Patents by Inventor Masataka Higashiwaki
Masataka Higashiwaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11563092Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.Type: GrantFiled: April 26, 2018Date of Patent: January 24, 2023Assignees: National Institute of Information and Communications Technology, Tamura Corporation, Novel Crystal Technology, IncInventors: Masataka Higashiwaki, Yoshiaki Nakata, Takafumi Kamimura, Man Hoi Wong, Kohei Sasaki, Daiki Wakimoto
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Patent number: 11264241Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.Type: GrantFiled: July 9, 2018Date of Patent: March 1, 2022Assignees: TAMURA CORPORATION, SICOXS Corporation, National Institute of Information and Commnications TechnologyInventors: Akito Kuramata, Shinya Watanabe, Kohei Sasaki, Kuniaki Yagi, Naoki Hatta, Masataka Higashiwaki, Keita Konishi
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Patent number: 11081598Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering an inner surface of the trench, and a trench MOS gate that is buried in the trench so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes a lower layer on a side of the first semiconductor layer and an upper layer on a side of the anode electrode having a higher donor concentration than the lower layer.Type: GrantFiled: February 27, 2018Date of Patent: August 3, 2021Assignees: TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Kohei Sasaki, Masataka Higashiwaki
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Patent number: 10861945Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.Type: GrantFiled: August 18, 2015Date of Patent: December 8, 2020Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Man Hoi Wong, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 10825935Abstract: A trench MOS-type Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer opposite to the first semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer opposite to the second semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench MOS gate that is embedded in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode.Type: GrantFiled: April 20, 2017Date of Patent: November 3, 2020Assignees: TAMURA CORPORATION, National Institute of Information and Communications TechnologyInventors: Kohei Sasaki, Masataka Higashiwaki
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Publication number: 20200168460Abstract: A semiconductor substrate includes a single crystal Ga2O3-based substrate and a polycrystalline substrate that are bonded to each other. A thickness of the single crystal Ga2O3-based substrate is smaller than a thickness of the polycrystalline substrate, and a fracture toughness value of the polycrystalline substrate is higher than a fracture toughness value of the single crystal Ga2O3-based substrate.Type: ApplicationFiled: July 9, 2018Publication date: May 28, 2020Applicants: TAMURA CORPORATION, SICOXS Corporation, National Institute of Information and Communications TechnologyInventors: Akito KURAMATA, Shinya WATANABE, Kohei SASAKI, Kuniaki YAGI, Naoki HATTA, Masataka HIGASHIWAKI, Keita KONISHI
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Publication number: 20200144377Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.Type: ApplicationFiled: April 26, 2018Publication date: May 7, 2020Applicants: NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Masataka HIGASHIWAKI, Yoshiaki NAKATA, Takafumi KAMIMURA, Man Hoi WONG, Kohei SASAKI, Daiki WAKIMOTO
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Publication number: 20200066921Abstract: A trench MOS Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer, an insulating film covering an inner surface of the trench, and a trench MOS gate that is buried in the trench so as to be covered with the insulating film and is in contact with the anode electrode. The second semiconductor layer includes a lower layer on a side of the first semiconductor layer and an upper layer on a side of the anode electrode having a higher donor concentration than the lower layer.Type: ApplicationFiled: February 27, 2018Publication date: February 27, 2020Applicants: TAMURA CORPORATION, NOVEL CRYSTAL TECHNOLOGY, INC.Inventors: Kohei SASAKI, Masataka HIGASHIWAKI
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Publication number: 20190148563Abstract: A trench MOS-type Schottky diode includes a first semiconductor layer including a Ga2O3-based single crystal, a second semiconductor layer that is a layer laminated on the first semiconductor layer and that includes a Ga2O3-based single crystal and a trench opened on a surface thereof opposite to the first semiconductor layer, an anode electrode formed on the surface of the second semiconductor layer opposite to the first semiconductor layer, a cathode electrode formed on a surface of the first semiconductor layer opposite to the second semiconductor layer, an insulating film covering the inner surface of the trench of the second semiconductor layer, and a trench MOS gate that is embedded in the trench of the second semiconductor layer so as to be covered with the insulating film and is in contact with the anode electrode.Type: ApplicationFiled: April 20, 2017Publication date: May 16, 2019Applicants: TAMURA CORPORATION, National Institute of Information and Communications TechnologyInventors: Kohei SASAKI, Masataka HIGASHIWAKI
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Patent number: 10249767Abstract: A Ga2O3-based semiconductor element includes an undoped ?-Ga2O3 single crystal film disposed on a surface of a ?-Ga2O3 substrate, a source electrode and a drain electrode disposed on a same side of the undoped ?-Ga2O3 single crystal film, a gate electrode disposed on the undoped ?-Ga2O3 single crystal film between the source electrode and the drain electrode, and a region formed in the undoped ?-Ga2O3 single crystal film under the source electrode and the drain electrode and including a controlled dopant concentration.Type: GrantFiled: June 15, 2016Date of Patent: April 2, 2019Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATION TECHNOLOGYInventors: Kohei Sasaki, Masataka Higashiwaki
