Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.

Abstract: Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers.

Abstract: A semiconductor light emitting device and method of manufacturing the same can provide a light source that has less variation in color and brightness and can reduce radiation of light that is possibly harmful to humans. The device can include a casing that has a first cavity having an oblique surface with a reflective surface formed thereon and a second cavity having an almost vertical side. A reflective frame having an oblique surface with a third reflective surface formed thereon can be formed on the casing. A semiconductor light emitting element can be mounted on the bottom in the first cavity. A first resin composed of a light-transmissive resin can be filled in the first cavity and then cured. Further, a second resin containing a fluorescent material dispersed in a light-transmissive resin can be filled in the second cavity and then cured while the casing is turned upside down to form a high-density fluorescent material layer near the surface of the second resin.

Abstract: A semiconductor light emitting device and method of manufacturing the same can provide a light source that has less variation in color and brightness and can reduce radiation of light that is possibly harmful to humans. The device can include a casing that has a first cavity having an oblique surface with a reflective surface formed thereon and a second cavity having an almost vertical side. A reflective frame having an oblique surface with a third reflective surface formed thereon can be formed on the casing. A semiconductor light emitting element can be mounted on the bottom in the first cavity. A first resin composed of a light-transmissive resin can be filled in the first cavity and then cured. Further, a second resin containing a fluorescent material dispersed in a light-transmissive resin can be filled in the second cavity and then cured while the casing is turned upside down to form a high-density fluorescent material layer near the surface of the second resin.