Abstract: Provided are: a compound resin containing a hydrogenated block copolymer (X) that is a hydrogenated product of a block copolymer having a polymer block (A) mainly composed of a structural unit derived from an aromatic vinyl compound and a polymer block (B) mainly composed of a structural unit derived from a conjugated diene compound, at least one terminal of which is formed of the polymer block (A), and an oil (Y) having a kinematic viscosity at 40° C. of 25 mm2/s or less, the content of the oil (Y) relative to 100 parts by mass of the hydrogenated block copolymer (X) being 450 to 1,500 parts by mass; and a human body model containing the compound resin.

Abstract: Image sensors according to some embodiments of the inventive concepts may include a pixel array are including a plurality of pixels, a peripheral area adjacent the pixel array unit, and an organic photoelectric converting layer including a first portion positioned on the pixel area and a second portion positioned on the peripheral area. The second portion may be separated from the first portion.

Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

Abstract: Provided is a nonaqueous electrolyte secondary battery that allows a current cutoff mechanism to operate appropriately while maintaining high battery performance. The nonaqueous electrolyte secondary battery according to the present invention includes: a battery assembly provided with a positive electrode having a positive electrode active material layer retained on a positive electrode current collector, a negative electrode and a separator; a battery case housing the electrode assembly together with a nonaqueous electrolyte; and a current cutoff mechanism. The positive electrode active material layer includes a positive electrode active material and a conductive material. A compound containing a saturated cyclic hydrocarbon group is retained in at least a portion of the conductive material. The content of the compound containing a saturated cyclic hydrocarbon group is 0.5% by mass or more based on a value of 100% by mass for the total solid content of the positive electrode active material layer.

Abstract: An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.

Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.

Abstract: Provided is a non-aqueous electrolyte secondary battery that can achieve both battery characteristics during normal usage and resistance to overcharging at high levels. In this non-aqueous electrolyte secondary battery, an electrode body, which includes a positive electrode and a negative electrode, and a non-aqueous electrolyte are housed in a battery case. The battery case is provided with a current interrupt mechanism that activates when the pressure inside the case increases. The non-aqueous electrolyte contains cyclohexylbenzene and 4,4?-difluorobiphenyl as gas generating agents that decompose and generate gas when the battery reaches an overcharged state. In addition, when the overall quantity of the non-aqueous electrolyte is taken to be 100 mass %, a ratio of the content (mass %) of the 4,4?-difluorobiphenyl (W2) relative to the content (mass %) of the cyclohexylbenzene (W1) (W2/W1) is 0.025 to 0.25.

Abstract: Provided is an image sensor including an organic photoelectric layer capable of enhancing color reproduction. An image sensor includes a semiconductor substrate including a plurality of pixel regions spaced apart from each other and an isolation region therebetween. Each of the plurality of pixel regions has a unit pixel. The image sensor also includes a device isolation layer in the isolation region and surrounding the unit pixel, a first transparent electrode layer, an organic photoelectric layer, and a second transparent electrode layer. The image sensor further includes a via plug electrically connected to the first transparent electrode layer, and arranged between the device isolation layers in the isolation region. The via plug passes through the isolation region. The first transparent electrode layer, the organic photoelectric layer and the second transparent electrode layer are sequentially arranged over the semiconductor substrate.

Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

Abstract: An image sensor includes first photoelectric elements, second photoelectric elements under the first photoelectric elements, and a pixel circuit including first semiconductor devices and second semiconductor devices under second photoelectric elements. The first semiconductor devices are connected to at least one of the first photoelectric elements. The second semiconductor devices are connected to at least one of the second photoelectric elements. The first semiconductor devices are connected to different first photoelectric elements and are in one of a plurality of pixel regions.

Abstract: Systems and methods for delivering a gaseous contrast agent to the lungs of a subject.

Abstract: A battery pack includes a plurality of unit cells, each including an electrode body having a structure in which a positive electrode and a negative electrode are stacked, and a busbar that electrically connects a positive electrode terminal to a negative electrode terminal between the unit cells. The unit cells are stacked adjacent to one another in the same direction as a direction in which the positive electrode and the negative electrode of the electrode body are stacked. The busbar electrically connects the unit cells disposed apart from each other among the unit cells excluding the unit cells disposed adjacent to each other.

Abstract: An assembled battery disclosed here includes a plurality of single cell array units each including single cells that are arranged in a lamination direction of a positive electrode and a negative electrode of an electrode body as an arrangement direction. The single cell array units are disposed parallel to each other such that arrangement directions of the single cells constituting the units are parallel to each other. Then, in the assembled battery, none of the single cells included in each of the single cell array units is directly electrically connected to adjacent single cells in the same unit, but is directly electrically connected to any one of the single cells constituting another single cell array unit through a bus bar.

Abstract: There is provided an assembled battery including a plurality of single cells and a plurality of bus bars connecting the plurality of single cells in series. The plurality of single cells is arranged such that a pair of flat side surfaces faces each other. The single cells each include a battery case, a positive electrode sheet, a negative electrode sheet, a positive electrode terminal, a negative electrode terminal, an electrical resistor disposed in a conductive path between the positive electrode sheet and the positive electrode terminal, and a pressure operative type current interruption mechanism disposed in a conductive path between the negative electrode sheet and the negative electrode terminal.

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract: An electric storage apparatus includes a plurality of electric storage elements placed side by side along a predetermined direction and a restraint plate placed between two of the electric storage elements adjacent to each other in the predetermined direction. The electric storage element has a power-generating element performing charge and discharge and a case housing the power-generating element. The restraint plate has protruding portions which give a restraint force to the electric storage element and form a space between the restraint plate and the electric storage element. The power-generating element has a positive electrode plate, a negative electrode plate, and a separator placed between the positive electrode plate and the negative electrode plate. The power-generating element includes a reaction area where a chemical reaction associated with the charge and discharge occurs.

Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Abstract: An image sensor is provided. The image sensor includes a first photoelectric conversion element and a second photoelectric conversion element, which are formed in a semiconductor substrate; a red color filter formed on the first photoelectric conversion element; a cyan color filter formed on the second photoelectric conversion element; and an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range.

Abstract: The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern. The channel semiconductor pattern includes a semiconductor material having an electron mobility that is higher than an electron mobility of the photoelectric conversion layer.