Abstract: An absorbent article that improves contact efficiency between a deodorant substance and an odor. The problem is solved by an absorbent article including an absorber and a liquid impervious resin film covering an outside of the absorber, in which a cellulose nanofiber layer is attached directly to a member outside the liquid impervious resin film, and the cellulose nanofiber layer can come into contact with an odor in an atmosphere outside the absorbent article.

Abstract: A switch device includes a plurality of communication ports; a switch unit configured to relay a frame, which has been transmitted from a function unit and to which information including an ID of a VLAN is added, to another function unit via a communication port; and a duplication unit configured to, when the diagnosis device is connected to another switch device, duplicate the frame to be relayed via a designated communication port among the plurality of communication ports, and generate a duplicate frame for diagnosis that is a frame obtained by adding, to a duplicate frame obtained through the duplication, specific information indicating that the duplicate frame for diagnosis should be transmitted to the diagnosis device. The switch unit outputs the duplicate frame for diagnosis generated by the duplication unit from a communication port corresponding to the other switch device.

Abstract: A flexographic printing raw plate including at least a support, a photosensitive resin composition layer, an ink absorbing layer, and an infrared ablation layer sequentially stacked, wherein the ink absorbing layer has a film thickness of 5 ?m or more and 50 ?m or less, the ink absorbing layer comprises polymer particles containing a butadiene skeleton and having a carboxyl group and/or a hydroxy group, and/or polymer particles obtained by polymerizing a monobasic or polybasic acid monomer, and a content of the polymer particles is 20% by mass or more and 95% by mass or less based on 100% by mass of the ink absorbing layer.

Abstract: To obtain a wide stretching range in a waist stretching sheet, a tape-type disposable diaper has a main body including a waist stretching sheet and a fastening tape on a dorsal side portion B. The main body has a folded-back portion in which a side including a portion having a non-stretchable region of the waist stretching sheet is folded back to a center side and fixed.

Abstract: Heating treatment is performed on a semiconductor wafer in an ammonia atmosphere formed in a chamber by light irradiation from halogen lamps and flash lamps. For the formation of the ammonia atmosphere in the chamber, pressure in the chamber is once reduced. The pressure in the chamber is also reduced after the heating treatment of the semiconductor wafer. Light irradiation from the halogen lamps is performed to heat the atmosphere in the chamber before the pressure in the chamber is reduced by exhausting the atmosphere from the chamber. The heating of the atmosphere in the chamber before the pressure reduction activates the thermal motion of gas molecules in the atmosphere and decreases a gas density. As a result, the gas molecules in the chamber are discharged rapidly during the pressure reduction, so that the pressure in the chamber is reduced to a predetermined pressure in a short time.

Abstract: A disposable wearable article including a top sheet having a skin-touching region that is brought into contact with skin of a wearer, wherein the top sheet is made from discontinuous fiber nonwoven fabric having a fineness of 1 to 3 dtex, a basis weight of 10 to 30 g/m2, and a thickness of 0.4 to 1.4 mm, wherein the skin-touching region has a lotion-bearing zone which bears a water-containing hydrophilic lotion, the lotion-bearing zone having a MD dimension of 30 mm or larger and a CD dimension of 5 mm or larger, and wherein an average coefficient of friction MIU of the lotion-bearing zone is 0.2 to 0.4.

Abstract: A detection apparatus according to one aspect of this disclosure includes: two or more housings connectable to each other; a first photodetector connectable to a corresponding one of the two or more housings; and a second photodetector connectable to a corresponding one of the two or more housings. Each of the housings includes a first connecting portion to which the first photodetector is connectable, a second connecting portion to which the second photodetector is connectable, and a third opening facing the first connecting portion. At least one of the housings includes a dichroic mirror placed between a first opening and the third opening. The dichroic mirror allows light having a first wavelength in incident light from the third opening to pass through the dichroic mirror toward the first opening, while the dichroic mirror reflects light having a second wavelength in the incident light toward the second opening.

Abstract: A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

Abstract: A disposable diaper capable of moisturizing the skin of a wearer and suitably maintaining an adhesive force of an end flap portion. A disposable diaper including: an absorber disposed between a liquid pervious top sheet and a liquid impervious back sheet; an end flap portion formed on each side of the absorber in a front-back direction; and a lotion portion extending in the front-back direction at a predetermined interval in a width direction on a body-side surface of the top sheet, wherein in the front-back direction, the lotion portion is disposed in an intermediate portion between a ventral side portion accounting for 20 to 45% of a front-back direction length of the top sheet from a ventral side end of the top sheet and a dorsal side portion accounting for 10 to 35% of the front-back direction length of the top sheet from a dorsal side end of the top sheet.

