Abstract: An information presentation apparatus for a vehicle includes an indicator mounted on the vehicle for indicating a target direction and a control unit for controlling the indicator. The control unit includes a function for acquiring a current position of the vehicle and a reference direction of the vehicle, a function for specifying a target and acquiring a target position, a function for calculating a target angle that indicates a target direction against the reference direction based on the target position, the current position and the reference direction, and a function for generating a presentation command based on the calculated target angle so as to indicate the target direction by the indicator. According to the apparatus, information for specifying the target position can be provided.

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract: The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract: A guide system terminal device is provided to facilitate group operation vehicles. The guide system terminal device has a transceiver that receives the traveling environment information from another vehicle, such as for the turn signal, vehicle speed, running position, a road change judgment module that judges course changes by the other vehicle based on the traveling environment information of the other vehicle, and a user interface that outputs the judgment result obtained by road change judgment module. For example, the road change judgment module judges a left/right turn to have occurred when the blinker information acquired by turn signal sensor lasts longer than a prescribed time, and when the maximum value of the change in vehicle speed exceeds a prescribed level.

Abstract: An information presentation apparatus for a vehicle includes an indicator mounted on the vehicle for indicating a target direction and a control unit for controlling the indicator. The control unit includes a function for acquiring a current position of the vehicle and a reference direction of the vehicle, a function for specifying a target and acquiring a target position, a function for calculating a target angle that indicates a target direction against the reference direction based on the target position, the current position and the reference direction, and a function for generating a presentation command based on the calculated target angle so as to indicate the target direction by the indicator. According to the apparatus, information for specifying the target position can be provided.

Abstract: A vehicle information processing system 100 conducts wireless communications between a preceding vehicle 200 and a succeeding vehicle 201, and exhibits information on a winker operation of the preceding vehicle 200 to a driver of the succeeding vehicle 201, and includes vehicle-mounted apparatuses 1 in the preceding and succeeding vehicles, of which one 1 in the preceding vehicle 200 wirelessly transmits information on a winker operation of the preceding vehicle, and the other 1 in the succeed vehicle 201 receives the wirelessly transmitted information on the winker state, and exhibits same to a driver of the succeeding vehicle 201, while the apparatus 1 in the succeeding vehicle 201 estimates a relationship between the preceding vehicle 200 and the succeeding vehicle 201, judges whether an exhibition liming of the information on the winker state is to be hastened or delayed based on an estimation result, and exhibits the information on the winker state at the judged timing.

Abstract: The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode

Abstract: An on-vehicle communication apparatus provided with: endpoint radio communication devices each provided for each one or more on-vehicle units; gateway radio communication devices which are respectively arranged in function networks provided with the above-mentioned one or more on-vehicle units, and performs radio communications with the endpoint radio communication devices that are included in the function network; and power sources each provided for any one of the above-mentioned one or more on-vehicle units and the above-mentioned one or more function networks.

Abstract: The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract: A bipolar transistor having the enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, to have jut regions on the edges of its generally rectangular region. A mask film, e.g., insulating film, is formed to cover the rectangular region and jut regions, and the base layer is etched by use of the insulating film for masking thereby to form a base mesa. Consequently, abnormal etching can be prevented from occurring along the base electrode and emitter mesa on the edges of the area where the base electrode and emitter mesa confront, and the increase of resistance between the base layer and the emitter layer can be prevented, whereby the bipolar transistor can have the enhanced characteristics.

Abstract: A bipolar transistor having enhanced characteristics is fabricated by etching a base mesa, which is formed below an emitter mesa (upper emitter layer) and a base electrode, so as to have jut regions on the edges of its generally rectangular region. A mask film, e.g., insulating film, is formed to cover the rectangular region and jut regions, and the base layer is etched by use of the insulating film as a mask to form a base mesa. Consequently, abnormal etching can be prevented from occurring along the base electrode and emitter mesa on the edges of the area where the base electrode and emitter mesa confront each other, and an increase in resistance between the base layer and the emitter layer can be prevented, whereby the bipolar transistor can have enhanced characteristics.

Abstract: The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode

Abstract: A vehicular communications apparatus is configured to calculate information on relative positions, relative velocities, and relative moving directions between own vehicle and other vehicles at a point such as a junction where other vehicles tend to affect running of the own vehicle, and to search for and decide other vehicles which are to be opponents of radio communications, based on a calculated result, and communication opponents are decided from among the searched other vehicles, and radio communications are conducted therewith, and then, the vehicular communications apparatus obtains information on the other vehicles, in a time-sequential manner and by radio communications, and present the information to a driver of the own vehicle from time to time, thereby causing the driver to recognize dynamic information on the other vehicles, enabling the own vehicle to smoothly join a flow of traffic at a junction, for example.

Abstract: The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode

Abstract: A vehicle information processing system 100 conducts wireless communications between a preceding vehicle 200 and a succeeding vehicle 201, and exhibits information on a winker operation of the preceding vehicle 200 to a driver of the succeeding vehicle 201, and includes vehicle-mounted apparatuses 1 in the preceding and succeeding vehicles, of which one 1 in the preceding vehicle 200 wirelessly transmits information on a winker operation of the preceding vehicle, and the other 1 in the succeed vehicle 201 receives the wirelessly transmitted information on the winker state, and exhibits same to a driver of the succeeding vehicle 201, while the apparatus 1 in the succeeding vehicle 201 estimates a relationship between the preceding vehicle 200 and the succeeding vehicle 201, judges whether an exhibition liming of the information on the winker state is to be hastened or delayed based on an estimation result, and exhibits the information on the winker state at the judged timing.

Abstract: A guide system terminal device is provided to facilitate group operation vehicles. The guide system terminal device has a transceiver that receives the traveling environment information from another vehicle, such as for the turn signal, vehicle speed, running position, a road change judgment module that judges course changes by the other vehicle based on the traveling environment information of the other vehicle, and a user interface that outputs the judgment result obtained by road change judgment module. For example, the road change judgment module judges a left/right turn to have occurred when the blinker information acquired by turn signal sensor lasts longer than a prescribed time, and when the maximum value of the change in vehicle speed exceeds a prescribed level.