Abstract: The present invention relates to a field-emission display having a faceplate formed with a phosphor layer and means irradiating an electron beam onto the phosphor layer in order to improve the characteristic of life of the device. The feature of the present invention is in the structure of a phosphor layer. The phosphor layer is expressed by a general formula: ZnS: M, Al where M is an activator of at least one of Cu, Ag and Au; and Al is a coactivator, in which the concentration of Al is higher than that of M. According to the present invention, the electrification characteristic of the phosphor is improved for lower resistance. The defect concentration of the surface of the phosphor is reduced. The filed-emission display which can realize improvement in the characteristic of life which has not been solved in the prior art can be made.

Abstract: A phosphor having the following formula: (Ba1-a-b-cCaaSrbMc)O.xMgO.yAl2O3 wherein M is at least one element selected from Eu, Tm, Lu and Mn, and a, b, c, x and y satisfy the following conditions: 0<a≦0.01, 0<b≦0.01, 0.01≦c≦0.3, 0≦x≦2.2, and 0≦y≦12.0; emits visible light under excitation by ultraviolet light of 100 nm to 400 nm. The phosphor is useful in display devices and light sources.

Abstract: A white light source includes an ultraviolet-visible excitation light generation unit capable of generating visible light and ultraviolet light, and a fluorescence generation unit having a phosphor layer and being capable of generating visible light upon excitation by the ultraviolet light and uses, in the phosphor layer, a red light emitting phosphor represented by the following compositional formula: (Ca1−a−bSraEub)S:Mc, wherein a, b and c satisfy the following conditions: 0≦a<1.0, 0≦b<0.1 and 0≦c≦0.1; and M is a dopant element having absorption of excitation energy at about 350 nm to about 500 nm. The dopant element M includes rare earth elements such as Ce, Yb, Gd and Tm. By substituting part of Ca and/or Sr with Zn, the white light source can exhibit further improved performances.

Abstract: Rare earth phospho-vandate phosphors containing at least one element of Group IV of the periodic table have spherical or cubic shaped particles and provide higher brightness and longer brightness life, and effective for use in display systems and light emitting systems.

Abstract: The present invention provides a green emitting phosphor which includes an excess of the ordinary SiO2 component included in parent material Y2-2xSiO5 activated by Tb in terms of stoichiometric ratio.

Abstract: The present invention provides a plasma display device, a luminescent device, and an image display system each having an excellent moving-image quality, a long lifetime, and high performance. The plasma display device has a plasma display panel having at least a pair of substrates, a discharge gas space formed between the pair of substrates, electrodes formed on the respective opposing surfaces of the substrates, and a phosphor layer formed on the surface of one of the pair of substrates in contact with the discharge gas space and a driver circuit for driving the panel via the electrodes. In the plasma display device, the decay time ({fraction (1/10)} decay time) of light generated from each of the phosphor layers for providing red, green, and blue emission which compose the phosphor layer is not more than 8 ms.

Abstract: A field-emission display apparatus includes a faceplate on which a phosphor layer is formed, and a means for irradiating electron beam onto the phosphor layer and the phosphor layer is constituted by phosphors formed by mixing main phosphors with small particle phosphors, the averaged particle diameter of which is smaller than ½ of an averaged particle diameter of the main phosphors, enhancing the filing density of the phosphor layer and also enhancing both a lifetime characteristic and a luminescent characteristic of the phosphor layer.

Abstract: The luminance of phosphor is enhanced by forming a phosphor screen of a fluorescence generation unit by phosphor expressed by the following composition formula and a display using a white light the luminescent color of which is improved and which has an excellent characteristic is acquired.

Abstract: A plasma display includes a display panel and a driving circuit for driving the display panel. A space for at least one color, of spaces between barrier ribs for defining discharge spaces for red, green and blue colors of the display panel is different from the spaces for other colors.

Abstract: In an operation of an address period for addressing cells of a display device, such as a plasma display panel, comprising a plurality of cells of three kinds, red (R), green (G), blue (B), which are arranged on a plane for forming a display surface thereof, in which each of said cells comprising: a pair of transparent electrodes provided in parallel to each other; an address electrode being positioned opposing the pair of transparent electrodes; luminescence medium provided on the address electrode; and a discharge space being defined between the pair of transparent electrodes and said fluorescence medium on the address electrode, wherein the address discharge is conducted by applying an address voltage to the address electrode, and the address voltage applied is determined depending upon the each kind of the cells, R, G and B.

