Abstract: A substrate includes a plurality of OLED, each having a conductor layer. A coating is formed over the OLEDs, the coating comprises a first inorganic layer formed over the OLED structures and at least partially over each of the contact layers, a buffer layer over the first inorganic layer, a second inorganic layer over the buffer layer, wherein the buffer layer comprises a first inorganic interface layer in contact with the first inorganic layer, a second inorganic interface layer in contact with the second inorganic layer, and an organic layer sandwiched between the first and second inorganic interface layers.

Abstract: A substrate includes a plurality of OLED, each having a conductor layer. A coating is formed over the OLEDs, the coating comprises a first inorganic layer formed over the OLED structures and at least partially over each of the contact layers, a buffer layer over the first inorganic layer, a second inorganic layer over the buffer layer, wherein the buffer layer comprises a first inorganic interface layer in contact with the first inorganic layer, a second inorganic interface layer in contact with the second inorganic layer, and an organic layer sandwiched between the first and second inorganic interface layers.

Abstract: A method for auto-sequencing of plasma processing system for concurrent processing of several substrates. The method autonomously sequence processing and move substrates in different directions as necessary. The method moves two substrate trays together into the processing chamber for substrate exchange, and remove the trays from the chamber one at a time. When needed, the method moves one tray into the processing chamber for removal of the susceptor without exposing the chamber to atmospheric environment.

Abstract: To provide a processor and a processing method to make the operation to load and unload workpieces to and from a processing chamber more efficient, and improve workpiece processing efficiency.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: An architecture for substrate processing system wherein a group of several substrates are transferred simultaneously and processed simultaneously. Robot arm is used to transfer the substrates using a substrate hanger attached to the end thereof. The hanger is configured to slide above the substrates and pick up the substrates using hanger extensions that slide under the substrates and hold the substrates at their peripheral edge. By hanging the substrates from above, no regards to the position of lift pins is necessary. Also, by constructing the hanger to be symmetrical, the hanger motion is strictly linear and need not rotate. This saves transfer time and avoids collision with lift pins. Also, the symmetry and linear motion of the hanger maintains the substrates at the same relative position throughout the transfer and processing sequence.

Abstract: A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

Abstract: A method for auto-sequencing of plasma processing system for concurrent processing of several substrates. The method autonomously sequence processing and move substrates in different directions as necessary. The method moves two substrate trays together into the processing chamber for substrate exchange, and remove the trays from the chamber one at a time. When needed, the method moves one tray into the processing chamber for removal of the susceptor without exposing the chamber to atmospheric environment.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: To provide a processor and a processing method to make the operation to load and unload workpieces to and from a processing chamber more efficient, and improve workpiece processing efficiency.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

Abstract: A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

Abstract: The substrate processing apparatus is capable of highly efficiently feeding and carrying out work and improving production efficiency. The substrate processing apparatus comprises: a processing chamber including a processing stage; a first load lock chamber for feeding the work, the first load lock chamber being communicated to the processing chamber; a second load lock chamber for carrying out the work, the second load lock chamber being communicated to the processing chamber; a first buffer storage being located between the processing chamber and the first load lock chamber, the first buffer storage storing the work to be transferred therebetween; and a second buffer storage being located between the processing chamber and the second load lock chamber, the second buffer storage storing the work to be transferred therebetween.

Abstract: The showerhead for a CVD apparatus can be easily produced and is capable of forming a film efficiently. The showerhead comprises: a shower plate being made of a metal; and a porous plate contacting a rear face of the shower plate. A plurality of gas diffusion holes are formed in a plate section of the shower plate, which faces a workpiece, and penetrate the plate section in the thickness direction, and the porous plate covers all of the gas diffusion holes.

Abstract: The substrate processing apparatus is capable of highly efficiently feeding and carrying out work and improving production efficiency. The substrate processing apparatus comprises: a processing chamber including a processing stage; a first load lock chamber for feeding the work, the first load lock chamber being communicated to the processing chamber; a second load lock chamber for carrying out the work, the second load lock chamber being communicated to the processing chamber; a first buffer storage being located between the processing chamber and the first load lock chamber, the first buffer storage storing the work to be transferred therebetween; and a second buffer storage being located between the processing chamber and the second load lock chamber, the second buffer storage storing the work to be transferred therebetween.

Abstract: The vapor deposition apparatus has an electrode plate, which is capable of being easily produced, reducing a production cost and enhancing the ionization efficiency of the reactants. The chemical vapor deposition apparatus comprises a processing chamber and the electrode plate provided in the processing chamber, reactants are spouted from the electrode plate toward the work piece with applying radio frequency energy between the electrode plate and the work piece so as to produce plasma there between to process the work piece. The electrode plate has a plate proper including a plurality of gas spouts, which run through the plate proper in the thickness direction thereof, and the gas spouts are opened in inner bottom faces of any grooves, which are formed in a surface of the plate proper facing the work piece and extended to linearly transect the plate proper.

Abstract: A workpiece loading interface is included within a workpiece processing system which processes workpieces, typically wafers, in a vacuum. The workpiece loading interface includes two separate chambers. Each chamber may be separately pumped down. Thus, while a first cassette of wafers, from a first chamber is being accessed, a second cassette of wafers may be loaded in the second chamber and the second chamber pumped down. Each chamber is designed to minimize intrusion to a clean room. Thus a door to each chamber has a mechanism which, when opening the door, first moves the door slightly away from an opening in the chamber and then the door is moved down parallel to the chamber. After the door is opened, a cassette of wafers is lowered through the opening in a motion much like a drawbridge. The cassette may be pivoted within the chamber when the position from which wafers are accessed from the cassette differs from the position from which the cassette is lowered out of the chamber.

Abstract: In one embodiment, a lifting apparatus in an integrated circuit fabrication system includes a sliding mechanism supporting a rotatable assembly and an actuator configured to vertically move the sliding mechanism. Among other advantages, the apparatus allows the rotatable assembly to be lifted and then rotated to allow access to interior components, for example. In one embodiment, the rotatable assembly comprises a lid of a process chamber.

Abstract: There is provided a method used for processing an organic low dielectric constant insulating film to a desired shape for enabling facilitated stripping of an organic film formed on top of the organic low dielectric constant insulating film. Specifically, there is provided a method for stripping an organic film formed on a layered unit having at least an organic low dielectric constant insulating film. This method includes generating radicals in a gas mainly composed of fluorine-based gas, and stripping the organic film by the generated radicals.