Patents by Inventor Masatsugu Amishiro
Masatsugu Amishiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130241067Abstract: The production of a crack in an insulating film under an external terminal of a semiconductor device due to external force applied to the external terminal is suppressed or prevented. Over the principal surface of a semiconductor substrate, there are formed multiple wiring layers. In the fifth wiring layer directly under the uppermost wiring layer of the wiring layers, the following measure is taken: a conductor pattern (fifth wiring, dummy wiring, and plug) is not formed directly under the probe contact area of each bonding pad PD in the uppermost wiring layer. In the fifth wiring layer, conductor patterns (fifth wiring, dummy wirings, and plugs) are formed in the areas other than directly under the probe contact area of each bonding pad in the uppermost wiring layer.Type: ApplicationFiled: April 30, 2013Publication date: September 19, 2013Applicant: Renesas Electronics CorporationInventors: Takeshi FURUSAWA, Takao KAMOSHIMA, Masatsugu AMISHIRO
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Publication number: 20120289032Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed. Over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11, insulating films 14, 15, 16 are formed. An opening is formed in those insulating films and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 to form the opening. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance. By interposing the insulating film 14 therebetween with a higher density of Si (silicon) atoms than the insulating film 11, an electrically weak interface is prevented from being formed.Type: ApplicationFiled: May 21, 2012Publication date: November 15, 2012Inventors: Takeshi FURUSAWA, Takao KAMOSHIMA, Masatsugu AMISHIRO, Naohito SUZUMURA, Shoichi FUKUI, Masakazu OKADA
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Patent number: 8203210Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.Type: GrantFiled: September 15, 2010Date of Patent: June 19, 2012Assignee: Renesas Electronics CorporationInventors: Takeshi Furusawa, Takao Kamoshima, Masatsugu Amishiro, Naohito Suzumura, Shoichi Fukui, Masakazu Okada
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Publication number: 20110001246Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.Type: ApplicationFiled: September 15, 2010Publication date: January 6, 2011Inventors: Takeshi FURUSAWA, Takao Kamoshima, Masatsugu Amishiro, Naohito Suzumura, Shoichi Fukui, Masakazu Okada
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Patent number: 7759975Abstract: A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.Type: GrantFiled: December 29, 2008Date of Patent: July 20, 2010Assignee: Hitachi, Ltd.Inventors: Fumio Murabayashi, Takashi Sase, Mutsumi Kikuchi, Atsuo Watanabe, Masatsugu Amishiro, Kenji Tabuchi
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Publication number: 20090184424Abstract: The production of a crack in an insulating film under an external terminal of a semiconductor device due to external force applied to the external terminal is suppressed or prevented. Over the principal surface of a semiconductor substrate, there are formed multiple wiring layers. In the fifth wiring layer directly under the uppermost wiring layer of the wiring layers, the following measure is taken: a conductor pattern (fifth wiring, dummy wiring, and plug) is not formed directly under the probe contact area of each bonding pad PD in the uppermost wiring layer. In the fifth wiring layer, conductor patterns (fifth wiring, dummy wirings, and plugs) are formed in the areas other than directly under the probe contact area of each bonding pad in the uppermost wiring layer.Type: ApplicationFiled: January 8, 2009Publication date: July 23, 2009Inventors: Takeshi Furusawa, Takao Kamoshima, Masatsugu Amishiro
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Publication number: 20090115506Abstract: A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.Type: ApplicationFiled: December 29, 2008Publication date: May 7, 2009Applicant: HITACHI, LTD.Inventors: Fumio Murabayashi, Takashi Sase, Mutsumi Kikuchi, Atsuo Watanabe, Masatsugu Amishiro, Kenji Tabuchi
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Patent number: 7522692Abstract: A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side circuits insulated from each other on a substrate and a capacitive insulating means to transfer signals between the primary and second sides while insulating and separating the primary side circuit from the secondary side circuit.Type: GrantFiled: March 7, 2007Date of Patent: April 21, 2009Assignee: Hitachi, Ltd.Inventors: Seigoh Yukutake, Yasuyuki Kojima, Minehiro Nemoto, Masatsugu Amishiro, Takayuki Iwasaki, Shinichiro Mitani, Katsuhiro Furukawa, Chiyoshi Kamada, Atsuo Watanabe, Takayuki Oouchi, Nobuyasu Kanekawa
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Patent number: 7479804Abstract: A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.Type: GrantFiled: August 7, 2006Date of Patent: January 20, 2009Assignee: Hitachi, Ltd.Inventors: Fumio Murabayashi, Takashi Sase, Mutsumi Kikuchi, Atsuo Watanabe, Masatsugu Amishiro, Kenji Tabuchi
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Publication number: 20080230847Abstract: The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.Type: ApplicationFiled: January 14, 2008Publication date: September 25, 2008Inventors: Takeshi Furusawa, Takao Kamoshima, Masatsugu Amishiro, Naohito Suzumura, Shoichi Fukui, Masakazu Okada