Abstract: A plasma display includes a display panel and a driving circuit for driving the display panel. A space for at least one color, of spaces between barrier ribs for defining discharge spaces for red, green and blue colors of the display panel is different from the spaces for other colors.

Abstract: Green-emitting phosphor having a composition formula represented by (Y1-x-aGdxMa)3-3yTb3y(Al1-zGaz)5O12, where 0<x≦1, 0≦a<1, 0<x+a≦1, 0<y<1 and 0≦z≦1 and M is at least one of Sc, Yb and La, improves emission color of phosphors of Y3(Al, Ga)5O12:Tb series, and in case that y=0.07, z=0.4 and a=0 in the foregoing composition, color y is increased with increasing Gd concentration, when Gd concentration x is changed, and the emission color becomes clear green.

Abstract: A phosphor emitting a visible light under an exciting light composed mainly of ultraviolet light of 100 nm to 400 nm, which is represented by the following composition formula:

Abstract: The current coefficient and saturation brightness of a phosphor is increased by coating the surfaces of phosphor particles (11, 21, 41) constituting a powdered phosphor with layers (12, 22, 42), preferably composed of phosphor, of 5 .mu.m, or less in thickness. A cathode-ray tube using this phosphor has a high luminance and/or a high resolution. If the above phosphor contains phosphor particles covered with electrically conductive phosphor and is used for an electroluminescence device or a vacuum fluorescent display, the life time and stability are improved.

Abstract: To provide a stable phosphor with a high brightness and little luminous degradation, a phosphor comprises yttrium, aluminum (a part or the whole of aluminum may be replaced with gallium), and oxygen as basic constituting elements, Tb or Ce as an activator, and the garnet structure as a crystal structure and in the curve 1-1 showing the temperature dependency of the thermoluminescence intensity, the integrated intensity of the thermoluminescence peak in the temperature range from 300K to 700K is made smaller than the integrated intensity of the thermoluminescence peak in the temperature range of less than 300K.

Abstract: A semiconductor emitting device is provided which is capable of emitting a blue light and, which comprises a double hetero junction structure having first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. First and second electrodes are respectively formed on the first and second clad layers. ZnSSe thin films of low-resistivity are preferably used as the first and/or clad second layers, while a ZnSTe film can be used as the active layer.

Abstract: A semiconductor emitting device is provided which is capable of emitting a blue light. The device includes a first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. A nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1.times.10.sup.16 cm.sup.-3 and a resistivity of not more than 10 .OMEGA.-cm is used as the first clad layer or the second clad layer.

Abstract: Strained-layer superlattices are formed on a substrate by alternately and epitaxially laminating a plurality of first compound semiconductor layers each of which is composed of a II-Vi compound semiconductor and second compound semiconductor layers each of which is composed of a II-VI or III-V compound semiconductor having a smaller lattice constant than the compound semiconductor of the first compound semiconductor layer. A first conduction type impurity diffusion region is formed in at least each layer surface of the first compound semiconductor layers, and a second conduction type region is so formed as to be adjacent to the first conduction type impurity diffusion region directly or through an undoped region. Electrodes are provided on the end side surfaces of the respective regions. The thus-obtained compound semiconductor light emitting device efficiently emits light in the visible region including green to blue wavelength region.

Abstract: A method of growing zinc chalcogenide in an atmosphere which contains the vapor of di-.pi.-cyclopentadienyl manganese or di-.pi.-alkyl cyclopentadienyl manganese that serves as a source of manganese. By growing zinc chalcogenide in the above atmosphere, there is obtained a manganese-doped zinc chalcogenide having a very high crystal quality, which is very suitable for the active layer in light emitting devices.

Abstract: A semiconductor optical apparatus of the invention has a quantum well super-lattice structure essentially of only direct transition semiconductor or comprising a direct transition semiconductor and an indirect transiton semiconductor. In the semiconductor optical apparatus of the invention, by using an absorption saturation phenomenon of excitions in the direct transition semiconductor constructing the quantum well super-lattice structure, a non-volatile information recording apparatus which can record, reproduce, and erase information at a high speed even at the room temperature or even by irradiating a light of a low intensity is realized.