Abstract: In an image forming apparatus, a control unit performs a control to cause an exposing unit to expose a plurality of image bearing members at different times to form exposure regions on a plurality of image bearing members, to acquire results acquired by applying direct current voltage lower than discharge start voltage to a plurality of abutting members by an applying unit when the exposure region pass by the abutting parts against the abutting members and detected by a detecting unit, and to, based on the acquired results of the detections, acquire information regarding the surface potentials of the a plurality of image bearing members.

Abstract: Particularly provided is a method and a system for screening nanoparticles which allow effective search of conditions for surface modification of nanoparticles and reduction in the time, the labor, and the amount of a sample required for the surface modification compared with conventional techniques. The method for screening nanoparticles includes the steps of: dividing a nanoparticle suspension for a respective plurality of containers provided in a containment receptacle; performing surface modification on nanoparticles under different conditions for the respective containers; preparing evaluation samples by adding a dispersion medium into each container and mixing the nanoparticles and the dispersion medium; and performing evaluation on the evaluation sample in each container by optical analysis.

Abstract: An image forming apparatus using a contact charging method includes a control unit capable of executing cleaning in a post-rotation step at the end of a job and in an inter-image step during execution of the job. The cleaning involves moving toner adhering to a charging member from the charging member to an image bearing member. The job is a series of operations started by a predetermined start instruction and involving forming an image on one or more recording materials and outputting the one or more recording materials. When an instruction to start the next job is input during execution of cleaning in the post-rotation step, the control unit stops the cleaning in the middle of the execution, starts the next job, and adjusts timing for executing subsequent cleaning on the basis of information. relating to the amount of cleaning executed before being stopped in the middle of the execution.

Abstract: A solid-state imaging apparatus comprises a pixel array, a first column output line provided for each column of the pixel array, a first constant current source, a scanning unit configured to select the pixel portions for each row, and a current control unit configured to control current values, wherein the scanning unit can switch between a normal readout mode and a mixing readout mode, and in the mixing readout mode, the current control unit controls the current values of the first column output lines so that the current value of the first column output line to which the signals of at least one color are simultaneously output is smaller than the current value of the first column output line to which the signals of another color are simultaneously output.

Abstract: A toner circulation and a toner reservoir are formed in the vicinity of a developing roller. A member to form a toner reservoir is movable and is stopped during at least an image-forming period.

Abstract: A control unit of an image forming apparatus controls, in an image forming mode, a potential difference obtained by subtracting the voltage applied to the developer bearing member from the voltage applied to the regulating member so that the potential difference is set to the polarity of the developer, and the control unit controls, in a lubricant discharge mode, the potential difference obtained by subtracting the voltage applied to the developer bearing member from the voltage applied to the regulating member so that the potential difference is set to the polarity of the lubricant or “0”.

Abstract: A semiconductor device includes a MOS transistor which is coupled between two terminals and discharges current which flows caused by generation of static electricity and a diode which is coupled between a back gate of the MOS transistor and one of the terminal and has a polarity which is reversed to the polarity of a parasitic diode which is formed between the back gate and a source of the MOS transistor.

Abstract: An image sensor comprising: a pixel array in which a plurality of unit pixels are arranged in a matrix; a plurality of signal output lines provided for each column of the pixel array; a signal readout circuit provided for each column of the pixel array; and a control circuit for controlling a signal from the unit pixel of each column in a first row to be output to any of the signal output lines, and controlling the signal output to the any of the signal output lines to be input to the signal readout circuit. The control circuit controls, for each column, a signal from the unit pixel in a second row to be output to another of the signal lines while the signal output to the any of the signal output lines is being input to the signal readout circuit.

Abstract: A developer container includes a frame, provided with an opening, for accommodating a developer; a sealing member, including a folded-back portion, for sealing the opening; and a sandwiching portion for sandwiching the folded-back portion of the sealing member. In a plane perpendicular to the opening, the sealing member is nonwelded in the sandwiching portion.

Abstract: A semiconductor device provided with: a first input/output circuit connected to a first pad; a second input/output circuit disposed in the direction along one side constituted by a chip edge in relation to the first input/output circuit, the second input/output circuit being connected to a second pad; and an ESD protective circuit disposed near the outer-side chip edge of the first and second input/output circuits. The ESD protection circuit is provided with a resistor, a capacitor, an inverter, and an N-channel-type transistor.

