Abstract: An edge control device (10) includes: an acquisition unit (15a) configured to acquire information about switching of an edge router accommodating a user's terminal; an instruction unit (15d) configured to instruct a dynamic host configuration protocol (DHCP) server to induce re-acquisition of an internet protocol (IP) address by the user's terminal on the basis of the information about edge router switching acquired by the acquisition unit (15a); and a receiving unit (15e) configured to receive, from a DHCP server, a notification that induction of IP address reacquisition is completed.

Abstract: A common control unit (141A) acquires a configuration input request to a communication device accommodating a user using a network. An individual control unit (142A) identifies a variable group necessary for a command to execute the configuration input based on request content of the configuration input received by the common control unit (141A) and a type of communication device and transmits the identified variable group to the common control unit (141A). A command execution unit (143A) acquires the variable group identified by the individual control unit (141A) from the common control unit (141A), generates a command based on the acquired variable group, and executes the generated command.

Abstract: The present invention provides a method for producing a cell culture for promoting angiogenesis or axon outgrowth, particularly for the treatment of a cerebrovascular disease, an ischemic cardiac disease or traumatic brain injury and spinal cord injury, which comprises culturing a cell population containing microglia and/or monocytes under conditions of low oxygen concentration and/or low sugar concentration to produce the culture, a cell preparation obtained by the method, and a method for treating a cerebrovascular disease, an ischemic cardiac disease or traumatic cerebrospinal neuropathy by using the cell preparation.

Abstract: Provided is an electronic clock including: a power generator; a secondary battery, which is to be charged with electric power generated by the power generator; a balance information transmitter configured to transmit, to a computer, balance information relating to a transition of a power generation amount or a charging balance of the secondary battery; a connection time period setting module configured to set a connection time period of a connection with the computer based on the balance information; and a communication controller configured to control a start and an end of communication to/from the computer based on the connection time period.

Abstract: The present invention provides a method for producing a cell culture for promoting angiogenesis or axon outgrowth, particularly for the treatment of a cerebrovascular disease, an ischemic cardiac disease or traumatic brain injury and spinal cord injury, which comprises culturing a cell population containing microglia and/or monocytes under conditions of low oxygen concentration and/or low sugar concentration to produce the culture, a cell preparation obtained by the method, and a method for treating a cerebrovascular disease, an ischemic cardiac disease or traumatic cerebrospinal neuropathy by using the cell preparation.

Abstract: Provided is an electronic clock including: a power generator; a secondary battery, which is to be charged with electric power generated by the power generator; a balance information transmitter configured to transmit, to a computer, balance information relating to a transition of a power generation amount or a charging balance of the secondary battery; a connection time period setting module configured to set a connection time period of a connection with the computer based on the balance information; and a communication controller configured to control a start and an end of communication to/from the computer based on the connection time period.

Abstract: A sheet metal factory processing system includes a production manager which generates a processing schedule for multiple units each including at least one material sheet, to manage the processing schedule on a per-unit basis. The processing schedule is generated based on sheet processing data obtained by allocating parts to be blanked from the material sheets according to a manufacturing designation. The sheet metal factory processing system also includes a sheet metal factory processing installation which is connected to the production manager through a communication network. The sheet metal factory processing installation receives the generated processing schedule from the production manager and executes the received processing schedule.

Abstract: A paper sheet carrying apparatus is provided that can remove a sheet remained in a path due to paper jam, etc. using a simple mechanism if a sheet remains in any one of two sheet paths or straddles both paths. A sheet path of a first unit is linked to that of a second unit by a linking device and a control mechanism is included that sends to the device and discharges a sheet stopped carrying from the path of the first unit to that of the second unit. When a sheet exists in the path of the second unit, it is carried in opposite direction to the linking device. When a sheet straddles both paths of the first and second units, it is carried to the linking device concurrently in forward direction in the path of the first unit and in opposite in that of the second unit.

Abstract: A paper sheet carrying apparatus is provided that can remove a sheet remained in a path due to paper jam, etc. using a simple mechanism if a sheet remains in any one of two sheet paths or straddles both paths. A sheet path of a first unit is linked to that of a second unit by a linking device and a control mechanism is included that sends to the device and discharges a sheet stopped carrying from the path of the first unit to that of the second unit. When a sheet exists in the path of the second unit, it is carried in opposite direction to the linking device. When a sheet straddles both paths of the first and second units, it is carried to the linking device concurrently in forward direction in the path of the first unit and in opposite in that of the second unit.

