Abstract: The present invention makes it possible to increase the reliability of a semiconductor device. A manufacturing method of a semiconductor device according to the present invention includes a step of removing a patterned resist film and the step of removing a patterned resist film includes the steps of: (A) introducing at least a gas containing oxygen into a processing room; (B) starting electric discharge for transforming the gas containing oxygen into plasma; and (C) introducing a water vapor or an alcohol vapor into the processing room. On this occasion, the step (C) is applied either simultaneously with or after the step (B).

Abstract: The present invention makes it possible to increase the reliability of a semiconductor device. A manufacturing method of a semiconductor device according to the present invention includes a step of removing a patterned resist film and the step of removing a patterned resist film includes the steps of: (A) introducing at least a gas containing oxygen into a processing room; (B) starting electric discharge for transforming the gas containing oxygen into plasma; and (C) introducing a water vapor or an alcohol vapor into the processing room. On this occasion, the step (C) is applied either simultaneously with or after the step (B).

Abstract: A continuous casting device capable of giving lubricating property to a molten metal pouring nozzle without increasing lubricating oil and performing casting with high casting surface quality for a long period of time is provided. In a continuous casting device 1 in which a molten metal pouring nozzle 20 is arranged between a molten metal receiving portion 10 and a mold 40, the molten metal pouring nozzle 20 is equipped with a cylindrical main body portion 22 made of a fire-resistant substance and having a molten metal passage 21, and an annular member 30 having self-lubricating property is arranged on a mold-side end face 23 of the main body portion 22 so as to surround the molten metal passage 21.

Abstract: A continuous casting device capable of giving lubricating property to a molten metal pouring nozzle without increasing lubricating oil and performing casting with high casting surface quality for a long period of time is provided. In a continuous casting device 1 in which a molten metal pouring nozzle 20 is arranged between a molten metal receiving portion 10 and a mold 40, the molten metal pouring nozzle 20 is equipped with a cylindrical main body portion 22 made of a fire-resistant substance and having a molten metal passage 21, and an annular member 30 having self-lubricating property is arranged on a mold-side end face 23 of the main body portion 22 so as to surround the molten metal passage 21.

Abstract: A continuous casting apparatus, continuous casting method and aluminum alloy cast bar enable stable and smooth high-speed casting with a reduced amount of a lubricant and prevent occurrence of breakout and lubricant reaction products, resulting in reduction in ingot failure.

Abstract: A continuous casting apparatus, continuous casting method and aluminum alloy cast bar enable stable and smooth high-speed casting with a reduced amount of a lubricant and prevent occurrence of breakout and lubricant reaction products, resulting in reduction in ingot failure.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a dielectric film provided on the bottom electrode, and a top electrode provided on the dielectric film, a mask film provided on the top electrode and used as a mask when a pattern of the capacitor is formed, wherein an inclination of a side surface of the mask film is gentler than an inclination of a side surface of the top electrode and an inclination of a side surface of the dielectric film.

Abstract: A semiconductor manufacturing apparatus capable of removing metal derived from an electrode from ozone generated by the silent discharge is provided. The ozone generated by the silent discharge between electrodes in the ozone generating unit is permeated through a molecule permeable film based on pressure difference between the back and the front of the molecule permeable film constituting a filter. The permeated ozone is supplied together with separately-generated water vapor to a resist surface on a semiconductor wafer to remove the resist. In the resist removal described above, the high-concentration metal contamination due to the metal derived from an electrode can be prevented.

Abstract: A compound represented by the following general formula (I), a liquid crystal composition comprising the same, and a liquid crystal element using this liquid crystal composition. ##STR1## (wherein B.sub.1 and B.sub.2 represent independently a trans-1,4-cyclohexylene group or a 1,4-phenylene group wherein at least one hydrogen atom on the six-membered ring is optionally substituted by a halogen atom, Y represents a halogen-substituted alkyl group having 1 to 3 carbon atoms, a halogen-substituted alkoxy group having 1 to 3 carbon atoms, a cyano group, a fluorine atom or a chlorine atom, X represents a fluorine atom, a chlorine atom or a hydrogen atom, R.sub.1 represents an alkyl group having 1 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, n and m represent independently 1 or 2 and p represents 0 or 1.