Abstract: The electrode according to an embodiment includes an electrode layer and an organic fiber-containing layer. The organic fiber-containing layer is provided on the electrode layer. The organic fiber-containing layer includes an organic fiber. The organic fiber-containing layer has a ratio [?m] within a range of 1.1 to 2.55, where tW is a thickness [?m] in a wet state and tD is a thickness [?m] in a dry state. A ratio dW/dD is within a range of 0.95 to 1.05, where dW is an average fiber diameter [nm] of the organic fiber included in the organic fiber-containing layer in the wet state, and dD is an average fiber diameter [nm] of the organic fiber included in the organic fiber-containing layer in the dry state.

Abstract: A semiconductor device that can hold ESD immunity with a simple configuration is provided. The semiconductor device includes a power supply wiring, a ground wiring, an input circuit coupled between the power supply wiring and the ground wiring, an input pad which is coupled with the input circuit and to which a negative voltage lower than a voltage supplied to the ground wiring can be inputted, a plurality of first diodes provided between the ground wiring and the input pad, and a second diode provided between the input pad and the power supply wiring. A reverse bias breakdown voltage of the second diode is greater than a reverse bias breakdown voltage of each of the first diodes.

Abstract: A toner circulation and a toner reservoir are formed in the vicinity of a developing roller. A member to form a toner reservoir is movable and is stopped during at least an image-forming period.

Abstract: There is provided a cleaning apparatus including a cleaning member configured to collect developer on an image bearing member, and a storage chamber configured to store the developer, wherein cross-sectional areas of a lengthwise center and an end portion of the storage chamber in a lengthwise direction of the storage chamber are different, the cross sections being orthogonal to the lengthwise direction.

Abstract: According to one embodiment, a nonaqueous electrolyte battery includes a case member, a negative electrode terminal, an electrode group, a negative electrode lead, a rupture member, and a gas releasing portion. The electrode group is provided in the case member, and includes positive and negative electrodes. The negative electrode lead electrically connects the negative electrode terminal to the negative electrode. The gas releasing portion is provided in the case member, is able to transfer a heat from the negative electrode lead and includes a zeolite-based porous material.

Abstract: A non-aqueous electrolyte secondary battery of an embodiment includes an exterior member, a negative electrode containing a titanium-containing oxide housed in the exterior member, a positive electrode housed in the exterior member, a separator housed in the exterior member and arranged between the positive electrode and the negative electrode, and a non-aqueous electrolyte solution housed in the exterior member. At least one type or more chain carbonates are contained in a solvent of the non-aqueous electrolyte solution. A self-diffusion coefficient of the chain carbonate in ?20° C. is front 1.4×10?10 to 2.0×10?10 m2/sec.

Abstract: An image sensor having a pixel unit in which a plurality of pixels are two-dimensionally arranged, and a scanning unit that selects row or rows and causes signals to be output from pixels in the selected row or rows, each of the pixels comprising: a photoelectric converter; a storage portion; a transfer portion configured to transfer a signal charge generated by the photoelectric converter to the storage portion, if each of the pixels is included in the selected row or rows; and an output portion configured to output a pixel signal corresponding to the signal charge transferred to the storage portion. In a merged readout mode, a capacitance of the storage portion of a pixel in a row or rows except a predetermined row among the plurality of selected rows is different from that in the predetermined row.

Abstract: A semiconductor device includes a resin case which houses a semiconductor element, a plurality of lead frames disposed in the principal plane of a base of the resin case with spaces therebetween, and a block portion disposed over a space between adjacent lead frames along the adjacent lead frames. With the semiconductor device, the disposition of the block portion makes creepage distance long, compared with a case where the block portion is not disposed and therefore a space between the adjacent lead frames is flat. Accordingly, even if metal atoms contained in the lead frames or the like migrate on an insulator or at an interface because of migration, a conduction path is hardly formed between the adjacent lead frames. That is to say, a short circuit hardly occurs between the adjacent lead frames with the block portion therebetween. This semiconductor device provides improved reliability.

Abstract: A developer container includes a frame, provided with an opening, for accommodating a developer; a sealing member, including a folded-back portion, for sealing the opening; and a sandwiching portion for sandwiching the folded-back portion of the sealing member. In a plane perpendicular to the opening, the sealing member is nonwelded in the sandwiching portion.

Abstract: In general, according to one embodiment, a wound electrode group wound in a flat-shape is provided. The laminate includes a positive electrode, a negative electrode, and a separator provided between the positive electrode and the negative electrode. The negative electrode contains a negative electrode active material whose operating potential is nobler than 1.0 V (vs. Li/Li+). Both surfaces of the edge part of the positive electrode face the negative electrode through the separator. Both surfaces of the edge part of the negative electrode face the positive electrode through the separator. An innermost circumference of the wound electrode group includes the edge part of the positive electrode and the edge part of the negative electrode.