Abstract: Method for manufacturing a substrate for a light-emitting device of the present invention includes: forming a first thin film for forming the first partition wall member, on the supporting substrate; forming a second thin film for forming the second partition wall member, on the first thin film by using a photosensitive resin; removing a residual portion of the second thin film that is other than a portion overlapping with the first partition wall member to be formed, as viewed from a thickness direction of the supporting substrate, by using a photolithography method; removing a residual portion of the first thin film that is other than a portion covered with the second thin film by using etching, thereby forming the first partition wall member; and removing a surface part of the second thin film by etching, thereby forming the second partition wall member.

Abstract: It is an object of the present invention to provide an organic EL device having a structure to enhance a barrier property against gases such as water vapor and oxygen which penetrate into an organic EL element formed on a substrate. That is, the present invention provides the organic EL device including a substrate 10, an organic EL element 20 holding an organic EL layer including a light emitting layer between one pair of electrodes of which at least one is transparent or translucent, a sealing layer 30 which seals the organic EL element 20 and in which multiple layers are formed by stacking an inorganic film and an organic film alternately and a sealing glass substrate 40 disposed by tightly adhering onto an uppermost organic film 33-n in the sealing layer 30, on the substrate 10.

Abstract: A display device substrate to be bonded to a driving substrate provided with a driving circuit for driving a plurality of organic electroluminescent elements, the display device substrate comprising a substrate main body; a plurality of organic electroluminescent elements provided on the substrate main body; a bank sectioning the plurality of organic electroluminescent elements on the substrate main body; a protruding pedestal provided on the substrate main body; and a first connecting electrode arranged so as to extend from the organic electroluminescent element and over the pedestal, wherein in a state where the display device substrate has been bonded to the driving substrate, the pedestal is arranged at a position where the first connecting electrode arranged on the pedestal is connected with a second connecting electrode that the driving circuit has, and the bank and the pedestal have the same height.

Abstract: A method for manufacturing a display panel comprises the steps of: forming a display device substrate 60 by providing on a first substrate 20, which is equipped with a color filter 30 on which a plurality of filter elements are arranged, a plurality of organic electroluminescent elements 40, which have the same structure as each other and which is individually equipped with a connection electrode formed with a connection terminal 46a, so that each of organic electroluminescent elements is overlapped with each of the filter elements; preparing a driving substrate 50, which comprises a driving circuit for driving the plurality of and a connection portion 52a that establishes electrical connection to the driving circuit; arranging a laminating material 74X on a surface of the display device substrate or the driving substrate so as to enclose the plurality of organic electroluminescent elements when the display device substrate and the driving substrate are laminated; and laminating the display device substrate a

Abstract: A light-emitting device comprises: a substrate; a plurality of organic electroluminescent elements provided on the substrate; and a partition defining pixel areas in each of which one of the organic EL elements is provided. The partition comprises an insulating film provided with openings each hollowly formed in an area corresponding to one of the pixel areas and a partition body provided on an opposite side of the insulating film with respect to the substrate. Each of the organic EL elements comprises a pair of electrodes and a light-emitting portion that is interposed between the electrodes and that is arranged in an area surrounded by the insulating film. The thickness of the insulating film is smaller than the thickness of the light-emitting portion.

Abstract: It is an object of the present invention to provide an organic EL device having a structure to enhance a barrier property against gases such as water vapor and oxygen which penetrate into an organic EL element formed on a substrate. That is, the present invention provides the organic EL device including a substrate 10, an organic EL element 20 holding an organic EL layer including a light emitting layer between one pair of electrodes of which at least one is transparent or translucent, a sealing layer 30 which seals the organic EL element 20 and in which multiple layers are formed by stacking an inorganic film and an organic film alternately and a sealing glass substrate 40 disposed by tightly adhering onto an uppermost organic film 33-n in the sealing layer 30, on the substrate 10.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an, organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: A thin film transistor (TFT) has a substrate. There is provided on the substrate a gate electrode, a gate insulating layer, a semiconductor layer, ohmic contact layers, electrodes (i.e., a source electrode and a drain electrode), and a protective layer in this order. An oxidized film is provided on a channel area of the semiconductor layer. With the arrangement, it is possible, without providing a channel protective layer, to prevent undesirable etching to the channel area, thereby greatly reducing the number of defective products. Since it is not necessary to make the semiconductor layer thicker than is required, it is possible to minimize the occurrence that the TFT characteristic is affected by the projected light. In addition, it is possible to realize miniaturization and to get a great aperture ratio when used as a switching element in a liquid crystal display (LCD) device.

Abstract: The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.

Abstract: A simplified method of manufacturing an active matrix substrate is disclosed. Gate wires, gate electrodes, gate insulating films, an etching stopper layer, semiconductor layers and contact layers are formed on an electrically insulating substrate. Pixel electrode material films, second electrical conductor films and second insulating films are formed successively on the substrate. The second insulating film and the second electrical conductor film are simultaneously patterned, so that source wires, source electrodes and drain electrodes are formed from the second electrical conductor film, and a protective film from the second insulating film. Then, the pixel electrode material film is patterned thereby to form pixel electrodes in a plurality of regions defined by the gate wires and the source wires.

Abstract: In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

Abstract: An object of the invention is to facilitate identifying the display color of each pixel during a test process and to apply a correction to a defective switching device in accordance with a test criterion established for each display color. On one transparent substrate, there are formed gate wiring and source wirings intersecting at right angles to each other so that insulation therebetween is maintained, and a pixel electrode and a TFT device are formed for each pixel, thus constructing one substrate member. On another transparent substrate, there is formed a counter electrode facing the pixel electrodes, and identifying means for identifying the display color of each pixel is formed on the side opposite from the side where the counter electrode is formed, the identifying means then being covered with a light-blocking member, thus constructing the another substrate member. The light-blocking member contains openings formed therethrough in portions facing the pixel electrodes.

Abstract: An object of the invention is to enhance the ashing speed of resist. A parallel plate electrode type plasma etching device is used in a mixed gas atmosphere of SF.sub.6 gas and O.sub.2 gas with the concentration of SF.sub.6 gas defined within 5 vol. % to 15 vol. %. A substrate to be treated, coated with a resist of hydrocarbon polymer is placed on a lower electrode. A high frequency electric power is applied to an upper electrode and lower electrode placed parallel to each other, and a plasma of mixed gas is generated in the reactor. A chemical reaction is induced in the resist and active ions of the plasma to vaporize and remove the resist.