Abstract: The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

Abstract: The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

Abstract: The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

Abstract: Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.

Abstract: A Schottky-barrier junction element 1 has a Schottky-barrier junction between an organic semiconductor 3 and an organic conductor 4. The inorganic semiconductor 3 is any one of nitride semiconductors, Si, GaAs, CdS, CdTe, CuInGaSe, InSb, PbTe, PbS, Ge, InN, GaSb, and SiC. A solar cell uses this Schottky-barrier junction element 1, with its photoelectric conversion section including the Schottky junction. A photoelectric conversion element uses this Schottky-barrier junction element 1, with its conversion section for interconverting light and electricity including the Schottky junction.

Abstract: The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1), the Ga face (2) growing in +c face, and the N face (3) growing in ?c face.

Abstract: The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

Abstract: Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.

Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Abstract: A method for growing a nitride thin film on a sapphire substrate, in which using no resists, miniaturization can be accomplished while relieving vexatious complication of the process; and a relevant device using nitride thin film. There is provided a method for growing a nitride thin film on a sapphire substrate, comprising irradiating a sapphire substrate having undergone high temperature hydrogen treatment with electron beams and depositing a nitride thin film on the substrate having undergone the electron beam irradiation by using the metal-organic chemical vapor deposition technique to thereby accomplish patterning of nitride thin film.

Abstract: The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

Abstract: Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride semiconductor layer provided adjacent to the first group III nitride semiconductor layer and made of a thin-film crystal having c-axis orientation in a thickness direction, the second group III nitride semiconductor layer having an Al composition higher than that of the first group III nitride semiconductor layer.

Abstract: The present invention provides a method for growing a thin nitride film over a substrate and a thin nitride film device, in which the polarity of the thin nitride film can be controlled by a low temperature process. In the method for growing the thin nitride film over a substrate, a Ga face (2) and a N face (3) are formed over a c face sapphire (Al2O3) substrate (1) , the Ga face (2) growing in +c face, and the N face (3) growing in ?c face.

Abstract: In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal structure, and a single crystal semiconductor layer is epitaxially grown on the metal layer. Particularly, on a c-face of a sapphire substrate, a platinum layer is epitaxially grown in a crystal orientation of (111) by sputtering, while the sapphire substrate is heat at about 400-700° C. After annealing at 600-900° C., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer with a thickness of 500-2000 Å by MOVPE, while the sapphire substrate is heated at about 600° C. Finally, a single crystal gallium nitride layer is epitaxially grown on the buffer layer by MOVPE, while the sapphire substrate is heated at about 1000° C.

Abstract: A process and apparatus for depositing a film as desired on the surface of a substrate yet at a low temperature, said process comprising introducing a product gas into a film deposition chamber having provided therein a substrate being mounted on a support, and depositing a film on the surface of said substrate by activating said product gas inside said film deposition chamber while applying ultrasonic oscillation to said substrate.