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Patent number: 7289553Abstract: A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side circuits insulated from each other on a substrate and a capacitive insulating means to transfer signals between the primary and second sides while insulating and separating the primary side circuit from the secondary side circuit.Type: GrantFiled: March 4, 2003Date of Patent: October 30, 2007Assignee: Hitachi, Ltd.Inventors: Seigoh Yukutake, Yasuyuki Kojima, Minehiro Nemoto, Masatsugu Amishiro, Takayuki Iwasaki, Shinichiro Mitani, Katsuhiro Furukawa, Chiyoshi Kamada, Atsuo Watanabe, Takayuki Oouchi, Nobuyasu Kanekawa
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Publication number: 20070153886Abstract: A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side circuits insulated from each other on a substrate and a capacitive insulating means to transfer signals between the primary and second sides while insulating and separating the primary side circuit from the secondary side circuit.Type: ApplicationFiled: March 7, 2007Publication date: July 5, 2007Inventors: Seigoh Yukutake, Yasuyuki Kojima, Minehiro Nemoto, Masatsugu Amishiro, Takayuki Iwasaki, Shinichiro Mitani, Katsuhiro Furukawa, Chiyoshi Kamada, Atsuo Watanabe, Takayuki Oouchi, Nobuyasu Kanekawa
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Patent number: 7102388Abstract: A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.Type: GrantFiled: February 4, 2003Date of Patent: September 5, 2006Assignee: Hitachi, Ltd.Inventors: Fumio Murabayashi, Takashi Sase, Mutsumi Kikuchi, Atsuo Watanabe, Masatsugu Amishiro, Kenji Tabuchi
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Patent number: 6977522Abstract: A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.Type: GrantFiled: December 15, 1999Date of Patent: December 20, 2005Assignee: Hitachi, Ltd.Inventors: Fumio Murabayashi, Takashi Sase, Mutsumi Kikuchi, Atsuo Watanabe, Masatsugu Amishiro, Kenji Tabuchi
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Publication number: 20030169808Abstract: A communication system is provided including a transceiver and an application controller to transmit and receive signals through the transceiver. An isolator which insulates and separates the transceiver and application controller includes primary and secondary side circuits insulated from each other on a substrate and a capacitive insulating means to transfer signals between the primary and second sides while insulating and separating the primary side circuit from the secondary side circuit.Type: ApplicationFiled: March 4, 2003Publication date: September 11, 2003Inventors: Seigoh Yukutake, Yasuyuki Kojima, Minehiro Nemoto, Masatsugu Amishiro, Takayuki Iwasaki, Shinichiro Mitani, Katsuhiro Furukawa, Chiyoshi Kamada, Atsuo Watanabe, Takayuki Oouchi, Nobuyasu Kanekawa
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Patent number: 6603807Abstract: An isolator is made monolithic by forming a capacitive insulating barrier using an interlayer insulation film on the semiconductor substrate to miniaturize the modem device by the monolithic isolator.Type: GrantFiled: February 26, 1999Date of Patent: August 5, 2003Assignee: Hitachi, Ltd.Inventors: Seigoh Yukutake, Yasuyuki Kojima, Minehiro Nemoto, Masatsugu Amishiro, Takayuki Iwasaki, Shinichiro Mitani, Katsuhiro Furukawa, Chiyoshi Kamada, Atsuo Watanabe, Takayuki Oouchi, Nobuyasu Kanekawa
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Publication number: 20030117751Abstract: A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.Type: ApplicationFiled: February 4, 2003Publication date: June 26, 2003Applicant: HITACHI, LTD.Inventors: Fumio Murabayashi, Takashi Sase, Mutsumi Kikuchi, Atsuo Watanabe, Masatsugu Amishiro, Kenji Tabuchi
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Patent number: 6563200Abstract: In an interface device in which by means of a buried insulation film 412 and a region insulation portion 410 an SOI substrate 414 is divided into a semiconductor support substrate region 411, a controller side region 407 and a network side region 408 and a part of isolator circuits 405 and 406 making use of a static capacitance are formed in the network side region 408, the semiconductor support substrate region 411 and the network side region 408 are connected to a network power source to always keep these regions at a same potential, thereby, an interface device using a dielectric isolation substrate which suppresses erroneous operations due to noises and characteristic deterioration, and a system using the same are provided.Type: GrantFiled: August 29, 2001Date of Patent: May 13, 2003Assignee: Hitachi, Ltd.Inventors: Mutsumi Kikuchi, Fumio Murabayashi, Takashi Sase, Atsuo Watanabe, Masatsugu Amishiro
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Publication number: 20020105062Abstract: In an interface device in which by means of a buried insulation film 412 and a region insulation portion 410 an SOI substrate 414 is divided into a semiconductor support substrate region 411, a controller side region 407 and a network side region 408 and a part of isolator circuits 405 and 406 making use of a static capacitance are formed in the network side region 408, the semiconductor support substrate region 411 and the network side region 408 are connected to a network power source to always keep these regions at a same potential, thereby, an interface device using a dielectric isolation substrate which suppresses erroneous operations due to noises and characteristic deterioration, and a system using the same are provided.Type: ApplicationFiled: August 29, 2001Publication date: August 8, 2002Inventors: Mutsumi Kikuchi, Fumio Murabayashi, Takashi Sase, Atsuo Watanabe, Masatsugu Amishiro