Abstract: A vehicle suspension link device including a link element with a first and a second connection locus, for connection of the link element to a vehicle support structure and to a vehicle axle respectively, and a sensor element for detecting a movement of the link element, the sensor element being attached to the link element at an attachment point located on a virtual straight axis joining the first connection locus and the second connection locus.

Abstract: A solid-state imaging element according to the present disclosure includes a first light receiving pixel, a second light receiving pixel, and a metal layer. The first light receiving pixel receives visible light. The second light receiving pixel receives infrared light. The metal layer is provided to face at least one of a photoelectric conversion unit of the first light receiving pixel and a photoelectric conversion unit of the second light receiving pixel on an opposite side of a light incident side, and contains tungsten as a main component.

Abstract: A solid-state imaging element that includes a semiconductor layer, a floating diffusion region (FD), a penetrating pixel separation region, and a non-penetrating pixel separation region. In the semiconductor layer, a visible-light pixel (PDc) that receives visible light and an infrared-light pixel (PDw) that receives infrared light are two-dimensionally arranged. The floating diffusion region is provided in the semiconductor layer and is shared by adjacent visible-light and infrared-light pixels. The penetrating pixel separation region is provided in a region excluding a region corresponding to the floating diffusion region in an inter-pixel region of the visible-light pixel and the infrared-light pixel, and penetrates the semiconductor layer in a depth direction.

Abstract: The solid-state imaging element includes a plurality of first light receiving pixels that receives visible light, a plurality of second light receiving pixels that receives infrared light, a separation region, and a light shielding wall. The plurality of first light receiving pixels and the plurality of second light receiving pixels are arranged in a matrix, and the separation regionis arranged in a lattice pattern, light and has a plurality of intersection portions The light shielding wall is provided in the separation region and includes a first light shielding wall provided along a first direction in plan view, and a second light shielding wall provided along a second direction intersecting the first direction in plan view. In addition, the first light shielding wall and the second light shielding wall are spaced apart at the intersection portionof at least a part of the separation region.

Abstract: A vehicle suspension link device including a link element with a first and a second connection locus, for connection of the link element to a vehicle support structure and to a vehicle axle respectively, and a sensor element for detecting a movement of the link element, the sensor element being attached to the link element at an attachment point located on a virtual straight axis joining the first connection locus and the second connection locus.

Abstract: The present disclosure relates to a solid-state imaging apparatus and an electronic device capable of reducing a product yield and reliability risk. By forming a contact by forming an opening in an insulating film on a back surface of a peripheral circuit region without connecting a light-shielding metal on the peripheral circuit region to the ground (GND), the light-shielding metal is connected to a Si substrate. Furthermore, a light-shielding metal on a pixel region is connected to the ground (GND). Therefore, by disposing an isolated region (insulating region) where no metal is formed between the light-shielding metal on the pixel region and the light-shielding metal on the peripheral circuit region, the light-shielding metal on the pixel region does not cause a short circuit with the light-shielding metal on the peripheral circuit region. The present disclosure can be applied to, for example, a CMOS solid-state imaging apparatus used for an imaging apparatus such as a camera.

Abstract: The present disclosure relates to a solid-state imaging apparatus and an electronic device capable of reducing a product yield and reliability risk. By forming a contact by forming an opening in an insulating film on a back surface of a peripheral circuit region without connecting a light-shielding metal on the peripheral circuit region to the ground (GND), the light-shielding metal is connected to a Si substrate. Furthermore, a light-shielding metal on a pixel region is connected to the ground (GND). Therefore, by disposing an isolated region (insulating region) where no metal is formed between the light-shielding metal on the pixel region and the light-shielding metal on the peripheral circuit region, the light-shielding metal on the pixel region does not cause a short circuit with the light-shielding metal on the peripheral circuit region. The present disclosure can be applied to, for example, a CMOS solid-state imaging apparatus used for an imaging apparatus such as a camera.

Abstract: A work vehicle includes a Diesel Particulate Filter DPF and a Selective Catalytic Reuction SCR connected to one another and disposed upwardly of an engine mounted in an engine room covered by a hood located forwardly of a driving operation section, the DPF and the SCR being disposed in juxtaposition in a vehicle body transverse direction.

Abstract: A work vehicle includes a Diesel Particulate Filter DPF and a Selective Catalytic Reuction SCR connected to one another and disposed upwardly of an engine mounted in an engine room covered by a hood located forwardly of a driving operation section, the DPF and the SCR being disposed in juxtaposition in a vehicle body transverse direction.

Abstract: A solid state imaging device includes: a semiconductor substrate having photoelectric conversion regions arranged in matrix, charge transfer regions, and element-separating regions; an insulating film on the semiconductor substrate; transfer electrodes provided in one-to-one with the photoelectric conversion regions and disposed on the insulating film at locations corresponding to the charge transfer regions; and wiring portions each connecting transfer electrodes adjacent in a row direction. The charge transfer regions are doped with impurities so that, in any charge transfer region, a potential of each portion corresponding to an upstream edge of a transfer electrode in the charge transfer direction is lower than the potential of the remaining portions. Each wiring portion connects into a respective transfer electrode at a location offset downstream from the upstream edge of the transfer electrode in the charge transfer direction.

