Abstract: There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.

Abstract: A voice input device includes a first microphone (710-1) that includes a first diaphragm, a second microphone (710-2) that includes a second diaphragm, and a differential signal generation section (720) that generates a differential signal that indicates a difference between a first voltage signal and a second voltage signal, the first diaphragm and the second diaphragm being disposed so that a noise intensity ratio is smaller than an input voice intensity ratio (input voice component intensity ratio), and the differential signal generation section (720) including a gain section (760) that amplifies the first voltage signal by a predetermined gain, and a differential signal output section (740) that generates and outputs a differential signal that indicates a difference between the first voltage signal amplified by the gain section and the second voltage signal.

Abstract: An integrated circuit device includes a circuit board (1200?), the circuit board including a first diaphragm (714-1) that forms a first microphone, a second diaphragm (714-2) that forms a second microphone, and a differential signal generation circuit (720) that receives a first voltage signal obtained by the first microphone and a second voltage signal obtained by the second microphone, and generates a differential signal that indicates a difference between the first voltage signal and the second voltage signal.

Abstract: Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.

Abstract: A voice input device includes a first microphone (710-1) that includes a first diaphragm, a second microphone (710-2) that includes a second diaphragm, and a differential signal generation section (720) that generates a differential signal that indicates a difference between a first voltage signal and a second voltage signal, the first diaphragm and the second diaphragm being disposed so that a noise intensity ratio is smaller than an input voice intensity ratio (input voice component intensity ratio), and the differential signal generation section (720) including a delay section (730), and a differential signal output section (740) that generates and outputs a differential signal based on a signal delayed by the delay section.

Abstract: A link mechanism arranged between a fixed base and a movable base. The mechanism includes a drive gear reducer, a first arm, a second arm, a connection base, a first link, and a second link. The drive gear reducer includes a body, an input shaft, a first output shaft, and a second output shaft. The first arm is connected to the fixed base and the body of the reducer. The second arm is connected to the second output shaft and the movable base. The connection base is arranged such that the second arm is between the connection base and the reducer, the connection base is connected to the first output shaft. The first link is connected to the fixed base and the connection base. The second link is connected to the connection base and the movable base.

Abstract: An enzyme electrode having excellent sensitivity, excellent stability, and a longer operating life, and an enzyme sensor using the enzyme electrode are provided. The enzyme electrode includes an electrode 2, a mesoporous silica material 3 formed on the electrode 2, and enzyme 4 immobilized in a small cavity of the mesoporous silica material 3. The size of the small cavity of the mesoporous silica material 3 is set to be 0.5 to 2.0 times the size of the enzyme 4.

Abstract: A parallel link mechanism arranged between a fixed base and a movable base includes a harmonic drive gear reducer, a first arm, a second arm, a connection base, a first auxiliary link, and a second auxiliary link. The harmonic drive gear reducer has a body, an input shaft, a first output shaft, and a second output shaft. The first arm has a proximal end pivotally connected to the fixed base and a distal end connected to the body of the reducer. The second arm has a proximal end connected to the second output shaft and a distal end pivotally connected to the movable base. The connection base is arranged outside the second arm with respect to the reducer and connected to the first output shaft. The first auxiliary link is arranged parallel with the first arm and has an end pivotally connected to the fixed base and an end pivotally connected to the connection base.

Abstract: Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the first bit line to connect it to the sense amplifier, specifying the word line and supplying a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the word line voltage becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.

Abstract: Disclosed is a memory cell array including: word lines and first and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and a switching element formed inside a contact hole, the switching element includes first and second conductive layers and a gap in which a resistance value is changed by applying a predetermined voltage, each word line is connected to a gate electrode, each first bit line is connected to a second electrode, each second bit line is connected to the second conductive layer, and data is written by supplying a write voltage to the first bit line connected to the selected memory cell and specifying the word line connected to the memory cell, and data is read by supplying a read voltage to the first bit lines connected to the memory cell and specifying the word line connected to the memory cells.

Abstract: Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the word line, and specifying the first bit line to supply a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the voltage of the word line becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.

