Abstract: Provided is a two-stroke internal combustion engine, including: a fuel injection valve configured to supply a fuel to a crank chamber; an intake passage configured to allow only air to be sucked thereinto under a negative pressure generated when a piston is actuated; and a scavenging passage that allows communication between the crank chamber and a combustion chamber. The intake passage is branched into a first intake passage and a second intake passage. The first intake passage communicates with the crank chamber. The second intake passage communicates with the scavenging passage. The fuel injection valve is configured to inject the fuel toward at least one of the first intake passage or the crank chamber. Further, air stagnant in the scavenging passage at end of air suction serves as leading air to contribute to scavenging.

Abstract: A dust solidification system includes: a preduster for sucking dust with a negative pressure generated by a negative pressure generating source, removing solidification-inhibiting substances from the dust, and making the dust with a reduced solidification-inhibiting substance content rate flow toward the source; a dust capturing mechanism for capturing the dust flowing from the preduster and allowing the dust to fall; a storage tank for storing the dust captured by and falling from the capturing mechanism; and a dust solidifying mechanism for solidifying the dust in a forming chamber; and further includes one or more of the following: a dust re-scattering prevention mechanism for preventing re-scattering of the dust falling from the capturing mechanism; a stirring mechanism for stirring the dust loaded into the solidifying mechanism; and an air releasing mechanism for preventing air from entering the forming chamber by releasing air flowing into the storage tank from the solidifying mechanism.

Abstract: An object of the present invention is to provide a dust collector including a pulse jet type dust removal mechanism capable of uniformly removing dust over the entire length of a cylindrical filter without increasing the pressure loss of the cylindrical filter; and a dust removal method for such a dust collector.

Abstract: An object of the present invention is to provide a dust collector including a pulse jet type dust removal mechanism capable of uniformly removing dust over the entire length of a cylindrical filter without increasing the pressure loss of the cylindrical filter; and a dust removal method for such a dust collector.

Abstract: A natural yeast extract which is rich in glutamic acid and therefore has an impact at first taste. Further, provided is a yeast extract which is also rich in 5?-guanylic acid or 5?-inosinic acid and therefore has strong umami. Further, provided is a yeast mutant capable of accumulating a large amount of glutamic acid, glutamine and ribonucleic acid for obtaining such a yeast extract. A yeast mutant to which resistance to organic acids and analogues thereof has been imparted by inducing spontaneous mutation, accumulates a significant amount, i.e., 10% by weight or more of the total of free glutamic acid and glutamine in the cell, and further accumulates 5% by weight or more of a ribonucleic acid. The yeast extract produced by using this strain contains 20% by weight or more of L-glutamic acid, and further contains 3% by weight or more of 5?-IG.

Abstract: A natural yeast extract which is rich in glutamic acid and therefore has an impact at first taste. Further, provided is a yeast extract which is also rich in 5?-guanylic acid or 5?-inosinic acid and therefore has strong umami. Further, provided is a yeast mutant capable of accumulating a large amount of glutamic acid, glutamine and ribonucleic acid for obtaining such a yeast extract. A yeast mutant to which resistance to organic acids and analogues thereof has been imparted by inducing spontaneous mutation, accumulates a significant amount, i.e., 10% by weight or more of the total of free glutamic acid and glutamine in the cell, and further accumulates 5% by weight or more of a ribonucleic acid. The yeast extract produced by using this strain contains 20% by weight or more of L-glutamic acid, and further contains 3% by weight or more of 5?-IG.

Abstract: The present invention provides a natural yeast extract having a high-impact first taste by containing glutamic acid in a large amount. Further, the present invention provides a yeast extract having strong umami by containing 5?-guanylic acid or 5?-inosinic acid in a large amount. In addition, the present invention provides a yeast mutant accumulating glutamic acid, glutamine, and ribonucleic acid in a large amount for obtaining the yeast extract. A yeast mutant inducing a natural mutation to which organic acid-tolerance or organic acid analogue-tolerance is imparted accumulates free glutamic acid and glutamine in such a significant amount as a total amount of 10% by weight or more in a cell, and further accumulates ribonucleic acid in an amount of 5% by weight or more. A yeast extract produced using the above yeast mutant contains L-glutamic acid in an amount of 20% by weight or more, and further contains 5?-IG in an amount of 3% by weight or more.

Abstract: The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer, making a first thermal processing to react the nickel platinum film with the source/drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71° C. or more containing hydrogen peroxide.

Abstract: The method of manufacturing the semiconductor device comprises the steps of forming a MOS transistor 26 including a gate electrode 16 and source/drain diffused layers 24 formed in the silicon substrate 10 on both sides of the gate electrode 16, forming a NiPt film 28 over the silicon substrate 10, covering the gate electrode 16 and the source/drain diffused layers 26, making thermal processing to react the NiPt film 28 with the upper parts of the source/drain diffused layers 24 to form Ni(Pt)Si films 34a, 34b on the source/drain diffused layers 24, and removing selectively the unreacted part of the NiPt film 28 using a chemical liquid of above 71° C. including 71° C. containing hydrogen peroxide and forming an oxide film on the surface of the Ni(Pt)Si films 34a, 34b.

