Abstract: The present invention provides a joining that suppresses ion migration and also has excellent corrosion resistance, high bonding strength, and high reliability at the joining, and a semiconductor device. The present invention provides semiconductor joinings comprising: at least two semiconductor constituent members; and silver-containing bonding material layers that bond the semiconductor constituent members, in which a corrosion inhibitor coating layer is provided in contact with the silver-containing bonding material layers, and a semiconductor device including the same.

Abstract: A method for growing a silicon single crystal by a Czochralski method, includes: conducting preliminary examination of growth conditions under which crystal collapse does not occur, the preliminary examination being based on a correlation between presence or absence of the crystal collapse in the silicon single crystal and a position at which an internal stress in the crystal when the silicon single crystal is grown will exceed a prescribed threshold, the position being away from a crystal growth interface; and growing the silicon single crystal in accordance with the growth conditions under which the crystal collapse does not occur, the growth conditions being determined from the preliminary examination. The method can grow a silicon single crystal while crystal collapse is effectively prevented.

Abstract: A method for growing a silicon single crystal includes determining a diameter to give the maximum value of a ratio of an equivalent stress and a critical resolved shear stress in a tail portion on the occasion of the gradual cooling of the silicon single crystal in an after-heating step, in advance; wherein, the tail portion is grown in the tail forming step under a condition that an interstitial oxygen concentration at a position of the determined diameter is 8.8×1017 atoms/cm3 (ASTM '79) or more. This method for growing a silicon single crystal by a CZ method can efficiently grow a heavy weight and large-diameter silicon single crystal while suppressing a generation of slip dislocations in the tail portion of the silicon single crystal in the after-heating step to gradually cool the crystal after finishing the tail forming step.

Abstract: A single-crystal manufacturing apparatus including: main chamber accommodating crucible and heater; pull chamber wherein a grown single-crystal is received; gas-flow guiding cylinder that has opening through which the single-crystal passes and extends downward from ceiling of main chamber; seed chuck configured to hold a seed crystal; and heat insulation plate that is level with lower end of the opening of gas-flow guiding cylinder when raw material is heated and melted, and pulled together with the seed crystal when single-crystal is pulled. The seed chuck includes a mounting fixture to mount heat insulation plate. Mounting fixture has a mechanism allowing heat insulation plate to be mounted so the heat insulation plate can be rotated independently of the rotation of the seed chuck. This apparatus can be readily introduced, melt raw material with low heater power; inhibit occurrence of dislocation during seeding and generation of dislocation in single-crystal when single-crystal is pulled.

Abstract: A method for growing a silicon single crystal includes determining a diameter to give the maximum value of a ratio of an equivalent stress and a critical resolved shear stress in a tail portion on the occasion of the gradual cooling of the silicon single crystal in an after-heating step, in advance; wherein, the tail portion is grown in the tail forming step under a condition that an interstitial oxygen concentration at a position of the determined diameter is 8.8×1017 atoms/cm3 (ASTM '79) or more. This method for growing a silicon single crystal by a CZ method can efficiently grow a heavy weight and large-diameter silicon single crystal while suppressing a generation of slip dislocations in the tail portion of the silicon single crystal in the after-heating step to gradually cool the crystal after finishing the tail forming step.

Abstract: A single-crystal manufacturing apparatus including: main chamber accommodating crucible and heater; pull chamber wherein a grown single-crystal is received; gas-flow guiding cylinder that has opening through which the single-crystal passes and extends downward from ceiling of main chamber; seed chuck configured to hold a seed crystal; and heat insulation plate that is level with lower end of the opening of gas-flow guiding cylinder when raw material is heated and melted, and pulled together with the seed crystal when single-crystal is pulled. The seed chuck includes a mounting fixture to mount heat insulation plate. Mounting fixture has a mechanism allowing heat insulation plate to be mounted so the heat insulation plate can be rotated independently of the rotation of the seed chuck. This apparatus can be readily introduced, melt raw material with low heater power; inhibit occurrence of dislocation during seeding and generation of dislocation in single-crystal when single-crystal is pulled.

Abstract: A method for growing a silicon single crystal by a Czochralski method, includes: conducting preliminary examination of growth conditions under which crystal collapse does not occur, the preliminary examination being based on a correlation between presence or absence of the crystal collapse in the silicon single crystal and a position at which an internal stress in the crystal when the silicon single crystal is grown will exceed a prescribed threshold, the position being away from a crystal growth interface; and growing the silicon single crystal in accordance with the growth conditions under which the crystal collapse does not occur, the growth conditions being determined from the preliminary examination. The method can grow a silicon single crystal while crystal collapse is effectively prevented.

Abstract: A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.

Abstract: A silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material melted in a quartz crucible based on a Czochralski method, the method comprising the steps of: applying a direct current voltage in such a manner that an outer wall of the quartz crucible acts as a positive electrode and an electrode immersed into the melt of the silicon raw material acts as a negative electrode, the immersed electrode being placed separately from a pulling member for pulling the single crystal; and growing the single crystal with the pulling member while passing an electric current through the electrode, and a pulling apparatus thereof.