Abstract: A battery cooling device is mounted on a vehicle and includes a thermosiphon type battery cooling circuit, a temperature control device, and an electronic control unit. The electronic control unit executes, after a circulation stop condition is satisfied, vapor phase temperature rise control for controlling the temperature control device and raising a temperature of a vapor phase side in the battery cooling circuit such that a liquid surface level of a battery cooling refrigerant reaches a level at which circulation of the battery cooling refrigerant is able to be started when the circulation of the battery cooling refrigerant is not started and the liquid surface level is not at the level at which the circulation is able to be started.

Abstract: A ferrule fixing member includes a fixing member configured to fix a ferrule to hold an optical fiber to a retaining member including a retaining hole to insert the ferrule, a locked portion configured to be locked to a locking portion formed on the retaining member and to be restricted from moving, with respect to the retaining member, in an insertion direction of the ferrule and in a direction orthogonal to the insertion direction, and a main body configured to elastically press the ferrule toward the bottom of the retaining hole by elastic deformation thereof.

Abstract: A connector supporting structure includes a substrate, a connector mounted on the substrate, and a casing covering at least a portion of the substrate and supporting the connector. The casing includes an opening to expose a part of the connector from an inside of the casing to an outside. Side surfaces of the connector are pressed by inner surfaces of the opening.

Abstract: A photoelectric conversion module includes a substrate, a photoelectric conversion element optically coupled to an optical fiber, and a conductor pattern that is provided on a surface of the substrate and includes an electrode pattern mounting the photoelectric conversion element and a restriction pattern for restricting a position of the optical fiber.

Abstract: A ferrule fixing member includes a fixing member configured to fix a ferrule to hold an optical fiber to a retaining member including a retaining hole to insert the ferrule, a locked portion configured to be locked to a locking portion formed on the retaining member and to be restricted from moving, with respect to the retaining member, in an insertion direction of the ferrule and in a direction orthogonal to the insertion direction, and a main body configured to elastically press the ferrule toward the bottom of the retaining hole by elastic deformation thereof.

Abstract: A connector supporting structure includes a substrate, a connector mounted on the substrate, and a casing covering at least a portion of the substrate and supporting the connector. The casing includes an opening to expose a part of the connector from an inside of the casing to an outside. Side surfaces of the connector are pressed by inner surfaces of the opening.

Abstract: A photoelectric conversion module includes a substrate, a photoelectric conversion element optically coupled to an optical fiber, and a conductor pattern that is provided on a surface of the substrate and includes an electrode pattern mounting the photoelectric conversion element and a restriction pattern for restricting a position of the optical fiber.

Abstract: The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.

Abstract: The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.