Abstract: A crystallographic observation apparatus for the observation of behavior of crystals under pressure and for the measurement of the crystallization pressure and pressure of fusion of substances. The apparatus comprises a pressure chamber having a cavity and provided with a transparent observation window or windows, a pressurizing device for pressurizing the cavity of the pressure vessel, and small, entirely or partly transparent, entirely or partly elastic sample containing means for containing a sample, provided within the cavity of the pressure vessel. The sample can easily be changed for another sample simply by changing the sample containing means containing the former sample for another sample containing means containing the latter sample, or the apparatus can easily be cleaned after the completion of observation of a sample for the observation of the next sample, simply by washing the sample containing means.

Abstract: With a packaged semiconductor device of this invention, an IC pellet or chip supported on a mounting unit is encapsulated in plastics material, for example, epoxy resin or silicone resin. A plurality of lead strips are disposed at one end in the proximity of the mounting part of the mounting unit. The lead strips are electrically connected to the respective conductive pads of the IC pellet set on the mounting part of the mounting unit. The lead strips extend at the other end outside of an plastics material. Mounting unit-reinforcing side walls project substantially at right angles from the edges of the flat part of the mounting unit. The heat-radiating legs of the mounting unit extend substantially at right angles from the low edges of the side walls with the bottom surface of said legs exposed to the outside of the plastics material.

Abstract: A semiconductor device includes first and second resistor regions having the same resistance and formed in a main surface of a silicon substrate to extend in a perpendicular direction. When the resistor regions have a p-conductivity type, said main surface is a {100} face, {511} face, {811} face or {911} face. When the resistor regions are of an n-conductivity type, said main surface is a {111} face.