Abstract: A semiconductor memory having NMOS write transistors (16, 14) formed in series between a node (N1) of a memory cell (MC) and a ground level, the gate of the transistor (16) being connected to a write word line (4), the gate of the transistor (14) being connected to a first column write line (12), and NMOS write transistors (17, 15) are formed in series between a node (N2) of the memory cell (MC) and the ground level, the gate of the transistor (17) being connected to the write word line (4), the gate of the transistor (15) being connected to a second column write line (13), to thereby achieve a normal write operation when the power supply voltage is low, with power consumption reduced.

Abstract: A semiconductor integrated circuit device comprising: at least two NPN transistors whose bases and emitters are connected to the ground and whose collectors are connected to an input terminal; one of said NPN transistors having a lower breakdown starting voltage and a higher breakdown maintaining voltage than those of the other of said NPN transistors; and an input portion which has a breakdown maintaining voltage at a high surge voltage breakdown which occurs caused by an application of a high surge voltage input to said input terminal which is lower than that at a low input voltage breakdown which occurs caused by an application of a low surge voltage or an input voltage which rises up gradually.