Abstract: In a double-side polishing apparatus includes at least one work thickness measuring instrument in real time during double-side polishing of the work; an inner circumferential surface defined by the through hole in said one of the upper plate and the lower plate is provided with a metal cylindrical member; and either of: a lower window provided in a lower part of the cylindrical member provided in the upper plate and an upper window provided in an upper part of the cylindrical member provided to cover the upper side of the through hole provided in the upper plate, or an upper window provided in an upper part of the cylindrical member provided in the lower plate and a lower window provided to cover the lower side of the through hole provided in the lower plate.

Abstract: A semiconductor device includes a semiconductor substrate configured to include a first electrode layer, and a first barrier layer provided on the first electrode layer and bonded to a metal layer, and a circuit substrate configured to include a second electrode layer, and a second barrier layer provided on the second electrode layer and bonded to the metal layer, wherein the semiconductor substrate including a semiconductor element, and the circuit substrate are bonded via the metal layer containing Sn, a linear expansion coefficient of the first barrier layer is larger than that of the circuit substrate, and a linear expansion coefficient of the second barrier layer is smaller than that of the circuit substrate.

Abstract: A wiring board includes a wiring layer; a diffusion suppressing layer that covers the wiring layer and suppresses diffusion of a metal component of the wiring layer; a base metal layer that covers the diffusion suppressing layer; and a passivation layer that covers the base metal layer.

Abstract: A wiring board includes a wiring layer; a diffusion suppressing layer that. covers the wiring layer and suppresses diffusion of a metal component of the wiring layer; a base metal layer that covers the diffusion suppressing layer; and a passivation layer that covers the base metal layer.

Abstract: An electronic device includes a substrate and a wiring. The wiring is provided above the substrate and includes a Ni—B layer and a copper layer provided on the Ni—B layer. The Ni—B layer contains 3.2% by weight to 5% by weight of boron.

Abstract: An electronic component includes: a conductor portion containing a first element; a compound layer disposed around the conductor portion and containing a second element and a third element which are different from the first element; and an isolation layer, disposed between the conductor portion and the compound layer and containing a fourth element which is different from the first element, the second element, and the third element, to isolate the first element in the conductor portion from the second element and the third element outside the conductor portion.

Abstract: An electronic apparatus includes: a first substrate; an electrode over the first substrate; a first conductor having a porous structure above the first substrate, the first conductor covering an upper surface and a side surface of the electrode; and an insulator above the first substrate, the insulator covering an upper surface and a side surface of the first conductor, wherein the insulator has an opening that exposes the first conductor.

Abstract: A semiconductor device includes: a wiring board including a first electrode pad on a surface thereof; a circuit board disposed to stand on the wiring board, and including an interconnection connected to the first electrode pad; and a semiconductor package disposed to face the wiring board with the circuit board interposed therebetween, and including a second electrode pad on a surface thereof, the second electrode pad being connected to the interconnection.

Abstract: An electronic apparatus includes: a first substrate; an electrode over the first substrate; a first conductor having a porous structure above the first substrate, the first conductor covering an upper surface and a side surface of the electrode; and an insulator above the first substrate, the insulator covering an upper surface and a side surface of the first conductor, wherein the insulator has an opening that exposes the first conductor.

Abstract: A semiconductor device includes: a wiring board including a first electrode pad on a surface thereof; a circuit board disposed to stand on the wiring board, and including an interconnection connected to the first electrode pad; and a semiconductor package disposed to face the wiring board with the circuit board interposed therebetween, and including a second electrode pad on a surface thereof, the second electrode pad being connected to the interconnection.

Abstract: A semiconductor device includes: a wiring board including a first electrode pad on a surface thereof; a circuit board disposed to stand on the wiring board, and including an interconnection connected to the first electrode pad; and a semiconductor package disposed to face the wiring board with the circuit board interposed therebetween, and including a second electrode pad on a surface thereof, the second electrode pad being connected to the interconnection.

Abstract: A semiconductor device includes: a wiring board including a first electrode pad on a surface thereof; a circuit board disposed to stand on the wiring board, and including an interconnection connected to the first electrode pad; and a semiconductor package disposed to face the wiring board with the circuit board interposed therebetween, and including a second electrode pad on a surface thereof, the second electrode pad being connected to the interconnection.

Abstract: A semiconductor device includes: a wiring board including a first electrode pad on a surface thereof; a circuit board disposed to stand on the wiring board, and including an interconnection connected to the first electrode pad; and a semiconductor package disposed to face the wiring board with the circuit board interposed therebetween, and including a second electrode pad on a surface thereof, the second electrode pad being connected to the interconnection.

Abstract: An electronic device includes a wiring board including a first electrode and a second electrode, a semiconductor device mounted on the wiring board and including a first terminal and a second terminal, an interposer provided between the wiring board and the semiconductor device, the interposer including a conductive pad and a sheet supporting the conductive pad, the conductive pad having a first surface on a side of the wiring board and a second surface on a side of the semiconductor device, a first solder connecting the first electrode positioned outside of an area in which the interposer is disposed with the first terminal positioned outside of the area, a second solder connecting the second electrode positioned inside of the area with the first surface of the conductive pad, and a third solder connecting the second terminal positioned inside of the area with the second surface of the conductive pad.

Abstract: Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.

Abstract: A laser annealing apparatus is provided that is capable of reducing irradiation unevenness of laser light caused by a refraction phenomenon of the laser light due to fluctuation in the temperature of inert gas. The laser annealing apparatus includes a gas supply unit for supplying inert gas G to at least a laser irradiation area of a workpiece, and a gas temperature controller for regulating the temperature of the inert gas G. The gas temperature controller controls the temperature of the inert gas G supplied to the laser irradiation area so as to decrease a temperature difference between the temperature of the inert gas G and the atmospheric temperature of a space (a room R) that is disposed outside the supply area of the inert gas so the temperature controlled inert gas surrounds the optical path of the laser light.

Abstract: An electronic device includes a wiring board; a semiconductor device arranged at an upper side of the wiring board with an electrically conductive member being arranged therebetween; a covering member arranged at an upper side of the semiconductor device; and a supporting member arranged at a lower side of the wiring board, the supporting member having a convex portion facing the wiring board, the supporting member being connected to the covering member and supporting the wiring board at the convex portion.

Abstract: An electronic device includes an electronic component mounted on a substrate; a cooling system for cooling the electronic component; and a fastening structure for fastening the cooling system to the substrate. The fastening structure includes a first magnet provided to one of the substrate and the cooling system, a second magnetic material fixed to the other of the substrate and the cooling system and magnetically coupled with the first magnet, and a magnetic shield that covers a part or all of the first magnet except for a coupling face to be coupled with the second magnetic material.

Abstract: In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

Abstract: It is an object of the present invention to prevent a vehicle door from protruding into a vehicle cabin when a collision load is applied to the door from a lateral side thereof, and to reduce costs that are required for measures to prevent the door from protruding into the vehicle cabin.