Abstract: The present disclosure provides a negative electrode material that can improve the cycle characteristics of a battery. The negative electrode material according to the present disclosure contains a reduced form of a solid electrolyte material. The solid electrolyte material is denoted by Formula (1): Li?M?X?. Herein, in Formula (1), each of ?, ?, and ? is a value greater than 0, M represents at least one element selected from the group consisting of metal dements except Li and semimetals, and X represents at least one dement selected from the group consisting of F, Cl, Br, and I.

Abstract: A packaging system includes a bag feeding device for forming a packaging bag series having a continuous bag portion partitioned by a side seal portion from a long film and a bag mouth opening/closing device having a conveying path formed between a conveying device for pulling and conveying the packaging bag series with first grips and a guide rail parallel to the conveying path. The movers traveling on the guide rail has second grips for gripping the side seal portion. By controlling and adjusting the distance between one mover and the mover immediately after that, an upper end opening of the bag portion is opened or closed according to various processes of the packaging process.

Abstract: A packaging system includes a bag feeding device for forming a packaging bag series having a continuous bag portion partitioned by a side seal portion from a long film and a bag mouth opening/closing device having a conveying path formed between a conveying device for pulling and conveying the packaging bag series with first grips and a guide rail parallel to the conveying path. The movers traveling on the guide rail has second grips for gripping the side seal portion. By controlling and adjusting the distance between one mover and the mover immediately after that, an upper end opening of the bag portion is opened or closed according to various processes of the packaging process.

Abstract: Provided is a protective semiconductor device detecting a disconnection reliably with secondary cells including for each cell: cell-connecting terminals; a first resistance detecting the voltage of each cell; a comparator detecting whether or not the voltage of each cell is in the reference voltage range; a series circuit composed of a second resistance and a first switch element, and including a control circuit controlling ON/OFF of the switch element, wherein the first switch element connects the second resistance to the connecting terminals by turning ON, while disconnecting it by turning OFF, the control circuit maintains a disconnection test signal ON, while turning ON the plurality of first switch elements sequentially and detecting the disconnection between the cells and the connecting terminals based on the output signal from the comparator corresponding to the first switch element turned ON.

Abstract: A signal transmitting-receiving circuit includes a first circuit including a first MOS transistor having a gate and a drain, a second MOS transistor having a gate and a drain connected to the gate and drain of the first MOS transistor, and a source connected to ground, and a transmitting terminal transmitting a signal connected to the drains of the first and second MOS transistors; and a second circuit including a receiving terminal receiving the signal transmitted from the transmitting terminal of the first circuit connected to the transmitting terminal, a third MOS transistor having a gate connected to the receiving terminal, a drain connected to a reference voltage generator circuit and a source connected to ground, a resistor connected between the third MOS transistor and the reference voltage generator circuit, and an output terminal connected between the resistor and the third MOS transistor.

Abstract: Provided is a protective semiconductor device detecting a disconnection reliably with secondary cells including for each cell: cell-connecting terminals; a first resistance detecting the voltage of each cell; a comparator detecting whether or not the voltage of each cell is in the reference voltage range; a series circuit composed of a second resistance and a first switch element, and including a control circuit controlling ON/OFF of the switch element, wherein the first switch element connects the second resistance to the connecting terminals by turning ON, while disconnecting it by turning OFF, the control circuit maintains a disconnection test signal ON, while turning ON the plurality of first switch elements sequentially and detecting the disconnection between the cells and the connecting terminals based on the output signal from the comparator corresponding to the first switch element turned ON.

Abstract: A charge control circuit for controlling charging of a plurality of batteries includes switching elements respectively connected in parallel to the batteries, and a charge control device for reducing charging current to the respective batteries. The charge control device converts voltages of the respective batteries into multiple converted battery voltages based on a predetermined reference voltage as a reference on the basis of voltages at both ends of the respective batteries, generates an offset battery voltage obtained by adding a predetermined offset voltage to the converted battery voltages, compares each converted battery voltage with the offset battery voltage, and reduces charging current to the corresponding battery by turning on the switching element connected in parallel to the corresponding battery when the each converted battery voltage is higher than the offset voltage.

