Abstract: The present technique relates to a non-volatile memory circuit ensuring a small size and low power consumption while maintaining stable write. A slave latch is provided in an NVDFF, and magnetoresistive elements are connected to the slave latch. A store operation for writing information stored in the slave latch to the magnetoresistive elements is performed before power interruption, and a restore operation for reading out information stored in the magnetoresistive elements to the slave latch is performed at a time of return. The store operation and the restore operation use different paths between the slave latch and the magnetoresistive element. The present technique is applicable to a non-volatile memory circuit.

Abstract: This invention relates to a semiconductor device that reduces energy consumed to write data to a nonvolatile storing section. A write control circuit 34 stores the same data as that held in MTJ elements MTJ1 and MTJ2. In a store operation storing the data held in a slave latch 32 into the MTJ elements MTJ1 and MTJ2, the write control circuit 34 compares the data stored therein with the data held in the slave latch 32 to control whether or not to write the data to the MTJ elements MTJ1 and MTJ2. If the internally stored data coincides with the data held in the slave latch 32, the write control circuit 34 performs control not to write the data to the MTJ elements MTJ1 and MTJ2.

Abstract: This invention relates to a semiconductor device that reduces energy consumed to write data to a nonvolatile storing section. A write control circuit 34 stores the same data as that held in MTJ elements MTJ1 and MTJ2. In a store operation storing the data held in a slave latch 32 into the MTJ elements MTJ1 and MTJ2, the write control circuit 34 compares the data stored therein with the data held in the slave latch 32 to control whether or not to write the data to the MTJ elements MTJ1 and MTJ2. If the internally stored data coincides with the data held in the slave latch 32, the write control circuit 34 performs control not to write the data to the MTJ elements MTJ1 and MTJ2.

Abstract: The present technique relates to a non-volatile memory circuit ensuring a small size and low power consumption while maintaining stable write. A slave latch is provided in an NVDFF, and magnetoresistive elements are connected to the slave latch. A store operation for writing information stored in the slave latch to the magnetoresistive elements is performed before power interruption, and a restore operation for reading out information stored in the magnetoresistive elements to the slave latch is performed at a time of return. The store operation and the restore operation use different paths between the slave latch and the magnetoresistive element. The present technique is applicable to a non-volatile memory circuit.

Abstract: An objective of this application is to provide a sealant for liquid crystals witch is extremely less apt to contaminate liquid crystals and has high adhesion strength. This application discloses a sealant for liquid crystals comprising as essential ingredients (a) a radiation-curable resin represented by the general formula (1): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a hydrogen atom, a halogen atom, a hydroxyl group, a linear, branch or cyclic monovalent alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms, m represents an integer of 1 to 4, and may be the same or different, R3 represents a hydrogen atom or a methyl group, and the number n of the repeating units is a positive number in the range of 0 to 20; (b) a photopolymerization initiator; and (c) an inorganic filler having an average particle diameter of 3 ?m or less.

Abstract: The present invention relates to a sealant for liquid crystals having extremely low contamination nature to a liquid crystal, excellent coatability and bondability to a substrate, long service life and pot life and high adhesive strength. A sealant for liquid crystals of the present invention is characterized by comprising (a) an epoxy resin represented by general formula (1): (wherein a represents an integer of 2 to 4; n represents 0 to 3 (average value); R represents a divalent hydrocarbon group of 2 to 6 carbon atoms; A represents a polyvalent aromatic group; and G represents a glycidyl group, provided that when n is 0, (a) an epoxy resin represented by general formula (1) is a bisphenol S-type.), (b) a thermo-curing agent, (c) and a filler having average particle diameter of not larger than 3 ?m.

Abstract: An objective of this application is to provide a sealant for liquid crystals witch is extremely less apt to contaminate liquid crystals and has high adhesion strength. This application discloses a sealant for liquid crystals comprising as essential ingredients (a) a radiation-curable resin represented by the general formula (1): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a hydrogen atom, a halogen atom, a hydroxyl group, a linear, branch or cyclic monovalent alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms, m represents an integer of 1 to 4, and may be the same or different, R3 represents a hydrogen atom or a methyl group, and the number n of the repeating units is a positive number in the range of 0 to 20; (b) a photopolymerization initiator; and (c) an inorganic filler having an average particle diameter of 3 ?m or less.

Abstract: The present invention relates to a sealant for liquid crystals having extremely low contamination nature to a liquid crystal, excellent coatability and bondability to a substrate, long service life and pot life and high adhesive strength. A sealant for liquid crystals of the present invention is characterized by comprising (a) an epoxy resin represented by general formula (1): (wherein a represents an integer of 2 to 4; n represents 0 to 3 (average value); R represents a divalent hydrocarbon group of 2 to 6 carbon atoms; A represents a polyvalent aromatic group; and G represents a glycidyl group, provided that when n is 0, (a) an epoxy resin represented by general formula (1) is a bisphenol S-type.), (b) a thermo-curing agent, (c) and a filler having average particle diameter of not larger than 3 ?m.

Abstract: A marking composition comprising an energy ray curing resin, a leuco dye and a color developer both of which are low in solubility in toluene, which composition is capable of forming a vivid black color on irradiation with laser beams, and a laser marking method for forming a clear-cut black-colored mark by using the above composition.