Patents by Inventor Masato Yamada

Masato Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7864304
    Abstract: A beam irradiation device includes: a first light source for emitting laser light; an actuator for moving a scanning section for receiving the laser light to scan a target area with the laser light; a second light source movable with the scanning section and adapted for emitting diffused light; a light receiving position detecting device for receiving the diffused light to output a signal depending on a position of receiving the diffused light; and a light projecting element, disposed at a position closer to the light receiving position detecting device with respect to an intermediate position between the second light source and the light receiving position detecting device, for projecting an emission position to be defined by the second light source on the light receiving position detecting device via a predetermined projection area.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: January 4, 2011
    Assignees: Sanyo Electric Co., Ltd., Sanyo Optec Design Co., Ltd.
    Inventors: Masato Yamada, Atsushi Yamaguchi, Yoshiaki Maeno
  • Publication number: 20100321751
    Abstract: A mirror actuator includes a base block; a first pivot shaft fixedly attached to the base block; a first pivot portion pivotally supported on the first pivot shaft; a second pivot shaft fixedly attached to the first pivot portion and perpendicularly intersecting with the first pivot shaft; a second pivot portion pivotally supported on the second pivot shaft; and a mirror attached to the second pivot portion. In the above arrangement, the first pivot portion and the second pivot portion respectively have a first bearing portion and a second bearing portion for bearing the first pivot shaft and the second pivot shaft at one position.
    Type: Application
    Filed: June 15, 2010
    Publication date: December 23, 2010
    Applicant: SANYO Electric Co., Ltd.
    Inventors: Masato Yamada, Yoichiro Goto, Nobuo Iwatsuki, Yoshiaki Maeno
  • Patent number: 7826117
    Abstract: An attachment lens is arranged in a stage subsequent to a scanning lens. After a laser beam is converged by the scanning lens, the laser beam is converted into a parallel beam by the attachment lens. When the scanning lens is displaced in a direction perpendicular to an optical axis of the laser beam, a traveling direction of the laser beam is bent by a predetermined angle immediately after the laser beam passes through the scanning lens. Then, the traveling direction of the laser beam is further bent by a predetermined angle in the same direction by the passage of the laser beam through the attachment lens. Accordingly, a final swing angle of the laser beam outgoing from an outgoing window is increased by a swing angle imparted by the attachment lens compared with the case where the attachment lens is not arranged. One of lens surfaces of the attachment lens is formed in a toroidal surface, which allows the laser beam to have a long outline in a vertical direction.
    Type: Grant
    Filed: February 16, 2007
    Date of Patent: November 2, 2010
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masato Yamada, Yoshihisa Suzuki
  • Patent number: 7773277
    Abstract: A light refracting element formed in parallel plate shape is attached to a support shaft of a mirror holder, a semiconductor laser and a PSD are disposed at positions between which the light refracting element is sandwiched. The light refracting element is rotated by rotation of the mirror holder, and whereby a laser beam irradiation position is changed on a light acceptance surface of PSD. The laser beam irradiation position on a light acceptance surface corresponds to the mirror rotation position, so that the mirror rotation position and a laser beam scanning position in a target area can be detected based on an output from the PSD.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: August 10, 2010
    Assignees: Sanyo Electric Co., Ltd, Sanyo Optec Design Co., Ltd.
    Inventors: Atsushi Yamaguchi, Masato Yamada, Yoshiaki Maeno
  • Publication number: 20100188722
    Abstract: An attachment lens is arranged in a stage subsequent to a scanning lens. After a laser beam is converged by the scanning lens, the laser beam is converted into a parallel beam by the attachment lens. When the scanning lens is displaced in a direction perpendicular to an optical axis of the laser beam, a traveling direction of the laser beam is bent by a predetermined angle immediately after the laser beam passes through the scanning lens. Then, the traveling direction of the laser beam is further bent by a predetermined angle in the same direction by the passage of the laser beam through the attachment lens. Accordingly, a final swing angle of the laser beam outgoing from an outgoing window is increased by a swing angle imparted by the attachment lens compared with the case where the attachment lens is not arranged. One of lens surfaces of the attachment lens is formed in a toroidal surface, which allows the laser beam to have a long outline in a vertical direction.
    Type: Application
    Filed: January 15, 2010
    Publication date: July 29, 2010
    Applicant: SANYO Electric Co., Ltd.
    Inventors: Masato Yamada, Yoshihisa Suzuki
  • Publication number: 20100073750
    Abstract: A light refracting element formed in parallel plate shape is attached to a support shaft of a mirror holder, a semiconductor laser and a PSD are disposed at positions between which the light refracting element is sandwiched. The light refracting element is rotated by rotation of the mirror holder, and whereby a laser beam irradiation position is changed on a light acceptance surface of PSD. The laser beam irradiation position on a light acceptance surface corresponds to the mirror rotation position, so that the mirror rotation position and a laser beam scanning position in a target area can be detected based on an output from the PSD.
    Type: Application
    Filed: March 12, 2008
    Publication date: March 25, 2010
    Applicants: Sanyo Electric Co., Ltd., Sanyo Optec Design Co., Ltd.
