Abstract: A non-woven fabric body (11) that forms a non-woven fabric (1) is formed by integrating composite polyester fibers (2) and flame-retardant acrylic fibers (3) which serve as the other fibers of the rest. The composite polyester fibers (2) have a core-sheath structure in which a sheath portion (4) is formed of a low melting point polyester and a core portion (5) is formed of a high melting point polyester having a higher melting point than that of the low melting point polyester. The composite polyester fibers (2) are contained in an amount of 15% to 80% by weight in a total of 100% by weight of the non-woven fabric body (11). Further, an apparent density of the non-woven fabric body (11) ((a basis weight of the non-woven fabric body)/(a thickness of the non-woven fabric body)) is 0.005 g/cm3 to 0.040 g/cm3.

Abstract: A high voltage field effect transistor according to the present invention has: a p-type low concentration drain region and a low concentration source region formed on both sides of a channel formation region within a n-type region of a semiconductor substrate; a high concentration drain region formed in the low concentration drain region, an impurity concentration of which is higher than that of the low concentration drain region; a gate insulating film that at least covers a surface of the channel formation region; a field oxide film formed on the low concentration drain region so as to be in contact with an end section of the gate insulating film; a gate electrode formed on said gate insulating film and at least a part of said field oxide film so as to cover an entire channel formation region and an end section of said low concentration drain region; and a non-oxide region of the low concentration drain region, on both sides of which there are the gate electrode and the high concentration drain region, and

Abstract: A high voltage field effect transistor according to the present invention has: a p-type low concentration drain region and a low concentration source region formed on both sides of a channel formation region within a n-type region of a semiconductor substrate; a high concentration drain region formed in the low concentration drain region, an impurity concentration of which is higher than that of the low concentration drain region; a gate insulating film that at least covers a surface of the channel formation region; a field oxide film formed on the low concentration drain region so as to be in contact with an end section of the gate insulating film; a gate electrode formed on said gate insulating film and at least a part of said field oxide film so as to cover an entire channel formation region and an end section of said low concentration drain region; and a non-oxide region of the low concentration drain region, on both sides of which there are the gate electrode and the high concentration drain region, and