Abstract: A liquid crystal display apparatus which has a large pixel aperture ratio, a high luminance and good yield without causing any signal delay on wiring or increasing any driving voltage. In a structure in which a capacity is formed on a superimposed part of a common signal electrode CE and at least one of a data signal wiring DL and a scanning signal wiring GL via an interlayer insulating film PAS, of insulating films included in the interlayer insulating film PAS, at least a layer OIL1 is selectively formed at least on a part of a region on a pixel electrode PX.

Abstract: When an active matrix display device using a thin film transistor as a switching element in the displaying portion or driving portion is characterized in that said thin film transistor comprises an insulating substrate on which a gate electrode, a gate insulating film, a semiconductor layer, a drain electrode, a source electrode and a passivation film are successively laminated, and the surface portion of the semiconductor layer on the side of the passivation film is porous, the device can be stably driven with low off-current even in the case of disposing an organic passivation film and a picture element electrode on the thin film transistor.

Abstract: A gate electrode, a gate insulating layer, a semiconductor layer, a drain electrode, a source electrode and a passivation insulating layer are fabricated in turn on an insulating substrate, thereby forming a thin film transistor. The thin film transistor is designed in such a way that a silicon oxide film is employed as a second gate insulating layer adjacent to the semiconductor layer; a thickness of the silicon oxide film is set to the range of 0.5 to 3.0 nm; and it shows the characteristics in which when a stress voltage which is negative with respect to the drain electrode and the source electrode is applied to the gate electrode, the operating threshold voltage is reduced.

Abstract: A normally closed liquid crystal display device using an in-plane switching mode prevented from light leakage caused by spacer beads and having a high contrast ratio can be produced by making a pretilt angle between an alignment control film and liquid crystals 4° or less and controlling a light leakage centering the spacer in 4-divided shapes; or by placing a film provided with a liquid crystal alignment controlling function by irradiation with polarized light between the spacer and a liquid crystal layer, the spacer being present in a pair of substrates.

Abstract: The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.

Abstract: There is provided a liquid crystal display device in which light leaks near spacers are prevented. The liquid crystal display device controls the optical transmissivity of a liquid crystal layer interposed between substrates disposed in opposition to each other, by means of an electric field generated in the layer-thickness direction of the liquid crystal layer, includes spacers formed on a liquid-crystal-side surface of one of the substrates, signal lines formed on a liquid-crystal-side surface of the other substrate, an insulating film formed to cover the signal lines, and electrodes formed on the upper surface of the insulating film, each of which serves as one electrode contributing to control of the optical transmissivity of the liquid crystal layer.

Abstract: An active matrix liquid crystal display device is provided for realizing a high uniformity of display luminance with lower power consumption, a higher contrast, and a wider viewing angle. In a common wire eliminated (common-less) IPS-type active matrix liquid crystal display device, an opposing electrode 107 is arranged above a signal wire 104 and a thin film transistor (TFT) through an insulating layer. The opposing electrode 107 and a scanning wire 101 shield the signal wire 104 or the TFT to prevent light from leaking from edge portions of the signal wire 104 as well as the TFT from malfunctioning due to a current generated by leaked light, thereby realizing the elimination of a black matrix (BM), a reduction in size of a black matrix, and planarized substrates, thus resulting in a higher aperture ratio and an improved uniformity of cell gap.

Abstract: The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Abstract: The present invention provides a thin film transistor, wherein the semiconductor channel region is patterned. Gate electrodes 102, gate insulating film 103, source electrodes 104, and drain electrodes 105 are formed on a glass substrate 101. A patterned insulating film is formed thereon, and a part of the film in the region 110 on the gate electrode is removed. An organic semiconductor film is formed thereon by vapor deposition. The organic semiconductor film 107 in the region 110, where the patterned insulating film is removed, becomes a channel region, and is separated from the organic semiconductor film 108 on the patterned insulating film 106. Therefore, the organic semiconductor channel region is patterned to have the same size as the gate electrode. In accordance with the present invention, a thin film transistor, wherein the semiconductor region is patterned precisely, becomes available.