Abstract: The semiconductor manufacturing method comprises the step of forming a metal alloy film of an alloy of a metal of Ni or others and a noble metal over a semiconductor substrate containing a region where silicon is partially exposed; the step of selectively reacting the silicon in the region and the metal alloy film by thermal processing to form metal silicide film containing the metal of Ni or others and the noble metal on the region; and the step of removing the metal alloy film remaining unreacted by using a solution containing hydrogen peroxide with a transition metal, which has higher ionization tendency than the metal of Ni or others, dissolved in.

Abstract: A natural yeast extract which is rich in glutamic acid and therefore has an impact at first taste. Further, provided is a yeast extract which is also rich in 5?-guanylic acid or 5?-inosinic acid and therefore has strong umami. Further, provided is a yeast mutant capable of accumulating a large amount of glutamic acid, glutamine and ribonucleic acid for obtaining such a yeast extract. A yeast mutant to which resistance to organic acids and analogues thereof has been imparted by inducing spontaneous mutation, accumulates a significant amount, i.e., 10% by weight or more of the total of free glutamic acid and glutamine in the cell, and further accumulates 5% by weight or more of a ribonucleic acid. The yeast extract produced by using this strain contains 20% by weight or more of L-glutamic acid, and further contains 3% by weight or more of 5?-IG.

Abstract: The semiconductor manufacturing method comprises the step of forming a metal alloy film of an alloy of a metal of Ni or others and a noble metal over a semiconductor substrate containing a region where silicon is partially exposed; the step of selectively reacting the silicon in the region and the metal alloy film by thermal processing to form metal silicide film containing the metal of Ni or others and the noble metal on the region; and the step of removing the metal alloy film remaining unreacted by using a solution containing hydrogen peroxide with a transition metal, which has higher ionization tendency than the metal of Ni or others, dissolved in.

Abstract: The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel platinum film over the semiconductor substrate, covering the gate electrode and the source/drain diffused layer, making a first thermal processing to react the nickel platinum film with the source/drain diffused layer to form a nickel platinum silicide film, and removing an unreacted part of the nickel platinum film using a chemical liquid of 71° C. or more containing hydrogen peroxide.

Abstract: An E-mail communication apparatus that edits files attached to an E-mail and transmits the E-mail. The apparatus comprises a mail generating unit, a temporary-file generating unit, a temporary-file editing unit, an attached-file updating unit, and a transmitting unit. The mail generating unit generates a mail which is to be transmitted and to which a file is attached. The temporary-file generating unit generates a temporary file by copying the file attached to the mail that is to be transmitted. The temporary-file editing unit calls an application associated with the file attached to the mail that is to be transmitted, edits the temporary file and updates the temporary file. The attached-file updating unit replaces the file attached to the mail that is to be transmitted, with the temporary file copied. The transmitting unit transmits the mail to be transmitted.

Abstract: An information reference apparatus includes: a reference information storage part storing predetermined reference information; a reference range defining information storage part storing predetermined reference range defining information; and a reference range defining part referring to the reference range defining information stored for a user by the reference range defining information storage part and defining a range of the reference information stored by the reference information storage part, in which range the reference information is available for the user to refer to.

Abstract: A field programmable gate array comprises: a first wiring group composed of a plurality of first wirings (C1, C2, C3, . . . ); a second wiring group composed of a plurality of second wirings (R1, R2, R3, . . . ); a plurality of programmable elements (A11, A12, A13, . . . ) arranged into an array pattern at at least one of plural intersections between the first wirings and the second wirings, each of the programmable element being connected to each of the first wirings (C1, C2, C3, . . . ) at one end thereof and to each of the second wirings (R1, R2, R3, . . . ) at the other end thereof and being programmed by a programming voltage applied between the first wiring and second wiring to switch connection between the first and second wirings to disconnection between the two wirings or vice versa; and voltage supplying sections (CD1, RD1) for applying a programming voltage between the first and second wirings (C1, C2, C3, . . . ; R1, R2, R3, . . .

Abstract: The associative memory capable of improving the efficiency in replacing an entry and testability of compare operation. The associative memory includes a Content Addressable Memory (CAM) cell array for executing a compare operation; a Random Access Memory (RAM) cell array for operating responsive to a result of the CAM cell array; and a HIT entry number detection circuit for receiving a result of the compare operation in the CAM cell array and outputting a HIT entry number.

Abstract: According to this invention, a bit data comparing section has a plurality of groups each having a plurality of bit comparators. Each of the plurality of bit comparators compares one bit of address data input to the bit comparator with bit data stored in the bit comparator in advance and outputs a comparison result. Output data from a plurality of bit comparators belonging to one group are unified by one subsense line belonging to the group and input to a control terminal of a switching element. The switching element performs a switching operation in accordance with the input data. A main sense line is connected to the switching element, and a load circuit is connected between the main sense line and a power supply terminal.

Abstract: An amplifier circuit includes two inverter circuits. Each inverter circuit provides an output signal in response to a respective input signal. The inverter circuits are supplied with a power source voltage through a MOS transistor circuit. The MOS transistor circuit includes two MOS transistors each having gate electrodes supplied with the output of the inverter circuits.