Abstract: The magnetic recording medium includes: a non-magnetic support; and a magnetic layer including a ferromagnetic powder and a binding agent on the non-magnetic support, in which the magnetic layer further includes a compound including a polyalkyleneimine chain and a vinyl polymer chain. The composition for a magnetic recording medium includes: ferromagnetic powder; and a compound including a polyalkyleneimine chain and a vinyl polymer chain.

Abstract: The magnetic recording medium includes: a non-magnetic support; and a magnetic layer including a ferromagnetic powder and a binding agent on the non-magnetic support, in which the magnetic layer further includes a compound including a polyalkyleneimine chain and a vinyl polymer chain. The composition for a magnetic recording medium includes: ferromagnetic powder; and a compound including a polyalkyleneimine chain and a vinyl polymer chain.

Abstract: The magnetic recording medium includes: a non-magnetic support; and a magnetic layer including a ferromagnetic powder and a binding agent on the non-magnetic support, in which the magnetic layer further includes a compound including a polyalkyleneimine chain and a vinyl polymer chain. The composition for a magnetic recording medium includes: ferromagnetic powder; and a compound including a polyalkyleneimine chain and a vinyl polymer chain.

Abstract: An m-phenylenediamine compound is represented by the following General Formula (I), (II), or (III). R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group. R2, R3, and R4 each represent an alkyl group. R5 and R6 each represent an alkyl group. X represents a chlorine atom or a bromine atom. A method for producing a polymer compound includes obtaining a polymer compound by using the m-phenylenediamine compound represented by General Formula (I) as a raw material.

Abstract: The curing agent for a magnetic recording medium includes a compound represented by General Formula 1. In General Formula 1, X represents a monovalent heterocyclic group or a monovalent group represented by General Formula 2, Z represents an m-valent organic group, and m represents an integer of 2 or more. In General Formula 2, R1 represents an alkyl group, R2 represents a hydrogen atom, an alkyl group, or an aryl group, and * represents a bonding site with an adjacent carbon atom.

Abstract: The magnetic recording medium includes: a non-magnetic support; and a magnetic layer including a ferromagnetic powder and a binding agent on the non-magnetic support, in which the magnetic layer further includes a compound including a polyalkyleneimine chain and a vinyl polymer chain. The composition for a magnetic recording medium includes: ferromagnetic powder; and a compound including a polyalkyleneimine chain and a vinyl polymer chain.

Abstract: An m-phenylenediamine compound is represented by the following General Formula (I), (II), or (III). R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or an aryl group. R2, R3, and R4 each represent an alkyl group. R5 and R6 each represent an alkyl group. X represents a chlorine atom or a bromine atom. A method for producing a polymer compound includes obtaining a polymer compound by using the m-phenylenediamine compound represented by General Formula (I) as a raw material.

Abstract: A gas separation membrane includes a gas separation layer containing a polyimide compound, and the polyimide compound has a repeating unit represented by Formula (I). The gas separation module, the gas separation device, and the gas separation method are obtained by using the gas separation membrane, Ra represents a specific tetravalent group, Rb represents a trivalent group having a specific ring, Xa represents a specific substituent, and Xb represents a hydrogen atom or a substituent. A polyimide compound represented by Formula (I-b) or (I-c), Ra represents a specific tetravalent group, Rc represents a specific divalent group, Aa, Ab, Ac, and Xb represent a hydrogen atom or a substituent, and Xc and Xd represent a specific substituent.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: A gas separation membrane includes a gas separation layer containing a polyimide compound and the polyimide compound has a repeating unit represented by Formula (I). In Formula (I), Rf1, Rf4, Rf5, and Rf8 each independently represent an alkyl group. Rf2, Rf3, Rf6, Rf7, and Rf9 to Rf16 each independently represent a hydrogen atom or a substituent, and at least one of Rf2, Rf3, Rf6, Rf7, and Rf9, . . . , or Rf16 represents a specific polar group. A represents a single bond or a divalent linking group having a specific structure. R represents a mother nucleus having a specific structure.

Abstract: An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: An object of the present invention is to provide an organic thin film transistor that has an organic semiconductor film manufactured by using a compound having excellent solubility to an organic solvent and that has excellent carrier mobility, a novel compound, an organic thin film transistor material, an organic semiconductor film, an organic thin film transistor composition, and a method of manufacturing an organic thin film transistor using this. The organic thin film transistor according to the present invention has an organic semiconductor film containing a compound represented by Formula (1).

Abstract: Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.

Abstract: Disclosed is a photosensitive resin composition comprising: (Component A) an oxime sulfonate compound represented by Formula (1); (Component B) a resin comprising a constituent unit having an acid-decomposable group that is decomposed by an acid to form a carboxyl group or a phenolic hydroxy group; and (Component C) a solvent wherein in Formula (1) R1 denotes an alkyl group, an aryl group, or a heteroaryl group, each R2 independently denotes a hydrogen atom, an alkyl group, an aryl group, or a halogen atom, Ar1 denotes an o-arylene group or an o-heteroarylene group, X denotes O or S, and n denotes 1 or 2, provided that of two or more R2s present in the compound, at least one denotes an alkyl group, an aryl group, or a halogen atom.

Abstract: The present invention aims to provide an optical recording medium that is provided with a recording layer for recording information by holography, has an uncomplicated laminate structure, is capable of performing recording and reproducing control such as tracking control and is capable of high-density multiple recording, as well as an optical recording method, an optical recording apparatus and an optical reproducing method. To this end, the present invention provides an optical recording medium which is a transmission medium for recording information based on a holographic principle using an information beam and a reference beam and performing tracking control using a servo beam, the medium including at least a first substrate, a recording layer, a filter layer that selectively reflects the servo beam, and a second substrate being disposed in this order as viewed from the light irradiation side of the information beam and the reference beam.

Abstract: The chiral agent used for liquid crystal according to the present invention comprises a phosphoric acid amide represented by General Formula (1) below: in General Formula (1), the binaphthyl structure has an axial asymmetry of either (R) or (S); R1 and R2 may be identical or different and each represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an alkenyl group, an alkynyl group or an alkoxy group; R3 and R4 may be identical or different and each represents a hydrogen atom, an alkyl group or an aryl group.