Abstract: A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.

Abstract: A signal transmitting-receiving circuit includes a first circuit including a first MOS transistor having a gate and a drain, a second MOS transistor having a gate and a drain connected to the gate and drain of the first MOS transistor, and a source connected to ground, and a transmitting terminal transmitting a signal connected to the drains of the first and second MOS transistors; and a second circuit including a receiving terminal receiving the signal transmitted from the transmitting terminal of the first circuit connected to the transmitting terminal, a third MOS transistor having a gate connected to the receiving terminal, a drain connected to a reference voltage generator circuit and a source connected to ground, a resistor connected between the third MOS transistor and the reference voltage generator circuit, and an output terminal connected between the resistor and the third MOS transistor.

Abstract: A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which has via cutout parts located above the silicon cutout parts, is formed in an interlayer insulating film and on the silicon guard ring. A metal wiring guard ring is formed on the via guard ring and the interlayer insulating film. A silicon nitride film is formed on the interlayer insulating film so as to cover the metal wiring guard ring. An interface between the interlayer insulating film and the metal wiring guard ring at the via cutout parts is covered by the silicon nitride film.

Abstract: A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which has via cutout parts located above the silicon cutout parts, is formed in an interlayer insulating film and on the silicon guard ring. A metal wiring guard ring is formed on the via guard ring and the interlayer insulating film. A silicon nitride film is formed on the interlayer insulating film so as to cover the metal wiring guard ring. An interface between the interlayer insulating film and the metal wiring guard ring at the via cutout parts is covered by the silicon nitride film.

Abstract: A semiconductor device includes a semiconductor substrate, a base insulating layer, a silicon fuse, a pair of silicon wires, a silicon guard ring, an insulation coating, a first interlayer insulating layer, a via guard ring, a metal guard ring, a final insulating layer, and a fuse window. The base insulating layer is disposed over the semiconductor substrate. The silicon fuse is disposed on the base insulating layer. The pair of silicon wires is disposed on the base insulating layer. The silicon guard ring is disposed on the base insulating layer. The insulation coating is deposited at least over surfaces of the silicon wires. The first interlayer insulating layer is disposed on the base insulating layer. The final insulating layer is disposed on the interlayer insulating layer. The fuse window is defined above the silicon fuse inside the guard rings.

Abstract: A wavelength conversion device is disclosed. The wavelength conversion device includes at least a fundamental wave light source and an external resonator, where a reflectance Rin of an input coupling element that inputs light from the fundamental wave light source to the external resonator is selected as represented by the equations 1 and 2, when a frequency jitter of the fundamental wave light source is ?fjitter, a resonator length of the external resonator is Lcav, a frequency line width of the external resonator is ??cav, a total internal loss of the external resonator is ?, and a speed of light is c.

Abstract: A wavelength conversion device is disclosed. The wavelength conversion device includes at least a fundamental wave light source and an external resonator, where a reflectance Rin of an input coupling element that inputs light from the fundamental wave light source to the external resonator is selected as represented by the equations 1 and 2, when a frequency jitter of the fundamental wave light source is ?fjitter, a resonator length of the external resonator is Lcav, a frequency line width of the external resonator is ??cav, a total internal loss of the external resonator is ?, and a speed of light is c.

Abstract: A wireless communication system that can perform transmission current control of a handset in accordance with a radio wave situation. The wireless communication system includes a base phone and a handset, in which the base phone includes an RSSI detection section for detecting the RSSI of a carrier wave and the RSSI of an interference wave that are sent from the handset, and a control section for sending a transmission current control command to the handset on the basis of the Cl ratio obtained from the ratio between the RSSI of the carrier wave and the RSSI of the interference wave.

Abstract: A video printer for printing a magnetic pattern of a master tape on a slave tape comprises a read head for reading a control signal printed on the slave tape, a phase shift circuit for shifting a phase of the control signal read by the read head, and a write head disposed downstream of the read head with respect to a running direction of the second tape and for rewriting on the second tape the control signal with the phase shifted by the phase shift circuit.