Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas.

Abstract: Provided are a system and method for surface condition measurement and analysis to effectively utilize image data photographed when a surface as an object is photographed regularly and continuously. When a surface as an object is sequentially photographed as time passes and the photographed image data is sequentially stored, the sequentially stored images are compared and the presence or absence of image regions among the images that nearly coincide with each other is determined. When there are images with image regions that nearly coincide with each other, a coordinate system having one image as a reference is set, and a position of the other image in the coordinate system is determined. When an image with an undetermined position overlaps with an image with a determined position, including images photographed subsequent thereto, the position of the image is determined.

Abstract: Provided are a liquid-crystal-display protection plate that has a high strength, is produced at a reduced cost, and has a shape including a curved surface; and a method for producing the liquid-crystal-display protection plate. The liquid-crystal-display protection plate is formed of a spinel sintered body. The spinel sintered body has an average grain size of 10 ?m or more and 100 ?m or less. The liquid-crystal-display protection plate has a shape including a curved surface.

Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Abstract: To provide a method for producing a Group III element nitride crystal by growing it on a plane on the ?c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12.

Abstract: The present invention provides a method for producing a Group III nitride crystal that can produce a Group III nitride crystal of high quality with few defects such as crack, dislocation, and the like by vapor phase epitaxy. In order to achieve the above object, the method for producing a Group III nitride crystal of the present invention includes a step of: causing Group III element-containing gas 111a to react with nitrogen-containing gas 203a and 203b to generate a Group III nitride crystal 204, wherein in the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance.

Abstract: A method for manufacturing a group III nitride semiconductor crystal substrate includes providing, as a seed crystal substrate, a group III nitride single crystal grown by a liquid phase growth method, and homoepitaxially growing a group III nitride single crystal by a vapor phase growth method on a principal surface of the seed crystal substrate. The principal surface of the seed crystal substrate is a +c-plane, and the seed crystal substrate has an atomic oxygen concentration of not more than 1×1017 cm?3 in a crystal near the principal surface over an entire in-plane region thereof.

Abstract: Information of plant based on color of a surface of plant is acquired from image data obtained by imaging plant, allowing to acquire information of plant at low cost, compared to chlorophyll meter or spectroscopic analyzer. In crop production like rice plant, fertilization management including fertilizer application management like fertilizer amount determination, or other agricultural works, is supported through a smart phone or the like based on data to be observed, like converted leaf color value is calculated from image data obtained by crop imaging. Camera is connected to smart phone. Converted leaf color value can be obtained from image data obtained by imaging leaf of rice plant by camera. Converted leaf color value is transmitted to management server, for example, amount information of applied fertilizer is required in case where converted leaf color value is less than standard, can be obtained as management information for fertilizer application management.

Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality.

Abstract: To provide a method for producing a Group III element nitride crystal by growing it on a plane on the ?c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12.

Abstract: A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10?5 ?; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.

Abstract: Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level.

Abstract: Service can be offered free of charge and the cost of a skin condition measuring device can be reduced by effectively using data on the occasion of obtaining an analysis result by transmitting measurement data by the skin condition measuring device to a server of a company providing a service of analyzing the measurement data. When a request is made from a contractor client to acquire data registered in a measurement data database, authentication is executed based on a contractor ID input from the contractor client. Additionally, when the measurement data database is searched from a contractor database based on the contractor ID, a search level and an access level are obtained. The contractor client is permitted to search the measurement data database within a range of the search level and the access level.

Abstract: There is provided a method for manufacturing a nitride crystal substrate, including: arranging a plurality of seed crystal substrates made of a nitride crystal in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other; growing a first crystal film using a vapor-phase growth method on a surface of the plurality of seed crystal substrates arranged in the planar appearance, and preparing a combined substrate formed by combining the adjacent seed crystal substrates each other by the first crystal film; growing a second crystal film using a liquid-phase growth method on a main surface of the combined substrate so as to be embedded in a groove that exists at a combined part of the seed crystal substrates, and preparing a substrate for crystal growth having a smoothened main surface; and growing a third crystal film using the vapor-phase growth method, on the smoothed main surface of the substrate for crystal growth.

Abstract: A circle rotator of a motor grader includes a worm, a worm wheel and a shaft. The worm wheel has an inner peripheral portion, an outer peripheral portion enclosing the inner peripheral portion from outside, and a plurality of first clutch discs to be spline-coupled to the inner peripheral surface of the inner peripheral portion. The inner peripheral portion is made of a material harder than a material of which the outer peripheral portion is made.

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.

Abstract: A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas.

Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Abstract: Provided are a system and method for surface condition measurement and analysis to effectively utilize image data photographed when a surface as an object is photographed regularly and continuously. When a surface as an object is sequentially photographed as time passes and the photographed image data is sequentially stored, the sequentially stored images are compared and the presence or absence of image regions among the images that nearly coincide with each other is determined. When there are images with image regions that nearly coincide with each other, a coordinate system having one image as a reference is set, and a position of the other image in the coordinate system is determined. When an image with an undetermined position overlaps with an image with a determined position, including images photographed subsequent thereto, the position of the image is determined.

Abstract: A motor grader includes a frame and a work implement. The frame is box-shaped. The work implement is configured to be supported by the frame. The frame includes a bracket, a first frame part and a second frame part. The bracket has left and right side surfaces with which a lifter guide is formed in an integrated manner. The first frame part is configured to extend forward from a front end part of the bracket and support the work implement. The second frame part is configured to extend rearward from a rear end part of the bracket.