Abstract: A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.

Abstract: A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.

Abstract: A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.

Abstract: Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C4F6 gas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.

Abstract: Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter etching, a process “b” of exposing a workpiece to plasma of a first gas containing halogen elements after the process “a” of etching of the film, a process “c” of exposing the workpiece to plasma of a second gas containing carbons after the process “b” of exposing the workpiece to the plasma of the first gas, and a process “d” of exposing the workpiece to plasma of a third gas containing a noble gas after the process “c” of exposing the workpiece to the plasma of the second gas. In the method, a temperature of a placement table on which the workpiece is placed is set to a first temperature of 10° C. or less in the process “a”, process “b” and process “c”.

Abstract: A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.

Abstract: Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter etching, a process “b” of exposing a workpiece to plasma of a first gas containing halogen elements after the process “a” of etching of the film, a process “c” of exposing the workpiece to plasma of a second gas containing carbons after the process “b” of exposing the workpiece to the plasma of the first gas, and a process “d” of exposing the workpiece to plasma of a third gas containing a noble gas after the process “c” of exposing the workpiece to the plasma of the second gas. In the method, a temperature of a placement table on which the workpiece is placed is set to a first temperature of 10° C. or less in the process “a”, process “b” and process “c”.

Abstract: A disclosed mask pattern forming method includes isotropically coating a surface of a resist pattern array having a predetermined line width with a silicon oxide film, embedding a gap in the resist pattern array coated by the silicon oxide film with a carbon film, removing the carbon film from the upper portion and etching back the carbon film while leaving the carbon film within the gap in any order, removing the remaining carbon film and etching back the upper portion of the resist pattern array to have a predetermined film thickness in any order, and forming a first mask pattern array which has a center portion having a predetermined width and film sidewall portions sandwiching the predetermined width, and arranged interposing a space width substantially the same as the predetermined line width with an asking process provided to the resist pattern array exposed from the removed silicon oxide film.

Abstract: A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds.

Abstract: A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.

Abstract: A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.

Abstract: A substrate processing method includes performing a deposition process of depositing a thin film on the substrate while depressurizing the inside of the processing chamber and introducing the gas thereinto; and, while the deposition process is being performed, irradiating light, which is transmitted through a monitoring window installed at the processing chamber, toward the inside of the processing chamber through the monitoring window, and monitoring a reflection light intensity of reflection light by receiving the reflection light through the monitoring window. The substrate processing method further includes measuring a temporal variation in the reflection light intensity during the deposition process and calculating a termination time of the deposition process based on a measurement value of the temporal variation; and terminating the deposition process by setting the termination time as an end point of the deposition process.

Abstract: A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds.

Abstract: The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.

Abstract: A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.

Abstract: A semiconductor device manufacturing method includes a plasma etching step for etching an etching target film formed on a substrate accommodated in a processing chamber. In the plasma etching step, a processing gas including a gaseous mixture containing predetermined gases is supplied into the processing chamber, and a cycle including a first step in which a flow rate of at least one of the predetermined gases is set to a first value during a first time period and a second step in which the flow rate thereof is set to a second value that is different from the first value during a second time period is repeated consecutively at least three times without removing a plasma. The first time period and the second time period are set to about 1 to 15 seconds.

Abstract: A substrate processing method processes a substrate including a processing target film, an organic film provided on the processing target film and having a plurality of line-shaped portions having fine width, and a hard film covering the line-shaped portions and the processing target film exposed between the line-shaped portions. The method includes a first etching step of etching a part of the hard film to expose the organic film and portions of the processing target film between the line-shaped portions; an ashing step of selectively removing the exposed organic film; and a second etching step of etching a part of the remaining hard film.

Abstract: Disclosed is a substrate processing method capable of preventing an etching rate from being deteriorated when a high aspect ratio hole or trench is formed on an oxide film. When a high aspect ratio hole or trench is formed on an oxide film by etching the oxide film formed on a wafer using a hard mask layer having an opening and made of silicon, the oxide film corresponding to the opening is etched using plasma generated from a processing gas containing a C4F6 gas and a methane gas. Subsequently, a reactive product generated by the etching and deposited on an inner surface of the hole of the oxide film is ashed with plasma generated from a processing gas containing an oxygen gas, and the etching and the ashing processes are repeated in sequence.

Abstract: In a substrate processing method of processing a substrate in which a processing target layer, an intermediate layer, and a mask layer are stacked one on top of another, the mask layer having an opening that partially exposes the intermediate layer, a thickness of the mask layer is increased by depositing deposits on an upper surface of the mask layer with plasma generated from a mixed gas of SF6 gas and a depositive gas represented in a general equation, CxHyFz (where, x, y, and z are positive integers).

Abstract: The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.