Abstract: A plurality of flash lamps are disposed on an upper side of a chamber housing a semiconductor wafer and a plurality of LED lamps are disposed on a lower side thereof. A surface of a semiconductor wafer preheated by light irradiation from a plurality of LED lamps is irradiated with a flash of light from a flash lamp. The LED lamps emit light having a wavelength of 900 nm or less. The light radiated from the LED lamps passes through a quartz lower chamber window, and then emitted to the semiconductor wafer. The light with the wavelength of 900 nm or less radiated from the LED lamps is also favorably absorbed by the semiconductor wafer in a low temperature range of 500° C. or less, and is hardly absorbed by the quartz lower chamber window. Thus, the semiconductor wafer can be efficiently heated by the LED lamps.

Abstract: A manufacturing method for a metal member includes irradiating a first region of a surface of the base material, the surface having at least any one of Cu, Al, Sn, Ti, and Fe, as a main component, with a laser beam to melt the first region; generating metal particles from a vapor or plasma of a metal released to a predetermined atmosphere by melting the surface of the base material in the first region, and depositing the metal particles in the first region; irradiating a second region adjacent to the first region with a laser beam to melt the second region; and generating metal particles from a vapor or plasma of a metal released to a predetermined atmosphere by melting the surface of the base material in the second region, and depositing the metal particles in each of the first region and the second region.

Abstract: An absorbent article that improves an outward appearance of an absorbent article by a simple method. A sheet member includes a liquid impervious resin film, and a nonwoven fabric attached to one surface thereof, in which a bonded portion in which the liquid impervious resin film and the nonwoven fabric are bonded through a micro-fibrous cellulose assembly and a non-bonded portion continuously or intermittently provided between bonded portions are alternately repeatedly provided, and unevenness is formed on the nonwoven fabric by the nonwoven fabric expanding in the non-bonded portion and the nonwoven fabric not expanding in the bonded portion.

Abstract: A thermal processing apparatus according to the present invention includes: a support including quartz and being for supporting a substrate from a first side within a chamber; a flash lamp disposed on a second side and being for heating the substrate by irradiating the substrate with a flash of light; a continuous illumination lamp disposed on the second side of the substrate and being for continuously heating the substrate; a light blocking member disposed to surround the substrate in plan view; and a radiation thermometer disposed on the first side of the substrate and being for measuring a temperature of the substrate, wherein the radiation thermometer measures the temperature of the substrate by receiving light at a wavelength capable of being transmitted through the support. Accuracy of measurement of the temperature of the substrate can thereby be increased.

Abstract: A semiconductor wafer held by a susceptor in a chamber is irradiated with halogen light radiated from a plurality of halogen lamps to be heated. A stainless steel block having an opening in a cylindrical shape is provided between the chamber and the halogen lamps. This reduces a distance from a light emitting portion in a light source region in which the plurality of halogen lamps is arranged, throughout the entire circumference of the opening in a cylindrical shape, so that the amount of reflected light from the inner wall surface of the opening toward the peripheral portion of the semiconductor wafer becomes uniform. This causes a uniform increase in illuminance of the peripheral portion of the semiconductor wafer, where temperature tends to decrease, at the time of light irradiation from the halogen lamps, so that in-plane temperature distribution of the semiconductor wafer can be made uniform.

Abstract: To improve the diffusibility of excreted liquid by a simple method, an absorbent article includes a liquid pervious top sheet that includes a portion located on a surface, an absorber that contains a super absorbent polymer provided on a back surface side of the top sheet, and a liquid pervious intermediate sheet provided between the top sheet and the absorber. The top sheet, the intermediate sheet, and the absorber are provided at least in a region from a first position in a crotch portion or in a vicinity of the crotch portion to a second position apart from the first position, and the intermediate sheet has an adhered portion of a cellulose nanofiber assembly continuing over at least the first position and the second position.

Abstract: A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

Abstract: A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

Abstract: Heating treatment is performed on a semiconductor wafer in an ammonia atmosphere formed in a chamber by light irradiation from halogen lamps and flash lamps. For the formation of the ammonia atmosphere in the chamber, pressure in the chamber is once reduced. The pressure in the chamber is also reduced after the heating treatment of the semiconductor wafer. Light irradiation from the halogen lamps is performed to heat the atmosphere in the chamber before the pressure in the chamber is reduced by exhausting the atmosphere from the chamber. The heating of the atmosphere in the chamber before the pressure reduction activates the thermal motion of gas molecules in the atmosphere and decreases a gas density. As a result, the gas molecules in the chamber are discharged rapidly during the pressure reduction, so that the pressure in the chamber is reduced to a predetermined pressure in a short time.

Abstract: A transportation preparation operation for transporting a semiconductor wafer from a treatment chamber is started before a temperature of the semiconductor wafer decreases to a transportable temperature. A gate valve is closed after a treatment on the semiconductor wafer is started, and an operation of transporting the semiconductor wafer into the treatment chamber is completed. A period of time for treating the semiconductor wafer and a period of time for transporting the semiconductor wafer in and out are overlapped with each other, thus a time required for transporting the semiconductor wafer W into and out of the treatment chamber can be reduced.

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.