Abstract: A pump housing of an oil pump includes a suction port that supplies oil to a pump room, a discharge port that discharges oil from the pump room, and a seal portion that suppresses leakage of oil from the pump room to outside of the pump room. A shaft of the oil pump includes a small diameter portion and a large diameter portion having different diameters, the small diameter portion is connected to the inner rotor, and the shaft and the inner rotor integrally rotate. The seal portion is in contact with a side surface of the inner rotor extending in a diameter direction of the shaft, and also extends to a region in the diameter direction on an inner side smaller than the large diameter portion in the diameter direction.

Abstract: A pump housing of an oil pump includes a suction port that supplies oil to a pump room, a discharge port that discharges oil from the pump room, and a seal portion that suppresses leakage of oil from the pump room to outside of the pump room. A shaft of the oil pump includes a small diameter portion and a large diameter portion having different diameters, the small diameter portion is connected to the inner rotor, and the shaft and the inner rotor integrally rotate. The seal portion is in contact with a side surface of the inner rotor extending in a diameter direction of the shaft, and also extends to a region in the diameter direction on an inner side smaller than the large diameter portion in the diameter direction.

Abstract: A semiconductor device includes: a gate electrode disposed in the inside of a trench via a gate insulating film; a shield electrode positioned between the gate electrode and a bottom of the trench; an electric insulating region expanding between the gate electrode and the shield electrode, and further expanding along a side wall and the bottom of the trench so as to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an n+-type source region, and electrically connected to the shield electrode on both end portions of the trench as viewed in a plan view, wherein the shield electrode has high resistance regions positioned at both end portions of the trench as viewed in a plan view, and a low resistance region positioned at a position sandwiched by the high resistance regions.

Abstract: Provided is a chemical conversion treatment agent that has a small impact on the environment and can ensure good post-coating corrosion resistance regardless of the target of treatment. A chemical conversion treatment agent including: at least one type (A) of element selected from the group consisting of zirconium, titanium, and hafnium; at least one type (B) of substance selected from the group consisting of amino group-including silane coupling agents, hydrolysates thereof, and polymers thereof; fluorine (C); and a cationic urethane resin (D). Preferably, the content of (A) is 20-10000 mass ppm in total in terms of metals, and the pH is 1.5-6.5.

Abstract: Provided is a coating pre-treatment method that does not limit the coating method, has a small impact on the environment, and can ensure good post-coating corrosion resistance in a hot-rolled steel sheet. A coating pre-treatment method in which a hot-rolled steel sheet is treated with a chemical conversion treatment agent to form a chemical conversion coating film, wherein the chemical conversion treatment agent includes at least one type (A) of element selected from the group consisting of zirconium, titanium, and hafnium, at least one type (B) of substance selected from the group consisting of amino group-including silane coupling agents, hydrolysates thereof, and polymers thereof, fluorine (C), and a cationic urethane resin (D), and the content of (A) is 20-600 mass ppm in total in terms of metals, and the pH is 3.5-5.5.

Abstract: The present invention relates to a pressure sensitive adhesive sheet containing, laminated in this order, a supporting substrate, a pressure sensitive adhesive layer (X), a continuous void-containing layer including a composition containing silica particles, and a pressure sensitive adhesive layer (Y), the continuous void-containing layer having a mass concentration of the silica particles of more than 60% and 100% or less.

Abstract: The present invention relates to a pressure sensitive adhesive sheet containing, laminated in this order, a supporting substrate, a pressure sensitive adhesive layer (X), a continuous void-containing layer including a composition containing fine particles (excepting silica), and a pressure sensitive adhesive layer (Y), the continuous void-containing layer having a mass concentration of the fine particles of from 45 to 100%.

Abstract: Provided is a semiconductor apparatus includes: a gate electrode disposed inside a trench and opposedly facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode disposed inside the trench and positioned between the gate electrode and a bottom of the trench; an electric insulating region disposed inside the trench, the electric insulating region expanding between the gate electrode and the shield electrode, and further expanding along the side wall and the bottom of the trench so as to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an n+ type source region and the shield electrode, wherein the shield electrode has a high resistance region positioned on an n+ drain region side, and a low resistance region positioned on a gate electrode side.

