Abstract: To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor 1 has reactor upper body 2 and reactor lower body 3 that can be vertically detached, and reactor lower body 3 is movable in up-and-down and left-right directions.

Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

Abstract: An adhesive transfer device can reliably transfer by simple operation an adhesive onto a transfer target surface by either of spot-like transfer and linear transfer that are alternately selected. The adhesive transfer device has a supply reel (20) around which a transfer tape (1) having a backing material (2) provided with an adhesive (3) on one surface thereof is wound, a take-up reel (30) for taking up the transfer tape, and a transfer head (40) for transferring the adhesive onto the transfer target surface. The transfer head is pivotally supported at one end thereof and includes a first transfer section (45a) formed at a free end portion thereof and having a circular arc-shaped contact surface for mutual contact with the transfer target surface, a second transfer section (45b) having a flat transfer surface (45c) between the first transfer section and a pivot portion of the transfer head, and a spring member (46) for urging the free end portion of the transfer head toward the transfer target surface.

Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

Abstract: An adhesive transfer device can reliably transfer by simple operation an adhesive onto a transfer target surface by either of spot-like transfer and linear transfer that are alternately selected. The adhesive transfer device has a supply reel (20) around which a transfer tape (1) having a backing material (2) provided with an adhesive (3) on one surface thereof is wound, a take-up reel (30) for taking up the transfer tape, and a transfer head (40) for transferring the adhesive onto the transfer target surface. The transfer head is pivotally supported at one end thereof and includes a first transfer section (45a) formed at a free end portion thereof and having a circular arc-shaped contact surface for mutual contact with the transfer target surface, a second transfer section (45b) having a flat transfer surface (45c) between the first transfer section and a pivot portion of the transfer head, and a spring member (46) for urging the free end portion of the transfer head toward the transfer target surface.

Abstract: In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.

Abstract: In amorphous materials including at least one iron-transition metal of Fe, Co, and Ni, and at least one metalloid of B, C, Si, and P, excellent magnetic characteristics can be provided subject to the condition that 0.5 to 10 atomic % of the above-described iron-transition metals are substituted by Mn. In addition, when the amorphous material partially substituted with Mn as described above is further comprised of at least one element selected from Groups IIIa, IVa, Va, and VIa in the periodic table, the crystallization temperature is considerably raised.

Abstract: A method of heat treatments of amorphous alloy ribbons comprises the sequential steps of; grinding amorphous alloy ribbon continuously fed at a predetermined speed (V) selectively varied in the range of 1 cm/sec.ltoreq.V.ltoreq.50 cm/sec, to uniformly finish the ribbon, and successively, heat-treating the ribbon with its surface contacting a stationary or rotating heating body having a surface temperature (T) defined in the range of (T.sub.cry -200.degree. C.).ltoreq.V.ltoreq.(T.sub.cry +50.degree. C.), where T.sub.cry is a crystallization point temperature of the alloy, to uniformly enhance the magnetic properties of the ribbon, and to remove the specific curlings inherently caused by so-called splat cooling manufacturing method, without causing any developments of brittleness of the ribbon mentioned above.

Abstract: This invention provides a humidity sensor having a negative coefficient of resistivity for relative humidity, which comprises 99.99 to 10 mole percent of iron oxide (Fe.sub.2 O.sub.3) and 0.01 to 90 mole percent of at least one member selected from alkali metal oxides, which are lithium oxide (Li.sub.2 O), sodium oxide (Na.sub.2 O), potassium oxide (K.sub.2 O) and cesium oxide (Cs.sub.2 O). The amount of the alkali metal oxide in the sensor is preferably 0.01 to 25 mole percent. This sensor is advantageous because it can accurately detect the changes in humidity and it has a long, stable life.