    Inventors: Atsushi YAMAGUCHI, Masato Yamada, Yoshiaki Maeno
  • Patent number: 7605909
    Abstract: An object of the present invention is to provide a detection device which does not cause the false detection by receiving laser light from an oncoming car. The pulse laser light modulated with a modulation pattern set every target position is irradiated at the target position from a laser irradiation portion. DSP (Digital Signal Processor) decides that there is an obstacle at the target position only when the modulation pattern of the pulse laser light emitted from the laser emitting portion matches with the modulation pattern of the pulse laser light received by the laser receiving portion. It is suppressed that the detection device misdetects the conditions of the target position when receiving laser light from an oncoming car or the like because modulation pattern of laser light from own does not match with modulation pattern of laser light from the oncoming car or the like.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: October 20, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Atsushi Yamaguchi, Yoshihisa Suzuki, Masato Yamada, Shuichi Ichiura
  • Patent number: 7589352
    Abstract: A light emitting element (100) comprising an element chip (100C) provided, at least in a partial section in the thickness direction thereof, with a part of reduced cross-section where the cross sectional area decreases continuously or stepwise in the direction perpendicular to the thickness direction from the first major surface side toward the second major surface side. A part of a molded section (25) has a first mold layer (26) covering at least the part of reduced cross-section, and a second mold layer (25m) covering the outside of the first mold layer (26), wherein the first mold layer (26) is composed of a polymer mold material softer than that of the second mold layer (25m). A light emitting element, having such a structure that the element chip bonded onto a metal stage is not stripped easily even if mold resin expands, is thereby provided.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: September 15, 2009
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masato Yamada, Masanobu Takahashi
  • Publication number: 20090201488
    Abstract: A beam irradiation device includes: a first light source for emitting laser light; an actuator for moving a scanning section for receiving the laser light to scan a target area with the laser light; a second light source movable with the scanning section and adapted for emitting diffused light; a light receiving position detecting device for receiving the diffused light to output a signal depending on a position of receiving the diffused light; and a light projecting element, disposed at a position closer to the light receiving position detecting device with respect to an intermediate position between the second light source and the light receiving position detecting device, for projecting an emission position to be defined by the second light source on the light receiving position detecting device via a predetermined projection area.
    Type: Application
    Filed: February 6, 2009
    Publication date: August 13, 2009
    Applicants: SANYO Electric., Ltd., SANYO Optec Design Co., Ltd.
    Inventors: Masato Yamada, Atsushi Yamaguchi, Yoshiaki Maeno
  • Patent number: 7570346
    Abstract: A scan trajectory of a laser beam is controlled based on external signals each related to a driving direction and a driving speed, a result obtained by detection of an obstacle, and signals related to distances to the obstacle. For example, at the time of a right turn, a scan trajectory for increasing scan frequency on a portion shifted in a right-turn direction from a center axis in a driving direction is set. At the time of high-speed driving, a scan trajectory for increasing scan frequency on a center portion in the driving direction is set. When the obstacle is detected at a position corresponding to a distance shorter than a threshold distance, a scan trajectory for increasing scan frequency in the vicinity of the obstacle is set. Detection and monitoring are performed at the time of: changing of the driving direction, the high-speed driving, and the detection of the obstacle.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: August 4, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Atsushi Yamaguchi, Shinji Kobayashi, Masato Yamada, Shuichi Ichiura
  • Patent number: 7566861
    Abstract: A detection device detects an obstacle within a target region by setting the target region, setting a scan trajectory, and setting a pattern of an irradiation position of a laser beam within the target region based on a signal related to a moving state of the detection device or a moving object on which the detection device is mounted.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: July 28, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masato Yamada, Shuichi Ichiura
  • Patent number: 7553685
    Abstract: A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7?, 9? on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7?, 9?, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7?, 9?.
    Type: Grant
    Filed: August 6, 2003
    Date of Patent: June 30, 2009
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Nobuhiko Noto, Masato Yamada, Shinji Nozaki, Kazuo Uchida, Hiroshi Morisaki
  • Patent number: 7538310
    Abstract: A DSP control circuit monitors a scan position of laser beams on the target region based on a signal from a PSD. Further, the DSP control circuit measures an amount of laser beams reflected from the target region for each scan position based on a signal from a beam receiving portion. The DSP control circuit compares an amount of reflected beams P0 at a scan position (reference position) on the target region with an amount of reflected beams Pk at a scan position adjacent to the scan position. If Pk/P0 is equal to or smaller than a threshold value Rs, it is determined that the scan position corresponding to the amount of reflected beams Pk is nonuniform in irradiation intensity of the laser beams. The DSP control circuit increases emission intensity plurality of times for the position that is determined to be nonuniform in irradiation intensity of the laser beams. With this, it is possible to make irradiation intensityies of the laser beams uniform over the target region.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: May 26, 2009
    Assignee: Sanyo Electric Co., Ltd.
