Abstract: When performing the threading to the looper by one-touch operation, the abnormal changeover to the stitch forming state of the looper threading/stitch forming changeover mechanism during the gas supply operation of the gas supply pump is prohibited.

Abstract: In the gaming machine, an effect producing unit is disposed behind the opened door which protrudes laterally outside the side face plane of the cabinet. The effect producing unit is disposed in the space between the cabinets of adjacent gaming machines so that the space can be efficiently utilized. In addition, the effects of the gaming machine can be enhanced since the effect producing unit produces the attractive effects to a game.

Abstract: A threading to a looper is performed with one-touch operation. A looper threading/sewing changeover mechanism 30 including a push button 33 for a pressing operation of a push button shaft 32 that a control pin 31 is protruded and provided, a control groove cam 38 which includes a first control groove cam portion 34—a fourth control groove cam portion 37 which receive the control pin, a connecting movement plate 40 which supports a thread guide portion and which is elastically repelled toward a threading state that a thread guide outlet of the thread guide portion contacts to a looper thread inlet of the looper by a first spring 39, and a connecting positioning plate 82 which rotates together with a main shaft 2 integrally and has a peripheral surface 80 that a tip portion 41 of the push button shaft contacts and has a notch portion 81 that the tip portion of the push button shaft is fitted is provided.

Abstract: According to one embodiment, a method for manufacturing a liquid crystal display device includes a step of forming guide patterns with a pair of frame-like projections configured to allow a seal material to be coated on one substrate of a pair of substrates in a frame form.

Abstract: Pressurized gas for carrying looper thread by gas is generated by gas supply pump operated by changing over a sewing-machine motor, which drives stitch forming device, looper threading is performed through loopers by one-touch operation. Gas carrying threading device of sewing machine, comprising: looper thread introduction mechanism inserts looper thread guided to loopers; hollow looper thread guide extends from looper thread introduction mechanism to looper thread inlets and has looper thread guide outlets; gas supply pump for performing looper threading by carrying looper thread by gas from looper thread introduction area through hollow looper thread guide to looper thread loop-taker point outlets; clutch for transmitting power from sewing machine motor M to drive shaft which drives stitch forming device including loopers at time of stitch formation or to gas supply pump at time of looper threading.

Abstract: A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese.

Abstract: A illumination device comprises a transparent member in which a lenticular lens of a cylindrical shape is disposed in a longitudinal direction; and light emitting members disposed in a vertical direction at prescribed intervals inside the transparent member; in which a visual illusion of existence of light emitting rings, respectively arrayed in a horizontal direction and respectively disposed in a vertical direction inside the transparent member, is created by light emitted from the various light emitting members.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.

Abstract: In the gaming machine, an effect producing unit is disposed behind the opened door which protrudes laterally outside the side face plane of the cabinet. The effect producing unit is disposed in the space between the cabinets of adjacent gaming machines so that the space can be efficiently utilized. In addition, the effects of the gaming machine can be enhanced since the effect producing unit produces the attractive effects to a game.

Abstract: A illumination device comprises a transparent member in which a lenticular lens of a cylindrical shape is disposed in a longitudinal direction; and light emitting members disposed in a vertical direction at prescribed intervals inside the transparent member; in which a visual illusion of existence of light emitting rings, respectively arrayed in a horizontal direction and respectively disposed in a vertical direction inside the transparent member, is created by light emitted from the various light emitting members.

Abstract: A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungsten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienylmolybdenum dihydride, a bismethylcyclopentadienylmolybdenum dihydride, a bisethylcyclopentadienylmolybdenum dihydride, and a bisisopropylcyclopentadienylmolybdenum dihydride.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminoditungsten, a hexaethylmethylaminoditungsten, and a hexadiethylaminoditungsten.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.

Abstract: A high-quality insulating film is provided, of which a dielectric constant is lower than that of the conventional SiO2, and in which no leak current exceeding 10?8 A/cm2 occurs at the time of a voltage of 20 V.

Abstract: A technique capable of forming an NiSi film having excellent characteristics, which TiSi2 or CoSi2 produced thus far is not able to assume, without damaging a substrate is provided. A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF3)4.

Abstract: A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: General Formula [I] where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.

Abstract: A technique is provided of creating high-purity amorphous gate oxides film through a CVD process. In the technique of creating Hf—Si oxide films through the chemical vapor deposition process, Si(OR)4 and Hf(NR?R?)4 are used.

Abstract: In a pipe rack forming method, in a state of holding a pipe forming body by a holding portion in a holding metal mold, at a time of pressing a flat surface portion of the pipe forming body by tooth bottom forming surfaces of respective stages of tooth profile portions in a tooth profile metal mold, the structure is made such as to sequentially employ the tooth profile portions in which a tooth bottom height applied to the flat surface portion is reduced in sequence for the tooth profile portions in the tooth profile metal mold, repeatedly pressing and moving forward and backward mandrels having the same size to an inner periphery of the pipe forming body every time when the respective stages of tooth profile portions in the tooth profile metal mold press the flat surface portion, and forming a rack tooth having a final tooth profile.