstract: A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.