Abstract: A microphone unit is disposed in the inside of a first housing of a voice input apparatus. The microphone unit includes: a second housing; a diaphragm which is disposed in the inside of the second housing; and an electric circuit portion which processes an electric signal that is generated based on a vibration of the diaphragm. In the voice input apparatus, a first sound guide space which guides a sound outside the first housing to a first surface of the diaphragm and a second sound guide space which guides a sound outside the first housing to a second surface of the diaphragm are formed. The electric circuit portion is disposed in either one of the first sound guide space and the second sound guide space; and an acoustic resistance portion which adjusts at least one of a frequency characteristic of the first sound guide space and a frequency characteristic of the second sound guide space is formed.

Abstract: A microphone unit includes: a housing; a diaphragm which is disposed in the inside of the housing; and an electric circuit portion which processes an electric signal that is generated based on a vibration of the diaphragm. In the housing, a first sound guide space which guides a sound outside the housing to a first surface of the diaphragm via a first sound hole and a second sound guide space which guides a sound outside the housing to a second surface, that is, an opposite surface of the diaphragm via a second sound hole are formed. The electric circuit portion is disposed in either one of the first sound guide space and the second sound guide space; and an acoustic resistance portion which adjusts at least one of a frequency characteristic of the first sound guide space and a frequency characteristic of the second sound guide space is formed.

Abstract: Disclosed is a memory element array comprising a plurality of memory elements arranged in an array, wherein the memory elements are switching elements each including a gap of nanometer order in which a switching phenomenon of resistance is caused by applying a predetermined voltage between electrodes, and the memory element array is provided with tunnel elements respectively connected to the switching elements in series, each of the tunnel elements preventing generation of a sneak path current flowing to another switching element at a time of applying the predetermined voltage.

Abstract: A horizontal articulated robot includes a base, a first arm provided rotatably around a first rotation axis on the base, a second arm provided rotatably around a second rotation axis on the first arm, the second rotation axis being parallel to the first rotation axis, and a main shaft provided in the second arm to be extended in a direction parallel to the second rotation axis. A distance between the second rotation axis and the main shaft is shorter than a length of a straight line connecting the first and the second rotation axes. Additionally, the first arm has a recessed portion formed so as to include a position on a rotation path where a rotation radius around the second rotation axis is equivalent to the distance between the second rotation axis and the main shaft.

Abstract: A translation system including: a bilingual data storage section, a plurality of pieces of first language simple sentence data and a plurality of pieces of second language simple sentence data being stored in the bilingual data storage section while being associated with each other so that the first language simple sentences and the second language simple sentences respectively make pairs; and a target language simple sentence data output section which outputs target language simple sentence data corresponding to a target language simple sentence which is a translation of a given source language simple sentence based on source language simple sentence data corresponding to the source language simple sentence.

Abstract: A microphone unit includes a microphone substrate. A plurality of diaphragm units are disposed on the microphone substrate. Each of the diaphragm units includes a diaphragm. A plurality of partition walls are disposed on the microphone substrate. Each of the partition walls surrounds the diaphragm so as to define a first area. A signal processor is disposed at a second area outside the first area and is configured to process signals output from the diaphragm units.

Abstract: A microphone unit includes a substrate. The substrate includes a first face formed with a first recess, a second face opposite to the first face, and a through hole communicating the second face to a bottom part of the first recess. A diaphragm unit includes a diaphragm, and at least a part of which is disposed in the first recess so that the diaphragm opposes the through hole.

Abstract: A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm<C?50 nm.

Abstract: A microphone unit includes: a partition member, including a vibration film configured to be vibrated by sound; a housing, defining an inner space, and formed with a first opening and a second opening, the inner space being divided into a first space and a second space by the partition member, the first space adapted to be communicated with an outer space via the first opening, and the second space adapted to be communicated with the outer space via the second opening; and a shutter, configured to close one of the first and second openings; and an amplifier, configured to: amplify an electric signal at a first gain when the shutter closes the one of the first and second openings; and amplify the electric signal at a second gain that is larger than the first gain when first and second openings are opened.