Abstract: A liquid crystal display device includes a pair of substrates, a liquid crystal layer supported between the pair of substrates, a plurality of gate electric wirings provided on one of the pair of substrates, a plurality of drain electric wirings respectively intersecting with the plurality of gate electric wirings in a matrix configuration, a plurality of thin film transistors formed on respective points of the gate electric wirings and the drain electric wirings, a plurality of common electric wirings extending in the same direction as the gate electric wirings, a plurality of picture elements with at least one of the picture elements being respectively surrounded by the gate electric wirings and the drain electric wirings, and a plurality of counter electrodes connected to the common electric wirings and extending in the same direction as the drain electric wirings.

Abstract: A thin film transistor used as a switching element of an active matrix type liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film formed over a scanning electrode, an insulating layer formed on the silicon nitride film, and a semiconductor layer having a source region and a drain region formed on the insulating layer. The thin film transistor has a threshold voltage higher than the maximum value of the liquid crystal operating voltage. The insulating layer is a silicon oxide film having a thickness of 30 Å or more.

Abstract: A liquid crystal display device has a plurality of gate electric wirings provided on one of a pair of substrates, a plurality of drain electric wirings which respectively intersect with the plurality of gate electric wirings in a matrix state, a plurality of thin film transistors formed on respective intersecting points of the drain electric wirings and the gate electric wirings, a plurality of common electric wirings extending in the same direction as the gate electric wirings, a plurality of picture elements, at least one of the picture elements being respectively surrounded by the gate electric wirings and the drain electric wirings, a plurality of counter electrodes connected to the common electric wirings and extending in the same direction as the drain electric wirings, and a plurality of the picture element electrodes connected to the thin film transistors and extending in the same direction as the counter electrode corresponding to respective picture elements, in which the respective counter electrode

Abstract: A liquid crystal display device can be fabricated through simplified processes, and provide a high product yield and excellent picture displaying characteristic. The liquid crystal display device includes a first substrate having thereon a plurality of drain wirings, a plurality of gate wirings crossing the plurality of drain wirings in a matrix array, a plurality of thin film transistors disposed in the vicinity of these crossings, and a plurality of pixel electrodes connected to the thin film transistors, respectively. A second substrate is disposed in opposing relation to the first substrate, and a liquid crystal layer is sandwiched between these substrates. Each terminal portion of the plurality of drain wirings and plurality of gate wirings is constructed with a metallic film covered with a transparent conductive film.

Abstract: An electrophotographic photoreceptor comprising a photoconductive layer comprising a photoconductor, a support for the photoconductive layer and a surface layer formed on the photoconductive layer and comprising a curable resin film and an inorganic insulator pieces having a size larger than the film thickness of the curable resin film. In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces have protruded from the curable resin film. Since the curable resin is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces prevent the abrasion of the resin, the surface layer having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized.

Abstract: An electrophotographic photosensitive element, e.g. for a photocopier or laser printer, comprises a substrate and a plurality of layers on the substrate including a photoconductive layer of a-Si:H and a protective and lubricating layer which is outermost from said substrate. To provide wear resistance and long life-time of the protective and lubricating layer, this layer comprises a microporous solid material having a pore structure which extends substantially over the whole thickness of the material and a hydrophobic lubricant carried by said solid material. The lubricant includes a liquid film and often times a non-particulate solid film, and provides at least part of the outer surface of the element and is present also in the pores of said microporous solid material.

Abstract: An electrophotographic member comprising a support, a photoconductive layer formed thereon, and a surface layer formed thereon, said surface layer including or attaching a lubricating agent having a perfluoropolyoxyalkyl or perfluoropolyoxyalkylene group to form an organic surface protective lubricating layer, and a fixing group to be fixed to the surface layer, is excellent in moisture resistance, wear resistance and cleaning properties and thus useful in an electrophotographic apparatus with a long life and high reliability.