Abstract: A semiconductor apparatus includes: a gate electrode in a trench and facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode in the trench and between the gate electrode and a bottom of the trench; an electric insulating region in the trench, the electric insulating region extending between the gate electrode and the shield electrode, and further extending along the side wall and the bottom of the trench to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an n+ type source region and the shield electrode. The shield electrode has high resistance regions at positions where the high resistance regions face the side walls of the trench, and a low resistance region at a position where the low resistance region is sandwiched between the high resistance regions.

Abstract: A semiconductor apparatus includes: a gate electrode in a trench and facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode in the trench and between the gate electrode and a bottom of the trench; an electric insulating region in the trench, the electric insulating region extending between the gate electrode and the shield electrode, and further extending along the side wall and the bottom of the trench to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an n+ type source region and the shield electrode. The shield electrode has high resistance regions at positions where the high resistance regions face the side walls of the trench, and a low resistance region at a position where the low resistance region is sandwiched between the high resistance regions.

Abstract: Provided is a semiconductor apparatus includes: a gate electrode disposed inside a trench and opposedly facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode disposed inside the trench and positioned between the gate electrode and a bottom of the trench; an electric insulating region disposed inside the trench, the electric insulating region expanding between the gate electrode and the shield electrode, and further expanding along the side wall and the bottom of the trench so as to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an n+ type source region and the shield electrode, wherein the shield electrode has a high resistance region positioned on an n+ drain region side, and a low resistance region positioned on a gate electrode side.

Abstract: The present invention relates to a pressure sensitive adhesive sheet containing, laminated in this order, a supporting substrate, a pressure sensitive adhesive layer (X), a continuous void-containing layer including a composition containing fine particles (excepting silica), and a pressure sensitive adhesive layer (Y), the continuous void-containing layer having a mass concentration of the fine particles of from 45 to 100%.

Abstract: The present invention relates to a pressure sensitive adhesive sheet containing, laminated in this order, a supporting substrate, a pressure sensitive adhesive layer (X), a continuous void-containing layer including a composition containing silica particles, and a pressure sensitive adhesive layer (Y), the continuous void-containing layer having a mass concentration of the silica particles of more than 60% and 100% or less.

Abstract: Provided is an optical fiber characteristics measurement device that is provided with: a light source for emitting laser light modulated by a specified modulation frequency; an incident means for receiving the laser light from the light source as continuous light and pulse light from one end and the other end of an optical fiber, respectively; and a light detector for detecting light emitted from the optical fiber, the optical fiber characteristics measurement device measuring the characteristics of the optical fiber using the detection results of the light detector, wherein the optical fiber characteristics measurement device is characterized in being provided with a synchronous detector that extracts, from among the detection signals output from the light detector, detection signals obtained by detecting the light in the vicinity of a measurement point set in the optical fiber, and synchronously detects the extracted detection signals using a synchronization signal having a specified period.

Abstract: Provided is an optical fiber characteristics measurement device that is provided with: a light source for emitting laser light modulated by a specified modulation frequency; an incident means for receiving the laser light from the light source as continuous light and pulse light from one end and the other end of an optical fiber, respectively; and a light detector for detecting light emitted from the optical fiber, the optical fiber characteristics measurement device measuring the characteristics of the optical fiber using the detection results of the light detector, wherein the optical fiber characteristics measurement device is characterized in being provided with a synchronous detector that extracts, from among the detection signals output from the light detector, detection signals obtained by detecting the light in the vicinity of a measurement point set in the optical fiber, and synchronously detects the extracted detection signals using a synchronization signal having a specified period.

Abstract: A condenser lens is incorporated into the end portion of a magnetic field measuring apparatus including a magneto-optical crystal. Alternatively, the end portion of the magnetic field measuring device includes an optical fiber having a core diameter smaller than that of a normal single-mode optical fiber.

Abstract: A condenser lens is incorporated into the end portion of a magnetic field measuring apparatus including a magneto-optical crystal. Alternatively, the end portion of the magnetic field measuring device includes an optical fiber having a core diameter smaller than that of a normal single-mode optical fiber.

Abstract: A condenser lens is incorporated into the end portion of a magnetic field measuring apparatus including a magneto-optical crystal. Alternatively, the end portion of the magnetic field measuring device includes an optical fiber having a core diameter smaller than that of a normal single-mode optical fiber.

Abstract: A method for manufacturing a semiconductor device comprises evaporating phosphorus on a silicon substrate to form a thin phosphorus layer and growing gallium phosphide on the substrate having the thin phosphorus layer, heterojunction being defined between the substrate and the semiconductor layer only in the region where the thin film had been formed prior to the growth of gallium phosphide.