Abstract: The present invention relates to an optical element including an optical surface, a tapered part located on an outer peripheral side of the optical surface and having a normal line of which a direction heading to an outside of the optical element from an inside thereof, faces an optical axis side, and a side surface part located on an outer peripheral side of the tapered part, in which when a distance in a straight line vertical to an optical axis of from an end point on the optical axis side of the tapered part to the side surface part is denoted by A and a height of the tapered part based on the straight line is defined by B, in a cross section including the optical axis and passing through the tapered part, B/A is larger than 0.2.

Abstract: The present invention relates to an optical element including an optical surface, a tapered part located on an outer peripheral side of the optical surface and having a normal line of which a direction heading to an outside of the optical element from an inside thereof, faces an optical axis side, and a side surface part located on an outer peripheral side of the tapered part, in which when a distance in a straight line vertical to an optical axis of from an end point on the optical axis side of the tapered part to the side surface part is denoted by A and a height of the tapered part based on the straight line is defined by B, in a cross section including the optical axis and passing through the tapered part, B/A is larger than 0.2.

Abstract: An optical waveguide film is provided having a cross-sectional structure wherein claddings composed of a thermoplastic resin B and dispersions (cores) composed of a thermoplastic resin A extend in the machine direction of the film and are arrayed in the transverse direction of the film, the optical waveguide film comprising not less than 3 cores, diameters (We1, We2) of cores located at the both ends in the transverse direction of the film and diameter (Wc) of a core in the central portion in the transverse direction of the film satisfying the following Formulae (1) and (2), the optical waveguide film comprising a continuous cladding layer at at least one side thereof, the thicknesses of the cladding layers (Te1, Te2) at the both ends thereof in the transverse direction of the film and the thickness (Tc) of the cladding layer in the central portion in the transverse direction of the film satisfying the following Formulae (3) and (4): 0.8?We1/Wc?1.2??Formula (1) 0.8?We2/Wc?1.2??Formula (2) 0.8?Te1/Tc?1.

Abstract: An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

Abstract: The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas CxFy (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.

Abstract: An optical waveguide film is provided having a cross-sectional structure wherein claddings composed of a thermoplastic resin B and dispersions (cores) composed of a thermoplastic resin A extend in the machine direction of the film and are arrayed in the transverse direction of the film, the optical waveguide film comprising not less than 3 cores, diameters (We1, We2) of cores located at the both ends in the transverse direction of the film and diameter (Wc) of a core in the central portion in the transverse direction of the film satisfying the following Formulae (1) and (2), the optical waveguide film comprising a continuous cladding layer at least one side thereof, the thicknesses of the cladding layers (Te1, Te2) at the both ends thereof in the transverse direction of the film and the thickness (Tc) of the cladding layer in the central portion in the transverse direction of the film satisfying the following Formulae (3) and (4): 0.8?We1/Wc?1.2??Formula (1) 0.8?We2/Wc?1.2??Formula (2) 0.8?Te1/Tc?1.

Abstract: It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being possibly deteriorated as a result of excessive polymer deposition in the initial etching stage. The insulating film dry etching method is for treating a work on which a mask of elliptic pattern is formed with a fluorocarbon gas, wherein the etching process is divided into a first and second steps after the etching is started, the first step operating to deposit a polymer at a rate set lower than that in the second step, and controlling step time in accordance with ellipticity (long diameter/short diameter ratio) of the elliptic pattern.

Abstract: An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

Abstract: It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being possibly deteriorated as a result of excessive polymer deposition in the initial etching stage. The insulating film dry etching method is for treating a work on which a mask of elliptic pattern is formed with a fluorocarbon gas, wherein the etching process is divided into a first and second steps after the etching is started, the first step operating to deposit a polymer at a rate set lower than that in the second step, and controlling step time in accordance with ellipticity (long diameter/short diameter ratio) of the elliptic pattern.

Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.

Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.

Abstract: A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor. In the surface processing apparatus, which uses a plasma, a deposition gas is added to a light element of hydrogen as the etching gas. Ions accelerated by a bias electric power supply accelerate etching reaction. Sputtering at edges of the mask can be reduced by using the light element of hydrogen as the etching gas, and the selective ratio of the anti-reflective film to the masking material can be increased by mixing the deposition gas with the hydrogen.

Abstract: A plasma processing apparatus capable of extending a period of maintenance and continuing stable processing is provided. The apparatus comprises a vacuum reactor 1 having a processing gas introduction device and a evacuating device, a shield electrode 14 formed on the outer circumferential wall of the vacuum reactor, and a specimen placing device 101 having an antenna electrode 51 for radiating high frequency power into the vacuum reactor, in which first high frequency power is supplied to the antenna electrode, and high frequency power at a frequency lower than that of the first high frequency power is supplied to the antenna electrode 51 and the shield electrode 15.

Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.

Abstract: A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor.

Abstract: A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor.