Abstract: An imaging apparatus includes a controller configured to control a motor and an image sensor. The controller rotates the motor in a first direction as reading of a signal corresponding to first imaging starts for one frame using the image sensor, and charges the first urging member and the blade member. The controller rotates the motor in a second direction reverse to the first direction after a charge of the blade member by the first urging member is completed, completes reading the signal corresponding to the first imaging before opening the exposure opening, and stops rotating the motor in the second direction.

Abstract: A technique capable of adjusting a thickness balance of a film between substrates stacked in a process chamber of a substrate processing apparatus, includes a method of manufacturing a semiconductor device, including: (a) supplying source gas to substrates through a first nozzle vertically disposed along a stacking direction of the substrates in a process chamber where the substrates are stacked and accommodated; and (b) supplying reactive gas to the substrates through a second nozzle provided with opening portions and vertically disposed along the stacking direction of the substrates in the process chamber while adjusting a partial pressure balance of the reactive gas in the stacking direction of the substrates to a desired state along the stacking direction of the substrates, wherein an opening area of each of the opening portions increases along a direction from an upstream side to a downstream side of the second nozzle.

Abstract: A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

Abstract: A magnetic sensor includes a magnetic detection element circuit that includes first and second magnetic detection elements, which are connected in series, and an output terminal, which is positioned between the first and second magnetic detection elements; an impedance matching device, which has a prescribed input voltage range and is connected to an output terminal of the magnetic detection element circuit; a first current supply source, which supplies an electric current to the magnetic detection element circuit; and a second current supply source, which supplies an electric current to the impedance matching device. A resistor is provided between the output terminal of the magnetic detection element circuit and the first current supply source and/or a reference electric potential point.

Abstract: A method of generating a task plan that defines a plurality of execution times of a plurality of tasks by using a computer, the method includes acquiring attribute information indicating a plurality of attributes of the plurality of tasks when the task plan is generated so that the plurality of tasks are executed within a first time period, and executing, based on the acquired attribute information, a determination process that determines the plurality of execution times of the plurality of tasks so that a plurality of attribute values of the plurality of attributes of the plurality of tasks increase or decrease as time passes within the first time period.

Abstract: A method of creating, by a computer, a task plan that prescribes an execution time of a task on which a completion time limit is set, the method includes allocating the execution time of at least one first task in a first period, calculating a first total time length for execution of the at least one first task allocated in the first period, identifying at least one second task that is not allocated in the first period and has the completion time limit set in the first period, calculating a second total time length for execution of the at least one second task, and displaying the first total time length and the second total time length on a display device.

Abstract: An imaging apparatus includes a controller configured to control a motor and an image sensor. The controller rotates the motor in a first direction as reading of a signal corresponding to first imaging starts for one frame using the image sensor, and charges the first urging member and the blade member. The controller rotates the motor in a second direction reverse to the first direction after a charge of the blade member by the first urging member is completed, completes reading the signal corresponding to the first imaging before opening the exposure opening, and stops rotating the motor in the second direction.

Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: A non-transitory computer-readable recording medium stores a compressing program that causes a computer to execute a process including: extracting words from a file serving as a processing target; counting how many times each of the extracted words appears; registering bit strings each expressing, in multiple bits, the number of times of appearance into an index so as to be kept in correspondence with the words and the file; among the plurality of bit strings registered in the index while being kept in correspondence with the words and the file, each rearranging, within the bit string, bits included in a first bit string and bits included in a second bit string, so as to be in a different order; and compressing the index in which the bits have been rearranged, by using mutually-different mathematical functions.

Abstract: There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

Abstract: On each negative plate (1), a non-woven fabric (2) composed of fibers of at least one material selected from a group of materials comprising glass, pulp and polyolefins comes into contact with the entire surface of the plate without being integrated with the plate. Each negative plate (1), which is in contact with the non-woven fabric (2), is contained in an envelope separator (3) comprising a microporous synthetic resin sheet, and is laminated with a positive plate (4). The non-woven fabric is manufactured through papermaking process in which glass fibers, pulp and silica powder are preferably used and dispersed in water as the main components.

Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.

Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

Abstract: A compression device includes a processor configured to execute a process. The process includes: storing, in a storage, a first compressed code in association with a first element, the first compressed code corresponding to a combination of a first element and a first delimiter, the first element being one of a plurality of elements constituting input data, the first delimiter being one of delimiters delimiting the plurality of elements and succeeding the first element in the input data; acquiring, from the storage, the first compressed code in response to reading a sequence of the first element and the first delimiter from the input data; and writing the first compressed code into a storage area that stores therein compressed data of the input data.

Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.

Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.

Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.

Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.

Abstract: Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate.