Patents by Inventor Masashi Nakae
Masashi Nakae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7529021Abstract: A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.Type: GrantFiled: July 31, 2007Date of Patent: May 5, 2009Assignee: The Furukawa Electric Co., Ltd.Inventors: Masashi Nakae, Takeshi Aikiyo, Toshio Kimura
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Patent number: 7408867Abstract: A method of aligning an optical fiber according to the present invention has a first step of aligning an optical fiber by moving the optical fiber and finding a position that maximizes the power of beam outputted from the optical fiber with the use of a power meter, and a second step of moving and aligning the optical fiber in the optical axis direction (direction Z) from the position in which the optical fiber has been as a result of the alignment in the first step in a manner that makes the degree of polarization of two laser beams K1 and K2 equal to or lower than a given level with the use of a polarimeter.Type: GrantFiled: October 4, 2004Date of Patent: August 5, 2008Assignee: The Furukawa Electric Co., Ltd.Inventors: Masashi Nakae, Toshio Kimura
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Publication number: 20080044936Abstract: A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.Type: ApplicationFiled: July 31, 2007Publication date: February 21, 2008Applicant: THE FURUKAWA ELECTRIC CO., LTD.Inventors: Masashi NAKAE, Takeshi Aikiyo, Toshio Kimura
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Patent number: 7259905Abstract: A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.Type: GrantFiled: December 30, 2003Date of Patent: August 21, 2007Assignee: The Furukawa Electric Co., Ltd.Inventors: Masashi Nakae, Takeshi Aikiyo, Toshio Kimura
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Patent number: 7245643Abstract: A semiconductor laser module according to the present invention includes a polarization-synthesizing module having a polarization-synthesizing means configured to polarization synthesize two laser beams and a holder member for holding the polarization-synthesizing means with an approximately cylindrical circumferential surface, and a supporting member for supporting the holder member at least to rotate about an central axis and fixing the holder member at a predetermined position.Type: GrantFiled: December 30, 2003Date of Patent: July 17, 2007Assignee: The Furukawa Electric Co., Ltd.Inventors: Masashi Nakae, Toshio Kimura
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Patent number: 7194014Abstract: A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.Type: GrantFiled: December 31, 2003Date of Patent: March 20, 2007Assignee: The Furukawa Electric Co., Ltd.Inventors: Junji Yoshida, Naoki Tsukiji, Toshio Kimura, Masashi Nakae, Takeshi Aikiyo
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Patent number: 7085440Abstract: A semiconductor laser module includes a polarization direction transforming part which transforms polarization directions of first and second laser beams such that they are orthogonal to each other even if a polarization dependent optical isolator is utilized in the semiconductor laser module. The configuration allows the two laser beams to propagate through the birefringence element to the output port without each splitting into an ordinary ray and an extraordinary ray on entering the birefringence element, and therefore free from decrease of optical power reaching the output port. Thus, high power semiconductor laser modules can be provided.Type: GrantFiled: July 2, 2002Date of Patent: August 1, 2006Assignee: The Furukawa Electric Co., LTDInventors: Toshio Kimura, Masashi Nakae
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Publication number: 20050128924Abstract: A method of aligning an optical fiber according to the present invention has a first step of aligning an optical fiber by moving the optical fiber and finding a position that maximizes the power of beam outputted from the optical fiber with the use of a power meter, and a second step of moving and aligning the optical fiber in the optical axis direction (direction Z) from the position in which the optical fiber has been as a result of the alignment in the first step in a manner that makes the degree of polarization of two laser beams K1 and K2 equal to or lower than a given level with the use of a polarimeter.Type: ApplicationFiled: October 4, 2004Publication date: June 16, 2005Applicant: The FURUKAWA ELECTRIC CO., LTD.Inventors: Masashi Nakae, Toshio Kimura
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Publication number: 20050083568Abstract: A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.Type: ApplicationFiled: December 30, 2003Publication date: April 21, 2005Applicant: The Furukawa Electric Co., Ltd.Inventors: Masashi Nakae, Takeshi Aikiyo, Toshio Kimura
