Abstract: A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater

Abstract: A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater

Abstract: A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater.

Abstract: A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Abstract: Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below. In the general formula (1), R1 represents an alkyl group or an aryl group having 1-17 carbon atoms, and R2 represents an alkyl group having 1-13 carbon atoms.

Abstract: A composition for forming a silica-based coating film includes a siloxane polymer and an alkali metal compound. The siloxane polymer is preferably a hydrolysis-condensation product of a silane compound having a hydrolyzable group. Sodium, lithium, potassium, rubidium, or cesium, or the like is used as the alkali metal of the alkali metal compound. Furthermore, the alkali metal compound is preferably a nitrate, sulfate, carbonate, oxide, chloride, bromide, fluoride, iodide, or hydroxide of the above alkali metal. This composition for forming a silica-based coating film may also include a pore-forming material. At least one material selected from amongst polyalkylene glycols and alkyl-terminated derivatives thereof is used as the pore-forming material.

Abstract: A composition for forming a silica-based coating film includes a siloxane polymer and an alkali metal compound. The siloxane polymer is preferably a hydrolysis-condensation product of a silane compound having a hydrolyzable group. Sodium, lithium, potassium, rubidium, or cesium, or the like is used as the alkali metal of the alkali metal compound. Furthermore, the alkali metal compound is preferably a nitrate, sulfate, carbonate, oxide, chloride, bromide, fluoride, iodide, or hydroxide of the above alkali metal. This composition for forming a silica-based coating film may also include a pore-forming material. At least one material selected from amongst polyalkylene glycols and alkyl-terminated derivatives thereof is used as the pore-forming material.

Abstract: A material for forming an antireflective film that enables a large difference in etching rates to be obtained between a resist pattern and an antireflective film. A composition for forming an antireflective film includes a siloxane polymer containing a light-absorbing compound group.

Abstract: The composition for forming an anti-reflective coating film of the present invention has a hard-volatility and high coating performance. In particular, when the 193 nm ArF excimer laser beam source is applied, the composition exhibits a higher etching property. Therefore, the composition is suitably for forming an anti-reflective coating film with no voids and for a method of forming resist patterns using the composition. The composition for forming an anti-reflective coating film comprising; (A) a hard-volatility light absorbing compound, (B) siloxanepolymer, and (C) a solvent.