Abstract: A cowl structure for a vehicle, which includes: a box-section cross member under a windshield of the vehicle; an extension member extending frontward from a base wall of the cross member; and a wiper bracket attached to a front wall of the cross member and the extension member. Either the base wall of the cross member or the extension member is provided with a rigidity changing part.

Abstract: By using a novel method, the exposure time of the photosensitive paste layer is reduced and the exposure fineness of the layer is improved, thereby developing a highly fine circuit substrate of high density having a thermal resistance at a reasonable cost. A circuit substrate is manufactured as follows. A photosensitive paste containing photoresist and a circuit material is applied onto a substrate surface so as to form a photosensitive paste layer (4). This photosensitive paste layer (4) is plotted by a laser beam (8) so as to form a plotted area (7). The photosensitive paste layer (4) is developed and an exposed area (4a) or an unexposed area (4b) is removed so as to form a circuit pattern (17). This circuit pattern (17) is sintered to form a circuit pattern (20) composed of the circuit material. It is possible to form a highly fine circuit pattern of high density by laser beam plotting.

Abstract: By improving profile of impurity concentration in a channel portion of an FET or an IGBT of a trench gate type, variation of threshold value is lessened, and a destruction caused by current concentration is prevented while suppressing deterioration of cut-off characteristics. An island of a base region of p-type is formed in a semiconductor substrate of n-type by carrying out high acceleration ion implantation twice followed by annealing, so that the impurity concentration profile in a channel portion changes gradually in a depth direction. Accordingly, it is possible to lessen variation of the threshold value and to reduce pinch resistance while at the same time improving sub-threshold voltage coefficient and conductance characteristics.

Abstract: A developer container includes a developer containing unit containing a developer and a sealing member supplied between a plurality of members to prevent leakage of the developer. The sealing member is a liquid elastomer. In an area in which the liquid elastomer is supplied, supply amounts of the sealing member at a start point and end point are larger than a supply amount of the sealing member in an intermediate portion.

Abstract: A cowl structure for a vehicle, which includes: a box-section cross member under a windshield of the vehicle; an extension member extending frontward from a base wall of the cross member; and a wiper bracket attached to a front wall of the cross member and the extension member. Either the base wall of the cross member or the extension member is provided with a rigidity changing part.

Abstract: First, a trench of a semiconductor substrate is filled with a polysilicon film deposited on the surface of the semiconductor substrate. A selective thin film having etching selectivity with respect to the polysilicon film is formed on the polysilicon film. Then, the selective thin film is etched (etched back) so that a part of the selective thin film remains in a depression of the polysilicon film, as a self-aligning mask. The polysilicon film is further etched with the self-aligning mask, thereby forming a polysilicon embedded layer in the trench with a flat surface.

Abstract: A mounting method for mounting an electroconductive sheet on a developer seal member for sealing a developer discharging opening provided in a developer accommodating container for accommodating a developer. The electroconductive sheet is provided with an adhesive material on one surface thereof. A separation sheet is adhered to the one surface, wherein the separation sheet is larger than the electroconductive sheet. The method includes a suction step of contacting a suction tool to the other surface of the electroconductive sheet. The suction tool is effective to suck air to attract the electroconductive sheet thereon. An exposure step separates the separation sheet from the electroconductive sheet, while the electroconductive sheet is being sucked by the attraction tool, so that the one surface of the electroconductive sheet is exposed.

Abstract: In an LDMOS, an n-type region 6, which is formed to have a concentration higher than that of an n-type substrate 1 and whose concentration gradually increases from the n-type substrate 1 to an n+ type drain region 5, is disposed so as to surround the n+-type drain region 5. Further, a p+-type contact region 9 disposed adjacent to an n+-type source region 8 is formed so as to extend below the n+-type source region 8 so that a parasitic transistor formed by the n+-type source region 8, a p-type base region 7 and the n-type substrate 1 is hardly turned ON.

Abstract: A ground-boring apparatus for boring the ground within a casing tube, which is driven into the ground by a casing tube pusher machine to prevent the surrounding soil from collapsing into a to be formed hole. The soil removed by an extensible kelly bar to be suspended by a movable crane, a boring bucket attached to the lower end of the kelly bar, a supporting frame unit to be placed on the casing tube for holding the kelly bar rotatably about its vertical axis, hydraulic motors provided on the supporting frame unit for turning the kelly bar about its vertical axis, and clamping devices for joining the supporting frame unit and the casing tube.

Abstract: A compound represented by the following Formula (I) or a pharmaceutically acceptable salt thereof: wherein R1 represents a hydrogen atom or a carboxyl-protecting group, R2 represents a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkoxy group or a hydroxyl group, R3 represents a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkoxy group, a lower alkylthio group, a nitro group, a cyano group, a hydroxyl group or an amino group; R4 represents a hydrogen atom, an amino-protecting group, an alkyl group or a cycloalkyl group, and R5 represents a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an alkoxy group, an alkylthio group, a hydroxyl group, an imino group or an amino group.