Abstract: An optically active compound derived from a novel trifluorolactic acid, useful as a component of a ferroelectric liquid crystal composition, and a liquid crystal composition. A compound represented by general formula (I), wherein R.sup.1 represents C.sub.1 to C.sub.18 alkyl, alkoxy, C.sub.2 to C.sub.18 alkanoyl, alkanoyloxy or alkoxycarbonyl; R.sup.2 represents optionally alkoxy-substituted alkyl (where the total number of the carbon atoms is 1 to 15); A, B and C represent each independently the group (a) or (b); v and w represent each independently --COO--, --OCO--, --CH.sub.2 O--, --OCH.sub.2 --, --CH.sub.2 --CH.sub.2 --, --CH.dbd.CH--, --C.dbd.C-- or a single bond; and x and y together represent any of the following combinations: --COO-- and --COO--; --COO-- and --CO--; --COO-- and --CH.sub.2 O--; --COO-- and --CH.sub.2 OCO--; --COO-- and --CH.sub.2 OCOO--; --O-- and --CH.sub.2 O--; --O-- and --CH.sub.2 OCO--; and --O-- and --CH.sub.2 OCOO--.

Abstract: A composition containing a smectic C compound, having a .DELTA..epsilon. of negative value and enabling to effect a high speed response; a ferroelectric chiral smectic C liquid crystal composition using the same; and a ferroelectric liquid crystal display device using the ferroelectric chiral smectic C liquid crystal composition are provided,which composition containing a smectic C compound comprises at least one compound expressed by the formula (I) ##STR1## wherein R.sup.1 and R.sup.2 each represent different linear alkyl groups of 1 to 9 C, andat least one compound-expressed by the formula (II) ##STR2## wherein R.sup.3 and R.sup.4 each represent the same or different linear alkyl groups of 1 to 18 C and X is H or F.

Abstract: A composition containing a smectic C compound, having a .DELTA..epsilon. of negative value and enabling to effect a high speed response; a ferroelectric chiral smectic C liquid crystal composition using the same; and a ferroelectric liquid crystal display device using the ferroelectric chiral smectic C liquid crystal composition are provided,which composition containing a smectic C compound comprises at least one compound expressed by the formula (I) ##STR1## wherein R.sup.1 and R.sup.2 each represent different linear alkyl groups of 1 to 9 C, andat least one compound expressed by the formula (II) ##STR2## wherein R.sup.3 and R.sup.4 each represent the same or different linear alkyl groups of 1 to 18 C and X is H or F.

Abstract: A novel lactone compound exhibiting a larger spontaneous polarization value when added to ferroelectric liquid crystal compositions as a basic substance, than those of so far known lactone compounds, and yet having a relatively low viscosity, and a liquid crystal composition comprising the compound, and further a liquid crystal element using the same are provided, the lactone compound being expressed by the formula ##STR1## wherein R.sup.1 is a linear or branched alkyl group or alkoxy group of 1-15C, R.sup.2 is a linear or branched alkyl group of 1-16C, --A-- is single bond, 1,4-phenylene group or 1,4-cyclohexylene group and * is an asymmetric carbon atom.

Abstract: A mother blank for producing starting sheets used in electrolytic non-ferrous metal production, is composed of a laminar electrolytic deposition member comprising a planar metal member constituting the central layer of laminar deposition member, and electrically conductive polybutene resin layers constituting two surface layers of the laminar deposition member, and a frame-like member made of an electrically nonconductive polybutene resin and attached integrally to the periphery of the laminar deposition member.