Abstract: Copper plating baths containing a leveling agent that is a reaction product of a compound including a heteroatom chosen from nitrogen, sulfur and a mixture of nitrogen and sulfur, with a polyepoxide compound containing an ether linkage that deposit copper on the surface of an electronic device and in apertures on such substrate are provided. Such plating baths deposit a copper layer on the substrate surface that is substantially planar across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: Copper plating baths containing a leveling agent that is a reaction product of a compound including a heteroatom chosen from nitrogen, sulfur and a mixture of nitrogen and sulfur, with a polyepoxide compound containing an ether linkage that deposit copper on the surface of an electronic device and in apertures on such substrate are provided. Such plating baths deposit a copper layer on the substrate surface that is substantially planar across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.

Abstract: A method for electrolytic copper plating using an electrolytic copper plating solution including a compound containing a structure of —X—S—Y—, wherein X and Y are independently chosen from hydrogen atom, carbon atom, sulfur atom, nitrogen atom, and oxygen atom, and X and Y may be the same only when they are a carbon atom, and by contacting the electrolytic copper plating solution with ozone is disclosed.

Abstract: This invention offers a composite material with improved binding strength and a method for its manufacture. In particular, the invention offers a composite material having metal at the surface of a resin base, obtained by subjecting the surface of a resin base to an ion exchange group introduction treatment, treating the surface of said resin base with liquid containing metal ions, and then reducing said metal ions, where the aforementioned composite material resin is characterized in that the resin base and metal of said composite material are hot-pressed. Said composite material has superior binding strength between resin base and metal relative to composite materials obtained by electroless plating which have inferior binding strength between resin base and metal. Moreover, said composite material is readily manufactured because hot-press methods can be used in the formation of said composite material.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to the electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.

Abstract: A method for electrolytic copper plating using an electrolytic copper plating solution including a compound containing a structure of —X—S—Y—, wherein X and Y are independently chosen from hydrogen atom, carbon atom, sulfur atom, nitrogen atom, and oxygen atom, and X and Y may be the same only when they are a carbon atom, and by contacting the electrolytic copper plating solution with ozone is disclosed.

Abstract: A via filling method that provides superior filling properties and superior planarization of the deposited metal layer is provided. This is achieved by a method having a F/R ratio, the ratio of the electric current densities between the forward electrolysis and the reverse electrolysis, is in the range of 1/1 to 1/10 in a PPR electric current method applied with a cycle wherein the forward electrolysis interval is from 1 to 50 msec and the reverse electrolysis interval is from 0.2 to 5 msec.

Abstract: An electroplating method not that is especially suited for the filling of vias is provided. In this method, a current is applied in a forward method for a set period of time and then reversed for a set period of time. This method utilizes a rest time either before or after or both before and after the reverse current period.

Abstract: A process for electrolytic copper plating, that is suitable for the formation of filled vias without compromising the brightness of the deposit is provided. In this process, copper electroplating is carried out in the presence of a transition metal oxide.

Abstract: This invention offers a composite material with improved binding strength and a method for its manufacture. In particular, the invention offers a composite material having metal at the surface of a resin base, obtained by subjecting the surface of a resin base to an ion exchange group introduction treatment, treating the surface of said resin base with liquid containing metal ions, and then reducing said metal ions, where the aforementioned composite material resin is characterized in that the resin base and metal of said composite material are hot-pressed. Said composite material has superior binding strength between resin base and metal relative to composite materials obtained by electroless plating which have inferior binding strength between resin base and metal. Moreover, said composite material is readily manufactured because hot-press methods can be used in the formation of said composite material.

Abstract: The present invention provides a copper electroplating method using an insoluble anode, including: using an insoluble anode and a copper electroplating solution which contains a compound having a —X—S—Y— structure (where X and Y are each independently selected from the group consisting of a hydrogen atom, a carbon atom, a sulfur atom, a nitrogen atom, and an oxygen atom, and X and Y can be the same only where they are carbon atoms); and using direct current to plate a substrate. By this method, even a certain time period after the initial make-up of the electrolytic bath, stable deposition of the plated metal and formation of a filled via can be achieved, and an MVH can be filled up with the metal with no void left.

Abstract: A process for via filling is provided, wherein after flash plating, a PPR current is applied for a cycle of 1 to 50 msec positive electrolysis time and 0.2 to 5 msec reverse electrolysis time until an F/R ratio representing the ratio of positive electrolysis current density to reverse electrolysis current density is at least 1/0.2 and less than 1/1.

Abstract: A via filling method that provides superior filling properties and superior planarization of the deposited metal layer is provided. This is achieved by a method having a F/R ratio, the ratio of the electric current densities between the forward electrolysis and the reverse electrolysis, is in the range of 1/1 to 1/10 in a PPR electric current method applied with a cycle wherein the forward electrolysis interval is from 1 to 50 msec and the reverse electrolysis interval is from 0.2 to 5 msec.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to said electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.