Abstract: A transportation management system for a tank container allowed to be placed on a container freight car, the tank container including a vessel capable of accommodating liquefied natural gas and a frame body which supports the vessel, the transportation management system includes a vessel management device and a transportation management device to communicate with the vessel management device. The vessel management device includes a vessel information detection unit to detect vessel information of the vessel included in the tank container, and a vessel management device-side communication unit to transmit the vessel information detected by the vessel information detection unit to the transportation management device.

Abstract: A transportation management system for a tank container allowed to be placed on a container freight car, the tank container including a vessel capable of accommodating liquefied natural gas and a frame body which supports the vessel, the transportation management system includes a vessel management device and a transportation management device to communicate with the vessel management device. The vessel management device includes a vessel information detection unit to detect vessel information of the vessel included in the tank container, and a vessel management device-side communication unit to transmit the vessel information detected by the vessel information detection unit to the transportation management device.

Abstract: Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.

Abstract: Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.