Abstract: A method for making an enameled steel sheet includes the steps of spraying a slurry to form a slurry layer onto a surface of a substrate and firing the slurry layer. In this method, the slurry has a static surface tension of 50 dyne/cm or less and an apparent viscosity of 500 mPa·s that is measured with a model E viscometer at a rotation of 100 rpm. Alternatively, the method includes a step of spraying a slurry for forming an enamel layer onto a surface of a substrate, wherein the substrate is vibrated when the slurry is applied or when the slurry applied is still fluid.

Abstract: A semiconductor memory device, such as a DRAM, which needs to be refreshed for retaining data, is provided with a storing portion for storing data therein, and a busy signal outputting portion outputting a busy signal during the refresh operation.

Abstract: A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By the constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

Abstract: A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By the constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

Abstract: A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By the constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

Abstract: A semiconductor memory device, such as a DRAM, which needs to be refreshed for retaining data, is provided with a storing portion for storing data therein, and a busy signal outputting portion outputting a busy signal during the refresh operation.

Abstract: A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By the constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

Abstract: A semiconductor memory device manufactured separately is connected to an interface unit of a semiconductor device. An internal memory formed in the semiconductor device is connected to at least a part of the interface unit. A memory selecting circuit makes the internal memory accessible in a first operation mode, and makes the internal memory inaccessible in a second operation mode. Therefore, for example, putting the semiconductor device into the first operation mode and accessing the internal memory enables the semiconductor device to operate as a predetermined system even when the semiconductor memory device is not connected to the interface unit. The substitution of the internal memory for the semiconductor memory device makes it possible for the semiconductor device to test the interface unit and associated circuits thereof by itself. This consequently allows improvement in the assembly yield of multichip modules.

Abstract: A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer.

Abstract: A command receiver circuit receives a command signal in synchronization with either a rising edge or a falling edge of a clock signal. A data input/output circuit starts an output of read data and an input of write data in synchronization with the edges of the clock signal which are set in response to reception timing of the command signal. Since the command signal can be received in synchronization with both edges of the clock signal, it is possible to halve a clock cycle when a reception rate is the same as that of the conventional art. As a result of this, in a system on which the semiconductor memory device is mounted, it is possible to halve the frequency of a system clock and to reduce power consumption of a clock synchronization circuit in the system, without reducing a data input/output rate for the semiconductor memory device.

Abstract: Disclosed is a semiconductor device for outputting an output signal with a given phase held relative to an external clock despite a difference in characteristic, a change in temperature, and a fluctuation in supply voltage. The semiconductor device comprises an input circuit for inputting the external clock and outputting a reference signal, an output circuit for receiving an output timing signal and outputting an output signal according to the timing of the output timing signal, and an output timing control circuit for controlling the output timing so that the output signal exhibits a given phase relative to the external clock.

Abstract: A semiconductor integrated circuit includes a switch unit for controlling the supply of a power source voltage to a signal amplification circuit for receiving an input signal, and a control unit for selectively turning ON and OFF the switch unit in accordance with the amplitude or frequency of the input signal. By this constitution, it is possible to provide an input circuit or an output circuit capable of being applied to an input/output interface adapted for a small amplitude operation.

Abstract: A system for signal transmission has at least one bus for the signal transmission and a reflection-prevention resistance provided on a stub connected to the bus for preventing reflection of signals at an intersection between the bus and the stub. The system includes termination resistances, and a switch unit for coupling the bus to termination voltage via the termination resistances in a first mode and for disconnecting the bus from the termination voltage in a second mode.

Abstract: A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer.

Abstract: The present invention is aimed at providing a semiconductor memory device which performs a row-address pipe-line operation in accessing different row addresses so as to achieve high-speed access. The semiconductor memory device according to the present invention includes a plurality of sense-amplifiers which store data when the data is received via bit lines from memory cells corresponding to a selected word line, a column decoder which reads parallel data of a plurality of bits from selected sense amplifiers by simultaneously selecting a plurality of column gates in response to a column address, a data-conversion unit which converts the parallel data into serial data, and a precharge-signal-generation unit which generates an internal precharge signal a first delay-time period after generation of a row-access signal for selecting the selected word line so as to reset the bit lines and said plurality of sense-amplifiers.

Abstract: A semiconductor device having a register and an information generation circuit can reduce data to be transferred, and consequently save electric power. The register stores first information. The information generation circuit generates, in response to a signal acquired from the an exterior of the device, second information indicating which bits of the first information is to be inverted.

Abstract: The present invention is that in a dynamic memory circuit, first and second internal operation cycles are assigned to one external operation cycle according to external commands, a memory core performs a read operation which corresponds to a read command at the first internal operation, and performs a refresh operation which responds to a refresh command at the second internal operation cycle. Also the memory core performs a refresh operation which responds to a refresh command at the first internal operation cycle, and performs a write operation which corresponds to a write command at the second internal operation cycle. It is preferable that when the read or write command is not input, the refresh operation is performed at the earlier internal operation cycle. And a refresh command generation circuit which generates the refresh command at a refresh time is created in the memory circuit.

Abstract: A semiconductor device for generating first and second internal clocks complementary with each other from an external clock and usable for both a system of a type using a complementary clock and a system of a type generating a 180° phase clock internally, is disclosed. A first clock input circuit (buffer) is supplied with a first external clock and outputs a first internal clock. A second clock input circuit (buffer) is supplied with a second external clock complementary with the first external clock and outputs a second clock. A ½ phase clock generating circuit generates a ½ phase shift signal 180° out of phase with the first internal clock. A second external clock state detection circuit judges whether the second external clock is input to the second clock input buffer.

Abstract: A memory system having a simple configuration capable of high-speed data transmission is disclosed. Data is output from a controller or a memory in synchronism with a clock or a data strobe signal. The clock or the data strobe signal is transmitted by a clock signal line or a data strobe signal line, respectively, arranged in parallel to a data signal line. A delay circuit delays by a predetermined time the signals transmitted through the clock signal line or the data strobe signal line. The clock or the data strobe signal thus assumes a phase suitable for retrieval at the destination, so that the data signal can be retrieved directly by means of the received clock or the received data strobe signal.

Abstract: A semiconductor memory device manufactured separately is connected to an interface unit of a semiconductor device. An internal memory formed in the semiconductor device is connected to at least a part of the interface unit. A memory selecting circuit makes the internal memory accessible in a first operation mode, and makes the internal memory inaccessible in a second operation mode. Therefore, for example, putting the semiconductor device into the first operation mode and accessing the internal memory enables the semiconductor device to operate as a predetermined system even when the semiconductor memory device is not connected to the interface unit. The substitution of the internal memory for the semiconductor memory device makes it possible for the semiconductor device to test the interface unit and associated circuits thereof by itself. This consequently allows improvement in the assembly yield of multichip modules.