Abstract: Photoelectric conversion regions (130, 140) are formed from both sides of a semiconductor substrate 100, so that the photoelectric conversion regions (130, 140) can be easily formed at a deep position from the surfaces of the semiconductor substrate 100 without using a high-energy ion implanter and a thick resist. With this configuration, long-wavelength input light from a visible light region to a far-red light region can be efficiently absorbed from the outside. Thus it is possible to improve the light receiving sensitivity of a solid-state image device and increase the number of pixels of the solid-state image device without reducing sensitivity in a unit pixel.

Abstract: A tractor change speed apparatus includes a manual change speed device having a combination of gear trains mounted on first and second parallel shafts and driving a change speed output shaft at various speeds. A backward and forward drive switching device is cooperable with the main change speed device for producing forward and backward drives in an equal number of speeds, wherein the forward drive is transmitted through the first shaft and the backward drive is transmitted through the second shaft. A group of gears for returning reverse drive to a forward drive transmission shaft is thereby omitted. Consequently, the backward and forward drive switching device and the entire change speed apparatus has a reduced longitudinal length.

Abstract: A change speed apparatus for a tractor includes a main change speed device (24) having a combination of gear trains mounted on a first shaft and a second shaft extending parallel to each other, for driving a change speed output shaft (58) at a plurality of speeds, and a backward and forward drive switching device (21) cooperable with the main change speed device (24) to produces forward drive and backward drive in an equal number of speeds. Between the main change speed device (24) and the backward and forward drive switching device (21), the forward drive is transmitted through the first shaft (45) and the backward drive is transmitted through the second shaft (44). With this construction, a group of gears for returning reversed drive to a forward drive transmission shaft is omitted from the backward and forward drive switching device (21).

Abstract: A change speed apparatus for a tractor includes a main change speed device (24) having a combination of gear trains mounted on a first shaft and a second shaft extending parallel to each other, for driving a change speed output shaft (58) at a plurality of speeds, and a backward and forward drive switching device (21) cooperable with the main change speed device (24) to produces forward drive and backward drive in an equal number of speeds. Between the main change speed device (24) and the backward and forward drive switching device (21), the forward drive is transmitted through the first shaft (45) and the backward drive is transmitted through the second shaft (44). With this construction, a group of gears for returning reversed drive to a forward drive transmission shaft is omitted from the backward and forward drive switching device (21).

Abstract: A transmission housing (100)used as a body frame extending longitudinally of a tractor. The transmission housing (100) includes a first housing (1) having a front end connected to an engine housing (91), and a rear end; a first partition (1a) defining a first accommodation chamber (3) in the first housing (1) with the front end of the first housing; a second partition (1b) defining, in the first housing (1), a second accommodation chamber (4) with the first partition (1a), and a third accommodation chamber (5) with the rear end of the first housing; and a second housing (2) having a front end connected to the rear end of the first housing, and a rear end, and defining a rear accommodation chamber (6) between with the front end and the rear end. A main clutch (7) is disposed in the first accommodation chamber (3). A shuttle change speed device (8) and a main change speed device (9) are arranged longitudinally in the second accommodation chamber (4).

Abstract: Thermoplastic resin compositions consisting of 1 to 40 wt % a polyether ester amide (A) and 99 to 60 wt % of at least one thermoplastic resin (B) selected from styrene based resins, further containing (C) 0.1-10% of a modified vinyl polymer containing carboxyl groups, are permanently antistatic, excellent in mechanical properties represented by impact resistance, heat resistance moldability and also in the appearance and gloss of the moldings, and suitable for housings of optical or magnetic recording media.

Abstract: A process for producing a molded product having excellent heat resistance, which including forming a composition including a crystalline polyamide by mixing together (a) 50-90% by weight of a hexamethylene adipamide component, (b) 5-40% by weight of a hexamethylene terephthalamide component, (c) 5-30% by weight of a hexamethylene isophthalamide component, components (a), (b) and (c) being based on the weight of the crystalline polyamide, and (d) 1-150 parts by weight of an elastomer, based upon 100 parts by weight of the crystalline polyamide; forming a melt polymer from the composition and applying shear to the melt polymer, the melting point (Tm) and crystallization temperature (Tc) of the crystalline polyamide being Tm.gtoreq.225.degree. C. and Tc.ltoreq.230.degree. C., respectively, and the melt viscosity of the crystalline polyamide varying greatly depending on the shear rate applied to the melt polymer and satisfying formulae (I) and (II):2,000,000.gtoreq..mu.a10.gtoreq.2,000 (I).mu.a10/.mu.a1000.

Abstract: Thermoplastic resin compositions consisting of 1 to 40 wt % a polyether ester amide (A) and 99 to 60 wt % of at least one thermoplastic resin (B) selected from styrene based resins, further containing (C) 0.1-10% of a modified vinyl polymer containing carboxyl groups, area permanently antistatic, excellent in mechanical properties represented by impact resistance, heat resistance moldability and also in the appearance and gloss of the moldings, and suitable for housings of optical or magnetic recording media.