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Publication number: 20040240767Abstract: A semiconductor laser module includes a polarization direction transforming part which transforms polarization directions of first and second laser beams such that they are orthogonal to each other even if a polarization dependent optical isolator is utilized in the semiconductor laser module. The configuration allows the two laser beams to propagate through the birefringence element to the output port without each splitting into an ordinary ray and an extraordinary ray on entering the birefringence element, and therefore free from decrease of optical power reaching the output port. Thus, high power semiconductor laser modules can be provided.Type: ApplicationFiled: June 3, 2004Publication date: December 2, 2004Inventors: Toshio Kimura, Masashi Nakae
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Publication number: 20040240505Abstract: A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.Type: ApplicationFiled: December 31, 2003Publication date: December 2, 2004Applicant: The Furukawa Electric Co., Ltd.Inventors: Junji Yoshida, Naoki Tsukiji, Toshio Kimura, Masashi Nakae, Takeshi Aikiyo
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Publication number: 20040213305Abstract: A semiconductor laser module according to the present invention includes a polarization-synthesizing module having a polarization-synthesizing means configured to polarization synthesize two laser beams and a holder member for holding the polarization-synthesizing means with an approximately cylindrical circumferential surface, and a supporting member for supporting the holder member at least to rotate about an central axis and fixing the holder member at a predetermined position.Type: ApplicationFiled: December 30, 2003Publication date: October 28, 2004Applicant: The Furukawa Electric Co., Ltd.Inventors: Masashi Nakae, Toshio Kimura
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Patent number: 6782028Abstract: A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.Type: GrantFiled: December 17, 2001Date of Patent: August 24, 2004Assignee: The Furukawa Electric Co., Ltd.Inventors: Naoki Tsukiji, Junji Yoshida, Masaki Funabashi, Toshio Kimura, Takeshi Aikiyo, Takeo Shimizu, Toshiro Yamamoto, Tomoaki Toratani, Hiroshi Matsuura, Mieko Konishi, Masashi Nakae
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Patent number: 6765935Abstract: A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.Type: GrantFiled: December 17, 2001Date of Patent: July 20, 2004Assignee: The Furukawa Electric Co., Ltd.Inventors: Toshio Kimura, Masashi Nakae, Takeo Shimizu, Naoki Tsukiji, Junji Yoshida, Masaki Funabashi, Takeshi Aikiyo, Toshiro Yamamoto, Tomoaki Toratani, Hiroshi Matsuura, Mieko Konishi
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Publication number: 20020105984Abstract: A laser beam synthesizing member of a semiconductor laser module used as an optical amplifier that has a prism configured to correct respective optical paths of a plurality of laser beams, a beam synthesizing member configured to synthesize the plurality of laser beams once passed from the prism, and a holder member configured to integrally hold the prism and the beam synthesizing member, and where the beam synthesizing member has a first input part on which a first laser beam is incident, at least one other input part on which an other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.Type: ApplicationFiled: December 17, 2001Publication date: August 8, 2002Applicant: THE FURUKAWA ELECTRIC CO., LTD.Inventors: Toshiro Yamamoto, Tomoaki Toratani, Toshio Kimura, Naoki Tsukiji, Junji Yoshida, Masaki Funabashi, Takeshi Aikiyo, Takeo Shimizu, Hiroshi Matsuura, Mieko Konishi, Masashi Nakae
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Publication number: 20020097766Abstract: A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.Type: ApplicationFiled: December 17, 2001Publication date: July 25, 2002Applicant: THE FURUKAWA ELECTRIC CO., LTD.Inventors: Naoki Tsukiji, Junji Yoshida, Masaki Funabashi, Toshio Kimura, Takeshi Aikiyo, Takeo Shimizu, Toshiro Yamamoto, Tomoaki Toratani, Hiroshi Matsuura, Mieko Konishi, Masashi Nakae
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Publication number: 20020093738Abstract: A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam.Type: ApplicationFiled: December 17, 2001Publication date: July 18, 2002Applicant: THE FURUKAWA ELECTRIC CO., LTD.Inventors: Toshio Kimura, Masashi Nakae, Takeo Shimizu, Naoki Tsukiji, Junji Yoshida, Masaki Funabashi, Takeshi Aikiyo, Toshiro Yamamoto, Tomoaki Toratani, Hiroshi Matsuura, Mieko Konishi