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Patent number: 10230007Abstract: A semiconductor element includes a base substrate that includes a Ga2O3-based crystal having a thickness of not less than 0.05 ?m and not more than 50 ?m, and an epitaxial layer that includes a Ga2O3-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a Ga2O3-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.Type: GrantFiled: July 24, 2015Date of Patent: March 12, 2019Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGYInventors: Kohei Sasaki, Akito Kuramata, Masataka Higashiwaki
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Patent number: 10199512Abstract: A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga2O3-based single crystal including a first Group IV element and Cl at a concentration of not more than 5×1016 cm?3 and that has an effective donor concentration of not less than 1×1013 and not more than 6.0×1017 cm?3, a second layer that includes a second Ga2O3-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.Type: GrantFiled: March 9, 2016Date of Patent: February 5, 2019Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Kohei Sasaki, Ken Goto, Masataka Higashiwaki, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Publication number: 20180350967Abstract: A semiconductor element includes a Molecular Beam Epitaxy (MBE)-grown channel layer including a ?-Ga2O3 single crystal layer. The MBE-grown channel layer is formed on a ?-Ga2O3 single crystal substrate.Type: ApplicationFiled: July 23, 2018Publication date: December 6, 2018Inventors: Kohei SASAKI, Masataka Higashiwaki
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Publication number: 20180254355Abstract: A high withstand voltage Schottky barrier diode includes a first layer that includes a first Ga2O3-based single crystal including a first Group IV element and Cl at a concentration of not more than 5×1016 cm?3 and that has an effective donor concentration of not less than 1×1013 and not more than 6.0×1017 cm?3, a second layer that includes a second Ga2O3-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.Type: ApplicationFiled: March 9, 2016Publication date: September 6, 2018Applicants: TAMURA CORPORATION, National Institute of Information and Communications Technology, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Kohei SASAKI, Ken GOTO, Masataka HIGASHIWAKI, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Publication number: 20170288061Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, an undoped ?-Ga2O3-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped ?-Ga2O3-based single crystal layer. The undoped ?-Ga2O3-based single crystal layer includes an element isolation region.Type: ApplicationFiled: August 6, 2015Publication date: October 5, 2017Inventors: Kohei SASAKI, Masataka HIGASHIWAKI, Man Hoi WONG
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Publication number: 20170278933Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.Type: ApplicationFiled: August 18, 2015Publication date: September 28, 2017Inventors: Kohei SASAKI, Ken GOTO, Masataka HIGASHIWAKI, Man Hoi WONG, Akinori KOUKITO, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Publication number: 20170213918Abstract: A semiconductor element includes a base substrate that includes a Ga2O3-based crystal having a thickness of not less than 0.05 ?m and not more than 50 ?m, and an epitaxial layer that includes a Ga2O3-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial layer that includes a Ga2O3-based crystal including an n-type dopant, an ion implanted layer that is formed on a surface of the epitaxial layer and includes a higher concentration of n-type dopant than the epitaxial layer, an anode electrode connected to the epitaxial layer, and a cathode electrode connected to the ion implanted layer.Type: ApplicationFiled: July 24, 2015Publication date: July 27, 2017Applicants: TAMURA CORPORATION, National Institute of Information and Communications TechnologyInventors: Kohei SASAKI, Akito KURAMATA, Masataka HIGASHIWAKI
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Patent number: 9611567Abstract: Provided is a method for controlling a donor concentration in a Ga2O3-based single crystal body. In addition, an ohmic contact having a low resistance is formed between a Ga2O3-based single crystal body and an electrode. A donor concentration in a Ga2O3-based single crystal body is controlled by a method which includes a step wherein Si, which serves as a donor impurity, is introduced into the Ga2O3-based single crystal body by an ion implantation method at an implantation concentration of 1×1020 cm?3 or less, so that a donor impurity implanted region is formed in the Ga2O3-based single crystal body, the donor impurity implanted region having a higher donor impurity concentration than the regions into which Si is not implanted, and a step wherein Si in the donor impurity implanted region is activated by annealing, so that a high donor concentration region is formed.Type: GrantFiled: February 25, 2014Date of Patent: April 4, 2017Assignees: TAMURA CORPORATION, NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGYInventors: Kohei Sasaki, Masataka Higashiwaki
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Publication number: 20160365418Abstract: A Ga2O3-based semiconductor element includes a ?-Ga2O3 substrate including a first conductivity type, a first ?-Ga2O3 single crystal film formed on the ?-Ga2O3 substrate, a second ?-Ga2O3 single crystal film including a second conductivity type formed on the first ?-Ga2O3 single crystal film, a source electrode formed on the second ?-Ga2O3 single crystal film, a drain electrode formed on a surface of the ?-Ga2O3 substrate opposite to the first ?-Ga2O3 single crystal film, and a gate electrode formed via a gate insulating film in a trench formed in the second ?-Ga2O3 single crystal film.Type: ApplicationFiled: August 29, 2016Publication date: December 15, 2016Inventors: Kohei Sasaki, Masataka Higashiwaki
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Publication number: 20160300953Abstract: A Ga2O3-based semiconductor element includes an undoped ?-Ga2O3 single crystal film disposed on a surface of a ?-Ga2O3 substrate, a source electrode and a drain electrode disposed on a same side of the undoped ?-Ga2O3 single crystal film, a gate electrode disposed on the undoped ?-Ga2O3 single crystal film between the source electrode and the drain electrode, and a region formed in the undoped ?-Ga2O3 single crystal film under the source electrode and the drain electrode and including a controlled dopant concentration.Type: ApplicationFiled: June 15, 2016Publication date: October 13, 2016Inventors: Kohei Sasaki, Masataka Higashiwaki