Abstract: Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.

Abstract: Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.

Abstract: A high-purity titanium sputtering target having controlled crystal characteristics. The uniform problem of film thickness distribution on a substrate can be solved by adopting the requirements that (a) the average crystal grain diameters at various portions of the sputtering surface of the target are 500 .mu.m or less, preferably 100 .mu.m or less, and their dispersions are within .+-.20%, and (b) the defined orientation content ratios A have dispersions within .+-.20% and (c) a Ti target crystal structure has a recrystallization structure. The problems in connection with particle generation and lowered film forming rate in collimation sputtering can be solved by adopting the requirements that (d) said orientation content ratios A are is 80% or less, preferably 50% or less, and (e) the defined orientation content ratios B are 20% or less, as necessary, in combination with the aforementioned (a) to (c) requirements.

Abstract: A sputtering target assembly composed of a sputtering target and a backing plate with or without an insert or inserts interposed therebetween as necessary characterized by having solid-phase bonded interface accompanied with no appreciable thermal diffusion layer and by said sputtering target substantially maintaining the quality characteristics including metallurgical characteristics and properties that the sputtering target had before it was bonded to the backing plate intact. The sputtering target assembly is obtained by solid-phase bonding the target and backing plate, with or without one or more insert sandwiched therebetween, at a low temperature and a low pressure under a vacuum. The solid-phase bonded interface gives reliable bonds of a bonded area percentage of 100% without non-bonded portions such as pores. The uniformity of microstructure and crystal orientation etc. of a target material is maintained intact with the suppression of crystal grain growth.

Abstract: A sputtering target of a high-purity Al or Al alloy having (1) a target crystal structure as a recrystallization structure and average grain diameters in various portions of 500 .mu.m or less, with dispersions within .+-.15%, and (2) a {200} crystalline orientation content ratio on the sputtering surface of at least 0.35 in various portions of the target, with dispersions within .+-.15%, said {200} crystalline orientation content ratio being defined by the following formula: ##EQU1## where I.sub.{200}, I.sub.{111}, I.sub.{220} and I.sub.{311} are peak strengths for (200), (111), (220) and (311) crystal planes, respectively, as obtained X-ray diffraction method. Simultaneous realization of (1)+(2) is desirable. For these purposes, uniform warm or cold working to a desired final geometry below the recrystallization temperature must be followed by uniform heat treatment throughout the target at the recrystallization temperature of the material to finish the recrystallization.