Patents by Inventor Masatoshi Nishimoto

Masatoshi Nishimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Artificial quartz crystal growth method
    Patent number: 9976232
    Abstract: An artificial quartz crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped quartz crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the quartz crystal substrates aligned with each other, and causing the at least two quartz crystal substrates to grow an artificial quartz crystal in a state where the pressure is being applied.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: May 22, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Masatoshi Nishimoto, Yu Shirai, Sugao Yamaguchi, Takumi Shitara
  • ARTIFICIAL CRYSTAL GROWTH METHOD
    Publication number: 20160160389
    Abstract: An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the pressure is being applied.
    Type: Application
    Filed: February 18, 2016
    Publication date: June 9, 2016
    Inventors: MASATOSHI NISHIMOTO, Yu Shirai, Sugao Yamaguchi, Takumi Shitara
  • Artificial quartz member, process for producing the same, and optical element comprising the same
    Patent number: 8257675
    Abstract: An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.
    Type: Grant
    Filed: December 16, 2008
    Date of Patent: September 4, 2012
    Assignees: Tokyo Denpa Co., Ltd., Asahi Glass Company, Limited
    Inventors: Noriyuki Agata, Shinya Kikugawa, Yutaka Shimizu, Kazumi Yoshida, Masatoshi Nishimoto
  • ARTIFICIAL QUARTZ MEMBER, PROCESS FOR PRODUCING THE SAME, AND OPTICAL ELEMENT COMPRISING THE SAME
    Publication number: 20090104103
    Abstract: An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.
    Type: Application
    Filed: December 16, 2008
    Publication date: April 23, 2009
    Applicants: Tokyo Denpa Co., Ltd., Asahi Glass Company, Limited
    Inventors: Noriyuki AGATA, Shinya KIKUGAWA, Yutaka SHIMIZU, Kazumi YOSHIDA, Masatoshi NISHIMOTO