    Inventor: Masato Yamada
  • Patent number: 7511314
    Abstract: Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 ?m which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×1016/cm3 and not more than 2×1018/cm3. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.
    Type: Grant
    Filed: October 15, 2004
    Date of Patent: March 31, 2009
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masato Yamada, Masayuki Shinohara, Masanobu Takahashi, Keizou Adomi, Jun Ikeda
  • Publication number: 20090059766
    Abstract: A beam irradiation device includes a light source for emitting laser light, an actuator for displacing a propagation direction of the laser light in accordance with a control signal, and a scan expansion lens for increasing a swing width of the laser light to be generated by the actuator. A spectral element is arranged between the actuator and the scan expansion lens. The spectral element allows at least a part of the laser light to be incident from the actuator to transmit, and reflects at least a part of the laser light to be incident from the scan expansion lens. The beam irradiation device further includes a light detector for receiving the laser light to be reflected on the spectral element to output an electrical signal.
    Type: Application
    Filed: August 29, 2008
    Publication date: March 5, 2009
    Applicants: Sanyo Electric Co., Ltd., Sanyo Optec Design Co., Ltd.
    Inventor: Masato Yamada
  • Patent number: 7407046
    Abstract: An externally controlled fan drive includes a fluid clutch that alters torque delivered to a fan housing to rotate the fan housing at a target fan speed. An adaptive controller measures the actual fan speed and adaptively updates the control logic to compensate for variable physical characteristics of the fan device.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: August 5, 2008
    Assignee: USUI International Corp.
    Inventors: Nikhil D. Bhat, Masato Yamada, Sameer A. Joshi, Ananthakrishnan Surianarayanan
  • Patent number: 7351944
    Abstract: In a beam irradiation device of the present invention, laser beams emitted from a semiconductor laser impinge on an irradiation lens supported by a lens actuator. The laser beams that have passed through the irradiation lens change in outgoing angle in the direction of a y-z plane as the lens actuator is driven. A laser beam scan in the target region is thus performed. A part of the laser beams that have passed through the irradiation lens is reflected and separated by a beam splitter. The separated beams are converged on a PSD through a converging lens. A DSP control circuit monitors a scan position of the laser beams that have passed through the irradiation lens based on a signal from the PSD. When an irradiation position has deviated from a scan trajectory, the DSP control circuit controls an actuator driving circuit to draw the irradiation position back onto the scan trajectory. This beam irradiation device can realize a smooth and stable beam scan operation with a simple construction.
    Type: Grant
    Filed: November 22, 2005
    Date of Patent: April 1, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masato Yamada, Hitoshi Terasaki, Yoichi Tsuchiya, Shuichi Ichiura, Masahiro Higuchi, Mikio Ichihashi, Youichiro Goto, Yoshiaki Maeno
  • Publication number: 20070195393
    Abstract: An attachment lens is arranged in a stage subsequent to a scanning lens. After a laser beam is converged by the scanning lens, the laser beam is converted into a parallel beam by the attachment lens. When the scanning lens is displaced in a direction perpendicular to an optical axis of the laser beam, a traveling direction of the laser beam is bent by a predetermined angle immediately after the laser beam passes through the scanning lens. Then, the traveling direction of the laser beam is further bent by a predetermined angle in the same direction by the passage of the laser beam through the attachment lens. Accordingly, a final swing angle of the laser beam outgoing from an outgoing window is increased by a swing angle imparted by the attachment lens compared with the case where the attachment lens is not arranged. One of lens surfaces of the attachment lens is formed in a toroidal surface, which allows the laser beam to have a long outline in a vertical direction.
    Type: Application
    Filed: February 16, 2007
    Publication date: August 23, 2007
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Masato Yamada, Yoshihisa Suzuki
  • Publication number: 20070187712
    Abstract: A composite growth-assisting substrate 10 is formed by epitaxially growing a separation-assisting compound semiconductor layer 10k composed of a non-GaAs III-V compound semiconductor single crystal, and then a sub-substrate 10e composed of a GaAs single crystal in this order, on a first main surface of a substrate bulk 10m composed of a GaAs single crystal. The sub-substrate portion 10e is then separated from the composite growth-assisting substrate 10, so as to be left as a residual substrate portion 1 on a second main surface of the main compound semiconductor layer 40, and a portion of the residual substrate portion 1 is cut off to thereby form a cut-off portion 1j having a bottom surface used as a light extraction surface. By this configuration, the light emitting device is provided as allowing effective use of the GaAs substrate, and increasing the light extraction efficiency.
    Type: Application
    Filed: February 25, 2005
    Publication date: August 16, 2007
    Applicant: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masato Yamada, Masanobu Takahashi
  • Publication number: 20070145405
    Abstract: Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 ?m which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×1016/cm3 and not more than 2×1018/cm3. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.
    Type: Application
    Filed: October 15, 2004
    Publication date: June 28, 2007
    Applicant: Shin -Etsu Handotai Co., Ltd.
    Inventors: Masato Yamada, Masayuki Shinohara, Masanobu Takahashi, Keizou Adomi, Jun Ikeda