Abstract: In an LDMOS, an n-type region 6, which is formed to have a concentration higher than that of an n-type substrate 1 and whose concentration gradually increases from the n-type substrate 1 to an n+ type drain region 5, is disposed so as to surround the n+-type drain region 5. Further, a p+-type contact region 9 disposed adjacent to an n+-type source region 8 is formed so as to extend below the n+-type source region 8 so that a parasitic transistor formed by the n+-type source region 8, a p-type base region 7 and the n-type substrate 1 is hardly turned ON.

Abstract: A compound represented by the following Formula (I) or a pharmaceutically acceptable salt thereof: 1

Abstract: In an LDMOS, an n-type region 6, which is formed to have a concentration higher than that of an n-type substrate 1 and whose concentration gradually increases from the n-type substrate 1 to an n+ type drain region 5, is disposed so as to surround the n+-type drain region 5. Further, a p+-type contact region 9 disposed adjacent to an n+-type source region 8 is formed so as to extend below the n+-type source region 8 so that a parasitic transistor formed by the n+-type source region 8, a p-type base region 7 and the n-type substrate 1 is hardly turned ON.

Abstract: A semiconductor substrate has a trench for forming a gate insulation film and a gate electrode therein, or an insulated isolation isolating a semiconductor element like a transistor from other elements. The trench is formed by anisotropic dry etching. After that, a shape of the trench is improved so that a bottom portion and an opening portion are rounded or tapered by a wet process using a mixed solution containing hydrofluoric acid and nitric acid. By modifying the shape of the trench, electrical characteristics of the trench are improved. For example, an oxide film formed in the trench has high quality, whereby a gate withstanding voltage is improved.

Abstract: The pneumatic cylinder is fixed on between the lower member of the upper unit and the lower member of the lower unit. As the shaft of the pneumatic cylinder extends, the upper unit starts lowering by its own weight at first. When the upper unit reaches to the point limited by the stopper, the lower unit then starts rising and the lower unit stops in a state where the shaft has extended to its full length. In this state, the probes and are in contact with the printed wiring board as applying a specified pressure to it.

Abstract: A developer container containing a developer has a developer containing unit containing a developer and a sealing member supplied between a plurality of members to prevent a leak of the developer, said sealing member being a liquid elastomer, and, in an area in which said liquid elastomer is supplied, the supply amount in end portions being larger than the supply amount in an intermediate portion.

Abstract: In an LDMOS, an n-type region 6, which is formed to have a concentration higher than that of an n-type substrate 1 and whose concentration gradually increases from the n-type substrate 1 to an n+-type drain region 5, is disposed so as to surround the n+-type drain region 5. Further, a p+-type contact region 9 disposed adjacent to an n+-type source region 8 is formed so as to extend below the n+-type source region 8 so that a parasitic transistor formed by the n+-type source region 8, a p-type base region 7 and the n-type substrate 1 is hardly turned ON.

Abstract: A semiconductor substrate has a trench for forming a gate insulation film and a gate electrode therein, or an insulated isolation isolating a semiconductor element like a transistor from other elements. The trench is formed by anisotropic dry etching. After that, a shape of the trench is improved so that a bottom portion and an opening portion are rounded or tapered by a wet process using a mixed solution containing hydrofluoric acid and nitric acid. By modifying the shape of the trench, electrical characteristics of the trench are improved. For example, an oxide film formed in the trench has high quality, whereby a gate withstanding voltage is improved.

Abstract: By improving profile of impurity concentration in a channel portion of an FET or an IGBT of a trench gate type, variation of threshold value is lessened, and a destruction caused by current concentration is prevented while suppressing deterioration of cut-off characteristics. An island of a base region of p-type is formed in a semiconductor substrate of n-type by carrying out high acceleration ion implantation twice followed by annealing, so that the impurity concentration profile in a channel portion changes gradually in a depth direction. Accordingly, it is possible to lessen variation of the threshold value and to reduce pinch resistance while at the same time improving sub-threshold voltage coefficient and conductance characteristics.

Abstract: First, a trench of a semiconductor substrate is filled with a polysilicon film deposited on the surface of the semiconductor substrate. A selective thin film having etching selectivity with respect to the polysilicon film is formed on the polysilicon film. Then, the selective thin film is etched (etched back) so that a part of the selective thin film remains in a depression of the polysilicon film, as a self-aligning mask. The polysilicon film is further etched with the self-aligning mask, thereby forming a polysilicon embedded layer in the trench with a flat surface.