Abstract: A sheet metal factory processing system includes a production management apparatus which generates a processing schedule based on a manufacturing designation. The processing schedule is managed in each unit of material sheets. The sheet metal factory processing system also includes a sheet metal factory processing installation which is mutually connected to the production management apparatus through a communication network to execute the processing schedule received from the production management apparatus.

Abstract: A sheet metal factory processing system includes a production manager which generates a processing schedule for multiple units each including at least one material sheet, to manage the processing schedule on a per-unit basis. The processing schedule is generated based on sheet processing data obtained by allocating parts to be blanked from the material sheets according to a manufacturing designation. The sheet metal factory processing system also includes a sheet metal factory processing installation which is connected to the production manager through a communication network. The sheet metal factory processing installation receives the generated processing schedule from the production manager and executes the received processing schedule.

Abstract: A sheet metal factory processing system includes a production management apparatus which generates a processing schedule based on a manufacturing designation. The processing schedule is managed in each unit of material sheets. The sheet metal factory processing system also includes a sheet metal factory processing installation which is mutually connected to the production management apparatus through a communication network to execute the processing schedule received from the production management apparatus.

Abstract: A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode and part of the upper surface of a semiconductor substrate. Since a second nitride sidewall is formed to cover the first nitride sidewall and the pad oxide film, a self-aligned contact hole can be formed by etching. As a result, a semiconductor device with a highly reliable self-aligned contact can be obtained.

Abstract: A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode and part of the upper surface of a semiconductor substrate. Since a second nitride sidewall is formed to cover the first nitride sidewall and the pad oxide film, a self-aligned contact hole can be formed by etching. As a result, a semiconductor device with a highly reliable self-aligned contact can be obtained.

Abstract: A gate electrode is made up of a lower electrode of polysilicon and an upper electrode including a low-resistance film. A nitride sidewall is formed to cover at least the side faces of an insulator cap and the upper electrode. A pad oxide film is formed to cover at least part of the side faces of the lower electrode and part of the upper surface of a semiconductor substrate. Since a second nitride sidewall is formed to cover the first nitride sidewall and the pad oxide film, a self-aligned contact hole can be formed by etching. As a result, a semiconductor device with a highly reliable self-aligned contact can be obtained.

Abstract: After forming a polysilicon film to be used as a gate electrode on a semiconductor substrate of silicon, an insulating thin film is deposited on the polysilicon film. Impurity ions are implanted into the polysilicon film through the insulating thin film, so as to form an amorphous layer on the surface of the polysilicon film. After removing the insulating thin film existing on the polysilicon film, a metal film is deposited on the amorphous layer. A reaction is caused between the amorphous layer and the metal film through annealing, so as to form a metal silicide layer on the surface of the polysilicon film.

Abstract: A slider of the punch carry out unit is moved in the X-axis direction adjacent a punching section of the punch press machine before or after a plate material is punched into a punched product by a punch press machine. At the same time, a gravity center and a shape of the punched product are calculated and recognized on the basis of the manufacturing data. On the basis of the obtained gravity center and the shape of the punched product, the gravity center of the punched product is moved under the lift arm by the X- and Y-axis locating mechanism. Vacuum pads located just over the punched product are selected or discriminated. Then, the lift arm is lowered and the punched product is held by actuating only the discriminated vacuum pads. During this lift motion, it is preferable to bend one end of the punched product slightly upward to easily separate the punched product from the remaining flat plate material.

Abstract: A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. First connection holes are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer is formed in a region including at least the first connection holes and is composed of three layers by sequentially laminating a barrier metal film, an aluminum alloy film, and an anti-reflection film. A second interlayer dielectric film layer is formed on the first conductive film layer and is composed of a lower layer of silicon oxide film, an intermediate layer of silicon oxide film made of inorganic silica or organic silica, and a upper layer of silicon oxide film. Specified positions of the second interlayer dielectric film layer are selectively removed to form second connection holes. A second conductive film layer is formed thereon and is composed of two layers of refractory metal film in the bottom layer and aluminum alloy film in the top layer.

Abstract: A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. The first interlayer dielectric film is made of a BPSG film formed by the method of atmospheric pressure chemical vapor deposition. First connection holes are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer is formed in a region including at least the first connection holes. The first conductive film layer is composed of three layers by sequentially laminating a barrier metal film, an aluminum alloy film, and an anti-reflection film. On the first conductive film layer formed in a specified pattern, a second interlayer dielectric film layer is formed. The second interlayer dielectric film layer is composed of a lower layer of silicon oxide film, an intermediate layer of silicon oxide film made of inorganic silica or organic silica, and an upper layer of silicon oxide film. Specified positions of the second interlayer dielectric film layer are selectively removed.